Giant Seebeck effect in Ge-doped SnSe

Gharsallah, M.; Serrano‐Sánchez, Federico; Nemes, N. M.; Mompeán, F. J.; Martı́nez, J. L.; Fernández‐Díaz, M. T.; Elhalouani, F.; Alonso, José Antonio

doi:10.1038/srep26774

Cited by 73 publications

(53 citation statements)

References 29 publications

(48 reference statements)

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“…More recently, the giant Seebeck coefficient seen in the silicon nanoparticles is in the range of our ML thin films [36]. The most recent giant Seebeck system is the SnSe system with~1000 µV/K [37]. These studies provide additional evidence that Hicks and Dresselhaus's [6] theoretical work is of current significance.…”

Section: Discussionmentioning

confidence: 67%

Thermoelectric Properties and Morphology of Si/SiC Thin-Film Multilayers Grown by Ion Beam Sputtering

Cramer

Farnell

et al. 2018

Coatings

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Multilayers (MLs) of 31 bi-layers and a 10-nm layer thickness each of Si/SiC were deposited on silicon, quartz and mullite substrates using a high-speed, ion-beam sputter deposition process. The samples deposited on the silicon substrates were used for imaging purposes and structural verification as they did not allow for accurate electrical measurement of the material. The Seebeck coefficient and the electrical resistivity on the mullite and the quartz substrates were reported as a function of temperature and used to compare the film performance. The thermal conductivity measurement was performed for ML samples grown on Si, and an average value of the thermal conductivity was used to find the figure of merit, zT, for all samples tested. X-ray diffraction (XRD) spectra showed an amorphous nature of the thin films. Scanning electron microscopy (SEM) and transmission electron microscopy (TEM) were used to study the film morphology and verify the nature of the crystallinity. The mobility of the multilayer films was measured to be only 0.039 to 1.0 cm 2 /Vs at room temperature. The samples were tested three times in the temperature range of 300 K to 900 K to document the changes in the films with temperature cycling. The highest Seebeck coefficient is measured for a Si/SiC multilayer system on quartz and mullite substrates and were observed at 870 K to be roughly −2600 µV/K due to a strain-induced redistribution of the states' effect. The highest figure of merit, zT, calculated for the multilayers in this study was 0.08 at 870 K.

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Section: Discussionmentioning

confidence: 67%

Thermoelectric Properties and Morphology of Si/SiC Thin-Film Multilayers Grown by Ion Beam Sputtering

Cramer

Farnell

et al. 2018

Coatings

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“…This Ge-doped nanostructured SnSe shows a semiconductor behavior with resistivity values higher than that of the pure SnSe compound, because Ge does not donate carriers [289]. However, S has been improved significantly and reaches to a value of 1000 μV K -1 with a low Ge-doping level [289]. Due to a high density of point defects caused by Ge-doping, the obtained κ was extremely low to be ~0.1 W [232].…”

Section: Iv-a and Vi-a Groupmentioning

confidence: 93%

“…For example, Ge-doped nanostructured SnSe has been prepared by an arc-melting method [289]. This Ge-doped nanostructured SnSe shows a semiconductor behavior with resistivity values higher than that of the pure SnSe compound, because Ge does not donate carriers [289]. However, S has been improved significantly and reaches to a value of 1000 μV K -1 with a low Ge-doping level [289].…”

Section: Iv-a and Vi-a Groupmentioning

confidence: 99%

High-performance SnSe thermoelectric materials: Progress and future challenge

Chen

Zhao

Zou

2018

Progress in Materials Science

465

410

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Thermoelectric materials offer an alternative opportunity to tackle the energy crisis and environmental problems by enabling the direct solid-state energy conversion. As a promising candidate with full potentials for the next generation thermoelectrics, tin selenide (SnSe) and its associated thermoelectric materials have been attracted extensive attentions due to their ultralow thermal conductivity and high electrical transport performance (power factor). To provide a thorough overview of recent advances in SnSe-based thermoelectric materials that have been revealed as promising thermoelectric materials since 2014, here, we first focus on the inherent relationship between the structural characteristics and the supreme thermoelectric performance of SnSe, including the thermodynamics, crystal structures, and electronic structures. The effects of phonon scattering, pressure or strain, and oxidation behavior on the thermoelectric performance of SnSe are discussed in detail. Besides, we summarize the current theoretical calculations to predict and understand the thermoelectric performance of SnSe, and provide a comprehensive summary on the current synthesis, characterization, and thermoelectric performance of both SnSe crystals and polycrystals, and their associated materials. In the end, we point out the controversies, challenges and strategies toward future enhancements of the SnSe thermoelectric materials.

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“…The details of the sample preparation, structural and transport property characterizations were given elsewhere 28,29,41 The measurements were carried out at 423, 573 and 723 K during the warming run. In all cases, the crystal structures were refined by the Rietveld method using the FULLPROF refinement program.…”

Section: Methodsmentioning

confidence: 99%

Enhanced figure of merit in nanostructured (Bi,Sb)2Te3 with optimized composition, prepared by a straightforward arc-melting procedure

Serrano‐Sánchez

Gharsallah

Nemes

et al. 2017

Sci Rep

Self Cite

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Sb-doped Bi2Te3 is known since the 1950s as the best thermoelectric material for near-room temperature operation. Improvements in material performance are expected from nanostructuring procedures. We present a straightforward and fast method to synthesize already nanostructured pellets that show an enhanced ZT due to a remarkably low thermal conductivity and unusually high Seebeck coefficient for a nominal composition optimized for arc-melting: Bi0.35Sb1.65Te3. We provide a detailed structural analysis of the Bi2−xSbxTe3 series (0 ≤ x ≤ 2) based on neutron powder diffraction as a function of composition and temperature that reveals the important role played by atomic vibrations. Arc-melting produces layered platelets with less than 50 nm-thick sheets. The low thermal conductivity is attributed to the phonon scattering at the grain boundaries of the nanosheets. This is a fast and cost-effective production method of highly efficient thermoelectric materials.

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Giant Seebeck effect in Ge-doped SnSe

Cited by 73 publications

References 29 publications

Thermoelectric Properties and Morphology of Si/SiC Thin-Film Multilayers Grown by Ion Beam Sputtering

Thermoelectric Properties and Morphology of Si/SiC Thin-Film Multilayers Grown by Ion Beam Sputtering

High-performance SnSe thermoelectric materials: Progress and future challenge

Enhanced figure of merit in nanostructured (Bi,Sb)2Te3 with optimized composition, prepared by a straightforward arc-melting procedure

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