“…Recently, analytical models and experimental approaches for multiferroic/magnetoelectric materials/structures have been studied in the context of memory devices [ 10 , 11 , 12 , 13 , 14 , 15 , 16 , 17 , 18 , 19 ]. These approaches use the converse magnetoelectric effect found in multiferroic and magnetoelectric materials/structures [ 20 , 21 , 22 , 23 , 24 , 25 , 26 , 27 ]. When an electric field is applied to these materials/structures, mechanical strain is generated due to the piezoelectric effect.…”