Gigahertz Operation of a-IGZO Schottky Diodes

Chasin, Adrian; Nag, Manoj; Bhoolokam, Ajay; Myny, Kris; Steudel, Soeren; Schols, Sarah; Genoe, Jan; Gielen, Georges; Heremans, Paul

doi:10.1109/ted.2013.2275250

Cited by 67 publications

(60 citation statements)

References 12 publications

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“…Metal-oxide semiconductors, on the other hand, have already been incorporated into flexible electronics in both academia and industry 7,8,21,22 . To date, most research on metaloxide semiconductors has focused on thin-film transistors (TFTs) 7,8,[21][22][23] , and little has been reported on diodes [24][25][26][27][28][29][30] 27), but these were all made on glass substrate using high-temperature annealing processes and hence not applicable to flexible substrates. To the best of our knowledge, the highest frequency obtained on plastic substrates was 27 MHz by IGZOCu 2 O diodes 10 .…”

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confidence: 99%

Flexible indium–gallium–zinc–oxide Schottky diode operating beyond 2.45 GHz

et al. 2015

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Mechanically flexible mobile phones have been long anticipated due to the rapid development of thin-film electronics in the last couple of decades. However, to date, no such phone has been developed, largely due to a lack of flexible electronic components that are fast enough for the required wireless communications, in particular the speed-demanding front-end rectifiers. Here Schottky diodes based on amorphous indium-gallium-zinc-oxide (IGZO) are fabricated on flexible plastic substrates. Using suitable radio-frequency mesa structures, a range of IGZO thicknesses and diode sizes have been studied. The results have revealed an unexpected dependence of the diode speed on the IGZO thickness. The findings enable the best optimized flexible diodes to reach 6.3 GHz at zero bias, which is beyond the critical benchmark speed of 2.45 GHz to satisfy the principal frequency bands of smart phones such as those for cellular communication, Bluetooth, Wi-Fi and global satellite positioning.

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confidence: 99%

Flexible indium–gallium–zinc–oxide Schottky diode operating beyond 2.45 GHz

et al. 2015

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“…The limited studies on IGZO Schottky diodes have been focused on achieving large barrier heights,  B , 9,10 high rectification ratios, I on/off , 9,11,12 low ideality factors, n, 9,10,13 and high-frequency operation. 11,12,14 So far, thermal annealing at ~200 ˚C has been used in most studies. The best annealed diodes fabricated by using the sputtering technique showed an I on/off of ~10 8 ,  B of ~0.9 eV, and n of ~1.2.…”

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confidence: 99%

“…The best annealed diodes fabricated by using the sputtering technique showed an I on/off of ~10 8 ,  B of ~0.9 eV, and n of ~1.2. 11,12 In the case of annealed diode based on an IGZO layer grown by pulsed laser deposition technique, the best ideality factor reached 1.04. 9 However, thermal annealing at high temperatures is not preferred when fabricating low-cost, flexible diodes on substrates such as polyethylene terephthalate (PET).…”

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confidence: 99%

“…So far, thermal annealing of IGZO Schottky diodes was generally performed on the whole device after the final device fabrication step, 9,12 and in some cases additional annealing was carried out on the IGZO layer itself. 10,11,13 Here, we first annealed the SiO 2 /Si substrate before depositing any diode layer, and observed an improvement in diode performance. In contrast, thermal annealing on the Pd anode produced an adverse effect on the diode performance.…”

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confidence: 99%

“…A 47-nmthick Pd layer was deposited as anode electrode, and then treated with oxygen plasma (PDC-32G, 10 min) for oxidation and to ensure good oxygen stoichiometry of the contact interface prior to IGZO deposition. 11,16 To study the effect of thermal treatment of SiO 2 /Si substrate and Pd anode on the device performance, a hotplate (Model p-10, POLISH Co.) was used to anneal the samples in ambient air. A 100-nm-thick IGZO layer was deposited by radio-frequency (RF) magnetron sputtering at room temperature with an InGaZnO 4 ceramic target (In:Ga:Zn = 1:1:1 in atomic ratio, Lesker Co.).…”

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Effects of substrate and anode metal annealing on InGaZnO Schottky diodes

Yan

et al. 2017

Applied Physics Letters

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By studying different annealing effects of substrate and anode metal, high-performance Schottky diodes based on InGaZnO (IGZO) film have been realized. It is observed that a suitable thermal annealing of the SiO 2 /Si substrate significantly improves the diode performance. In contrary, annealing of the Pd anode increases surface roughness, leading to degradation in the diode performance. As such, by only annealing the substrate but not the anode, we are able to achieve an extremely high rectification ratio of 7.2 × 10 7 , a large barrier height of 0.88 eV, and a near unity ideality factor of 1.09. The diodes exhibit the highest performance amongst IGZO-based Schottky diodes reported to date where IGZO layer is not annealed.The capacitance vs. voltage measurements indicate that the surface roughness is correlated with the trap state density at the Schottky interface.

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Metal Oxide Semiconductors for Diodes

2023

Metal Oxide Semiconductors

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Gigahertz Operation of a-IGZO Schottky Diodes

Cited by 67 publications

References 12 publications

Flexible indium–gallium–zinc–oxide Schottky diode operating beyond 2.45 GHz

Flexible indium–gallium–zinc–oxide Schottky diode operating beyond 2.45 GHz

Effects of substrate and anode metal annealing on InGaZnO Schottky diodes

Metal Oxide Semiconductors for Diodes

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