Giant self-biased converse magnetoelectric effect in multiferroic heterostructure with single-phase magnetostrictive materials

Abstract

Giant self-biased converse magnetoelectric (CME) effects with obvious hysteretic behaviors are systematically investigated in two-phase SmFe2/PZT [Pb(Zr1−x, Tix)O3] multiferroic laminates at room temperature. Taking advantage of the huge anisotropic field of SmFe2 plate, large remnant CME coupling is provoked by this field instead of permanent magnets to bias the laminate. Consequently, bitable magnetization status switching is realized through a smaller ac voltage far below the electric coercive field in the absence of magnetic bias field. Experiments demonstrate that a large remnant CME coefficient (αCME) of 0.007 mG/V is achieved, exhibiting ∼50 times higher CME coefficient than the previous laminate composite multi-phase magnetostrictive plates. These results provide promising applications for realization of high-density magnetoelectric random access memories (MERAMs) devices with lower energy consumption.

Enhanced self-biased direct and converse magnetoelectric effect in Pb(In1/2Nb1/2)O3–PbTiO3/NiFe2O4 bi-layer laminate composite

“…In the absence of H dc a maximum a CME of 5 (mG cm)/V is achieved at B 1 mode. This is three orders of magnitude higher than the previously reported self-biased CME coefficient in laminate composite [19]. The R 1 mode and B 2 mode shows a self-biased a CME value of 1.8 and 1.2 (mG cm)/V respectively.…”

“…The hysteresis and remanent magnetization in the ferromagnetic layer of the ME composite give rise to ME coefficient in the absence of external bias field in these structures. But there are only very few studies on self-biased CME effect and the reported values are low [14,19].…”

Electrical manipulation of magnetic anisotropy in a Fe$_{81}$Ga$_{19}$/PMN-PZT magnetoelectric multiferroic composite

“…These values correspond to a remanent magnetoelectric coupling at zero bias field µ 0 H, which is related to the hysteretic magnetic behavior and the strong remanent magnetization [49,71]. This is truly encouraging for the dynamic CME self-biased potential of FeGa/PMN-PZT in applications, which is revealed in measurements that assess the magnetization change under an alternating AC electric field superimposed to a DC magnetic bias field µ 0 H (yielding a non-zero remanent CME(µ 0 H) at µ 0 H = 0) [31,[67][68][69].…”

“…FeGa has been the choice of magnetostrictive material for many studies, suggesting versatile proposals for the development of multifunctional devices exploiting both DME [56][57][58] and CME effects [9,19,24,[59][60][61][62][63][64][65][66]. Among these studies some have reported the dynamic self-biased effect, also called remanent CME, which is a desirable property recently seeked to control the magnetization using an electric field in ME devices without the need for the assistance of an external biasing magnetic field [31,49,[67][68][69][70][71]. Self-biased CME is indeed important for lower-energy consumption and more compact ME devices.…”

Energy Efficient All-Electric-Field-Controlled Multiferroic Magnetic Domain-Wall Logic

“…The device concepts that have recently emerged using electric field control of magnetization switching − provide an alternative route to achieve fast and high-density information storage with very low energy consumption . A multiferroic heterostructure composed of FM and ferroelectric (FE) materials is well-suited for high-speed, low-power, and ultradense device structures. − So far, there have been three main methods available for the electric field control of magnetism in FM/FE multiferroic heterostructures, including (i) strain-mediated magnetoelastic coupling with the piezostrain of the FE transferred to the FM layer, , (ii) exchange bias-mediated interaction, , and (iii) manipulation of charge carrier density. , Among them, the electric field control of magnetism through strain-mediated coupling in FM/FE multiferroic heterostructures has become a hot topic due to the availability of a variety of room-temperature FM and FE materials and the remarkable magnetoelectric effects . The strain is induced by applying an electric field to the FE layer via the piezoelectric effect, and the induced strain is then transferred to the FM layer, altering the magnetization via magnetostriction.…”