Glass formation in ionic systems

Poulain, Marcel

doi:10.1038/293279a0

Cited by 72 publications

(26 citation statements)

References 15 publications

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“…25 are easily thermally activated which can move from one site to another within a glass. The glass structures lie between a melt state and a glassy state [48][49]. Several local packing arrangements are available in glasses which 30 enable the tuning of their properties through composition and processing.…”

Section: Brief History Of Glassmentioning

confidence: 99%

A review of the structures of oxide glasses by Raman spectroscopy

2015

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Section: Brief History Of Glassmentioning

confidence: 99%

A review of the structures of oxide glasses by Raman spectroscopy

2015

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“…In the melt, RE ions are surrounded by more than six oxygen ions because of the large ionic radius. 56) Because RE ions have high field strength 57) and highly ionic bonding nature, 58) similar to alkali ions and alkali-earth ions, they tend to be coordinated by non-bridging oxygen (NBO) ions, and the rest oxygen ions are bridging oxygen (BO) ions. By a disordered arrangement of BO and NBO with different negative valence charges, an asymmetric crystal field is formed around a RE ion.…”

Section: Local Structure Around Rare-earth Ionsmentioning

confidence: 99%

Doping effects in amorphous oxides

Funabiki

Kamiya

Hosono

2012

J. Ceram. Soc. Japan

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Impurity doping of crystalline Si is one of the most striking techniques in semiconductor technology. A rigid and perfect crystalline lattice is prerequisite for effective doping. However, it has been reported to date that introducing a small amount of impurities drastically improves also the properties of amorphous materials. This paper reviews three pronounced doping effects on optical and electrical properties of amorphous oxides; i.e., (i) F-doping of silica glass to improve the vacuum-ultraviolet optical transmission and radiation toughness, (ii) codoping effects on solubility enhancement of rare earth ions in silica glass melt, and (iii) electron-carrier generation in transparent amorphous oxide semiconductors. It is emphasized that effectiveness of electron doping is determined by the magnitude of electron affinity and stabilization energy of a dopant. Importance of the local structure formed around a dopant ion and the location of conduction band minimum measured from the vacuum level is addressed to understand the doping effects in amorphous oxides.

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“…Barium may replace anions in the packing as its ionic radius is very close to that of O and F. Niobium is located in the octahedral sites of the packing. This model has already been expressed elsewhere [10]. According to this approach, there are two conditions enhancing glass formation:…”

Section: Discussionmentioning

confidence: 99%