We study theoretically transport through a semiconducting nanowire (NW) in the presence of Rashba spin orbit interaction, uniform magnetic field, and spatially modulated magnetic field. The system is fully gapped, and the interplay between the spin orbit interaction and the magnetic fields leads to fractionally charged fermion (FF) bound states of Jackiw-Rebbi type at each end of the nanowire. We investigate the transport and noise behavior of a N/NW/N system, where the wire is contacted by two normal leads (N), and we look for possible signatures that could help in the experimental detection of such states. We find that the differential conductance and the shot noise exhibit a sub-gap structure which fully reveals the presence of the FF state. Our predictions can be tested in standard two-terminal measurements through InSb/InAs nanowires.

The presence of geometric phases is known to affect the dynamics of the systems involved. Here, we consider a quantum degree of freedom, moving in a dissipative environment, whose dynamics is described by a Langevin equation with quantum noise. We show that geometric phases enter the stochastic noise terms. Specifically, we consider small ferromagnetic particles (nanomagnets) or quantum dots close to Stoner instability, and investigate the dynamics of the total magnetization in the presence of tunneling coupling to the metallic leads. We generalize the Ambegaokar-Eckern-Schön effective action and the corresponding semiclassical equations of motion from the U(1) case of the charge degree of freedom to the SU(2) case of the magnetization. The Langevin forces (torques) in these equations are strongly influenced by the geometric phase. As a first but nontrivial application, we predict low temperature quantum diffusion of the magnetization on the Bloch sphere, which is governed by the geometric phase. We propose a protocol for experimental observation of this phenomenon.

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We investigate charge conductance and spin and valley polarization along with the tunnelling magneto-resistance (TMR) in silicene junctions composed of normal silicene and ferromagnetic silicene. We show distinct features of the conductances for parallel and anti-parallel spin configurations and the TMR, as the ferromagnetic−normal−ferromagnetic (FNF) junction is tuned by an external electric field. We analyse the behavior of the charge conductance and valley and spin polarizations in terms of the independent conductances of the different spins at the two valleys and the band structure of ferromagnetic silicene and show how the conductances are affected by the vanishing of the propagating states at one or the other valley. In particular, unlike in graphene, the band structure at the two valleys are independently affected by the spin in the ferromagnetic regions and lead to non-zero, and in certain parameter regimes, pure valley and spin polarizations, which can be tuned by the external electric field. We also investigate the oscillatory behavior of the TMR with respect to the strength of the barrier potential (both spin-independent and spin-dependent barriers) in the normal silicene region and note that in some parameter regimes, the TMR can even go from positive to negative values, as a function of the external electric field.