Glass transition and crystallization kinetics of Inx(Se0.75Te0.25)100−x chalcogenide glasses

Non-isothermal crystallization in Ga–Se–Ag chalcogenide glass by differential scanning calorimetry

“…A is the area of the crystallization peak and M is the mass of the sample. The value of DH c for Ga 15 Se 75 Ag 10 glasses at different heating rates are shown in Table 1. X-ray diffraction was employed for studying the structure of the as-prepared and crystallized Ga 15 Se 75 Ag 10 material.…”

“…In addition, Se-based glasses exhibit an interesting property of phase change between crystalline (high conductive) and amorphous (low conductive), which makes them suitable for phasechange rewritable optical disk [12]. In view of their potential use for the above mentioned purposes, several researchers [13][14][15][16][17][18][19][20][21][22][23][24][25] have studied the crystallization mechanism of chalcogenide glasses in an attempt to determine their suitable field of applications. The work on crystallization kinetics of Se-Te-Ga glassy system by Shakra et al [25]; the crystallization, glass transition kinetics and thermal stability of Se-Ga-In glass by Imran [26]; the crystallization kinetics in Cu-ZrAl-Y glass by DSC by Qiao and Pelletier [27]; the glass crystal transformation in Se-Te-Ag by Naqvi et al [28] and the crystallization kinetics and structural relaxation behavior ion phase separated Ag-Ge-Se glassy alloys by Kumar et al [29] are also worth mentioning.…”

Non-isothermal crystallization kinetic study on Ga15Se85−xAgx chalcogenide glasses by using differential scanning calorimetry

“…Amorphous semiconductors especially chalcogenide glasses have been investigated largely due to its important technological applications, such as switching, electrophotography, X-ray imaging, photonics, thermal imagining, ultra-high-density phasechange storage and memory, integrated fiber optics, infrared photo-detectors, photo-voltaic, biosensors [1][2][3][4][5]. The considerable interest of researchers in these glasses is due to the possibility of their various applications in different fields of electronics that based on the fact that they combine the characteristic features of the disordered systems and some properties of the crystalline semiconducting materials.…”

Evaluation of the transformation kinetics of Ga7.5Se92.5 chalcogenide glass using the theoretical method developed and isoconversional analyses

“…The value of the kinetic exponent, m P , for each heating rate could be obtained using the following parameters: the maximum transformation rate, [d˛/dt] P , the maximum transformed fraction,˛P, the effective activation energy of crystallization, E eff. , and the temperature corresponding to the maximum transformed fraction, T P , according to the following expression [60]: Fig. 4 shows the dependence of kinetic exponent, m P , on the heating rate,ˇ, as the value of m P decreases from 2.1 to 0.96 with increasingˇwith an average value of 1.53 ± 0.40.…”