Glancing‐incidence x‐ray analysis of thin‐layered materials: A review

Abstract

Glancing-incidence x-rays provide a wealth of possibilities for the analysis of thin layers and multilayers. This paper discusses reflectometry under both specular and non-specular conditions, and also the combination with angle-dependent x-ray fluorescence. From these measurements information can be obtained on layer thickness, interface quality and compositional depth profile. First the historical development of glancing-incidence x-ray analysis is sketched. Then the physical principles of the interaction of glancing-incidence x-rays with samples which may contain rough interfaces are discussed. The equipment, which allows for both x-ray fluorescence and reflectivity measurements, is also described. The possibilities are illustrated with a number of examples from the literature.

Synchrotron radiation-induced total reflection X-ray fluorescence analysis

“…The resulting values are plotted versus angle to give the intensity profiles. From these profiles, the respective sample parameters (particle size, layer thickness) can be evaluated by an iterative fitting procedure on the basis of modeling calculations using the modulated intensity distribution above the reflector as an extremely fine dynamic ruler [11,21,[39][40][41].…”

Determination of the Copper Layer Thickness in Spin Valves by Grazing Incidence X-Ray Fluorescence

“…While total external reflection is now extensively used for chemical analysis in the very near surface region, there have been relatively few reports of the application of the depth 0018-9464/98$10.00 Q 1998 IEEE sensitivity inherent in measurements made as a function of incidence angle [7]. In the present experiments, the fluorescence yield was measured simultaneously with the xray scattering as the incident beam angle was tuned through the critical angle for total external reflection.…”

Control of SnO2 films by epitaxy and helium implantation

“…With this technique the crystal structure, orientation as well as in-plane and out-of-plane lattice parameters, strain/relaxation, thickness and defect concentration of epitaxial thin films can be determined [12]. Constructive interferences give the diffraction peaks according to Bragg's law, , where, d hkl is the interplanar distance of the lattice planes (hkl), is the incident angle and is the diffracted X-ray wavelength.…”