Giant magnetoresistance and perfect spin filter in silicene, germanene, and stanene

Rachel, Stephan; Ezawa, Motohiko

doi:10.1103/physrevb.89.195303

Cited by 241 publications

(135 citation statements)

References 39 publications

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“…The larger topological band gap (~34meV) induced by strong spin-orbit interaction in Ge and the strong quantum spin-Hall phase is another intriguing factor in science viewpoints 14 . Combined with the good compatibility with modern semiconductor technology, germanene has great application prospects in the next-generation nanodevices 15,16 .…”

Section: Introductionmentioning

confidence: 99%

A new approach for fabricating germanene with Dirac electrons preserved: a first principles study

Cao

Guo

2016

J. Mater. Chem. C

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How to obtain germanene with Dirac electrons preserved is still an open challenge. Here we report a sandwich-dehydrogenation approach, i.e., to fabricate germanene through dehydrogenating germanane in a sandwiched structure. The dehydrogenation can spontaneously occur for the sandwiched structure, which overcomes the problem of amorphization in the heating dehydrogenation approach.The obtained germanene preserve the Dirac electronic properties very well. Moreover, the Fermi velocity of germanene can be efficiently manipulated through controlling the interlayer spacing between germanane and the sandwiching surfaces. Our results indicate a guideline for fabrication of prefect two-dimensional materials.

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Section: Introductionmentioning

confidence: 99%

A new approach for fabricating germanene with Dirac electrons preserved: a first principles study

Cao

Guo

2016

J. Mater. Chem. C

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“…42,101 Then, S z is no longer a good quantum number, and thus the protection that remained in the off-plane magnetic case no longer holds. Now, the in-plane magnetism opens up a spin mixing channel, driving the system into an edge insulator, as shown in Fig.7d.…”

Section: A Kane-mele-hubbard Modelmentioning

confidence: 99%

Edge states in graphene-like systems

2015

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The edges of graphene and graphene like systems can host localized states with evanescent wave function with properties radically different from those of the Dirac electrons in bulk. This happens in a variety of situations, that are reviewed here. First, zigzag edges host a set of localized non dispersive state at the Dirac energy. At half filling, it is expected that these states are prone to ferromagnetic instability, causing a very interesting type of edge ferromagnetism. Second, graphene under the influence of external perturbations can host a variety of topological insulating phases, including the conventional Quantum Hall effect, the Quantum Anomalous Hall (QAH) and the Quantum Spin Hall phase, in all of which phases conduction can only take place through topologically protected edge states. Here we provide an unified vision of the properties of all these edge states, examined under the light of the same one orbital tight-binding model. We consider the combined action of interactions, spin orbit coupling and magnetic field, which produces a wealth of different physical phenomena. We briefly address what has been actually observed experimentally.

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“…This two-dimensional (2D) material has been grown experimentally by successful deposition of silicene sheet on silver substrate [9][10][11] . Also the interest in silicene soared due to the possibility of its various future applications ranging from spintronics [13][14][15][16][17] , valleytronics [18][19][20][21][22] to silicon based transistor 23 at room temperature. Very recently, it has been reported that low energy excitations in silicene follows relativistic Dirac equation akin to graphene 7,24 .…”

Section: Introductionmentioning

confidence: 99%

Thermal conductance by Dirac fermions in a normal-insulator-superconductor junction of silicene

2016

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We theoretically study the properties of thermal conductance in a normal-insulatorsuperconductor junction of silicene for both thin and thick barrier limit. We show that while thermal conductance displays the conventional exponential dependence on temperature, it manifests a nontrivial oscillatory dependence on the strength of the barrier region. The tunability of the thermal conductance by an external electric field is also investigated. Moreover, we explore the effect of doping concentration on thermal conductance. In the thin barrier limit, the period of oscillations of the thermal conductance as a function of the barrier strength comes out be π/2 when doping concentration in the normal silicene region is small. On the other hand, the period gradually converts to π with the enhancement of the doping concentration. Such change of periodicity of the thermal response with doping can be a possible probe to identify the crossover from specular to retro Andreev reflection in Dirac materials. In the thick barrier limit, thermal conductance exhibits oscillatory behavior as a function of barrier thickness d and barrier height V0 while the period of oscillation becomes V0 dependent. However, amplitude of the oscillations, unlike in tunneling conductance, gradually decays with the increase of barrier thickness for arbitrary height V0 in the highly doped regime. We discuss experimental relevance of our results.

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Giant magnetoresistance and perfect spin filter in silicene, germanene, and stanene

Cited by 241 publications

References 39 publications

A new approach for fabricating germanene with Dirac electrons preserved: a first principles study

A new approach for fabricating germanene with Dirac electrons preserved: a first principles study

Edge states in graphene-like systems

Thermal conductance by Dirac fermions in a normal-insulator-superconductor junction of silicene

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