Giant Modification of the Magnetocrystalline Anisotropy in Transition-Metal Monolayers by an External Electric Field

Nakamura, Kohji; Shimabukuro, Riki; Fujiwara, Y.; Akiyama, Toru; T, Ito; Freeman, Arthur J

doi:10.1103/physrevlett.102.187201

Cited by 351 publications

(232 citation statements)

References 20 publications

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“…This affects the surface MCA owing to the different contribution of these orbitals to the MCA energy [112]. Recent first-principles calculations have demonstrated the importance of these effects [128,129]. Recently, a strong effect of applied electric field on the interface MCA was demonstrated for the Fe/MgO (001) interfaces [130].…”

Section: (B) Surface Magnetocrystalline Anisotropymentioning

confidence: 99%

Multi-ferroic and magnetoelectric materials and interfaces

Velev

Jaswal

Tsymbal

2011

Phil. Trans. R. Soc. A.

202

144

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The existence of multiple ferroic orders in the same material and the coupling between them have been known for decades. However, these phenomena have mostly remained the theoretical domain owing to the fact that in single-phase materials such couplings are rare and weak. This situation has changed dramatically recently for at least two reasons: first, advances in materials fabrication have made it possible to manufacture these materials in structures of lower dimensionality, such as thin films or wires, or in compound structures such as laminates and epitaxial-layered heterostructures. In these designed materials, new degrees of freedom are accessible in which the coupling between ferroic orders can be greatly enhanced. Second, the miniaturization trend in conventional electronics is approaching the limits beyond which the reduction of the electronic element is becoming more and more difficult. One way to continue the current trends in computer power and storage increase, without further size reduction, is to use multi-functional materials that would enable new device capabilities. Here, we review the field of multi-ferroic (MF) and magnetoelectric (ME) materials, putting the emphasis on electronic effects at ME interfaces and MF tunnel junctions.

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Section: (B) Surface Magnetocrystalline Anisotropymentioning

confidence: 99%

Multi-ferroic and magnetoelectric materials and interfaces

Velev

Jaswal

Tsymbal

2011

Phil. Trans. R. Soc. A.

202

144

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“…As the majority of these materials loses their ferromagnetic properties at room temperature the recent discovery of an important ME effect at room temperature in conventional ferromagnetic metals 3-8 has attracted much attention. Despite the limited penetration depth of an E-field in metals, the charge induced at the metal/dielectric interface on the topmost atomic layers is sufficient to modify the surface magnetic anisotropy energy (MAE) by a non negligible amount in ultrathin ferromagnetic layers as suggested by electronic structure calculations [9][10][11] . This has a particular impact in systems where the different anisotropy contributions almost cancel each other out, resulting in a large relative variation of the total effective MAE when the surface contribution is modified with the voltage [12][13][14][15][16][17][18][19][20][21][22][23][24][25][26] .…”

mentioning

confidence: 99%

Electric-field control of domain wall nucleation and pinning in a metallic ferromagnet

Bernand-Mantel

Diez

Ranno

et al. 2013

Applied Physics Letters

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The electric (E) field control of magnetic properties opens the prospects of an alternative to magnetic field or electric current activation to control magnetization. Multilayers with perpendicular magnetic anisotropy (PMA) have proven to be particularly sensitive to the influence of an E-field due to the interfacial origin of their anisotropy. In these systems, E-field effects have been recently applied to assist magnetization switching and control domain wall (DW) velocity. Here we report on two new applications of the E-field in a similar material :controlling DW nucleation and stopping DW propagation at the edge of the electrode.The possibility of controlling magnetic properties with an E-field via magneto-electric (ME) effects was initially envisaged in multiferroïcs 1 or magnetic semiconductors 2 . As the majority of these materials loses their ferromagnetic properties at room temperature the recent discovery of

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“…This effect can be induced by purely electronic effects and by chemical or mechanical effects. The physical mechanisms of the purely electronic VCMA effect have been interpreted as the modification of the electronic structure at the interface through charge accumulation/depletion, [21][22][23] an electricfield-induced magnetic dipole 24 or the Rashba effect. 25 Chemical effects, such as a voltage-induced redox reaction, 26 or other electromigration 27 or charge trapping 28 effects can show a substantial VCMA coefficient of the order of a few thousands of fJ Vm − 1 , which is defined as the induced surface anisotropy energy change per unit electric field.…”

Section: Introductionmentioning

confidence: 99%

Highly efficient voltage control of spin and enhanced interfacial perpendicular magnetic anisotropy in iridium-doped Fe/MgO magnetic tunnel junctions

et al. 2017

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Voltage control of spin enables both a zero standby power and ultralow active power consumption in spintronic devices, such as magnetoresistive random-access memory devices. A practical approach to achieve voltage control is the electrical modulation of the spin-orbit interaction at the interface between 3d-transition-ferromagnetic-metal and dielectric layers in a magnetic tunnel junction (MTJ). However, we need to initiate a new guideline for materials design to improve both the voltage-controlled magnetic anisotropy (VCMA) and perpendicular magnetic anisotropy (PMA). Here we report that atomic-scale doping of iridium in an ultrathin Fe layer is highly effective to improving these properties in Fe/MgO-based MTJs. A large interfacial PMA energy, K i,0 , of up to 3.7 mJ m − 2 was obtained, which was 1.8 times greater than that of the pure Fe/MgO interface. Moreover, iridium doping yielded a huge VCMA coefficient (up to 320 fJ Vm − 1 ) as well as high-speed response. First-principles calculations revealed that Ir atoms dispersed within the Fe layer play a considerable role in enhancing K i,0 and the VCMA coefficient. These results demonstrate the efficacy of heavy-metal doping in ferromagnetic layers as an advanced approach to develop high-density voltage-driven spintronic devices. NPG Asia Materials (2017) 9, e451; doi:10.1038/am.2017.204; published online 5 December 2017 INTRODUCTIONSpintronic devices, such as a magnetoresistive random-access memory device using a MgO-based magnetic tunnel junction (MTJ), 1,2 are expected to reduce the standby power of future computing systems by utilizing the non-volatile feature of magnetism. However, one significant challenge emerges from reducing the energy for information writing: magnetization switching. This issue is caused by electriccurrent-based operations of spintronic devices using electric-currentinduced magnetic fields, spin-transfer torque (STT) and spin-orbit torque based on the spin Hall effect rather than the electric-field-based operations presently used for semiconductor devices. For example, recent developments of STT-magnetoresistive random access memory have achieved~100 fJ per bit writing energies, 3 which corresponds to 10 7 k B T, where k B is the Boltzmann constant and T is the temperature (assumed to be 300 K here). In contrast, the energy required for maintaining magnetic information, that is, thermal stability, is between 60 k B T and 100 k B T. This large energy gap between data writing and retention, on the order of 10 5 , mainly originates

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Giant Modification of the Magnetocrystalline Anisotropy in Transition-Metal Monolayers by an External Electric Field

Cited by 351 publications

References 20 publications

Multi-ferroic and magnetoelectric materials and interfaces

Multi-ferroic and magnetoelectric materials and interfaces

Electric-field control of domain wall nucleation and pinning in a metallic ferromagnet

Highly efficient voltage control of spin and enhanced interfacial perpendicular magnetic anisotropy in iridium-doped Fe/MgO magnetic tunnel junctions

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