Giant linear anomalous Hall effect in the perpendicular CoFeB thin films

Zhu, Tao; Chen, Peng; Zhang, Q. H.; Yu, Ronghai; Liu, Bang-Gui

doi:10.1063/1.4878538

Cited by 67 publications

(47 citation statements)

References 30 publications

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“…Среди " белых пятен" можно упомянуть отсутствие систематической информации о роли доменных стенок и фазы обрат-ной намагниченности при перемагничивании ферромаг-нитных слоев, нестабильность и сложность поведения намагниченности на рабочих частотах (более 10 GHz), неадекватность теории макроспина при описании релак-сационных процессов в вентилях и многие другие. Даже самые простые гетероструктуры, состоящие из пары ферромагнитных слоев CoFeB, популярные у исследова-телей, продолжают привлекать внимание в связи с мно-гообразием физических эффектов, а также появлением новых идей их использования в спинтронике [4][5][6][7][8].…”

Section: Introductionunclassified

Ферромагнитный резонанс в монокристаллических спиновых вентилях CoFeB/Ta/CoFeB и пленках CoFeB c перпендикулярной магнитной анизотропией

Таланцев¹,

L’vova²,

Коплак³

et al. 2017

Физика Твердого Тела

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В пленке MgO/CoFeB/MgO/Ta с одним ферромагнитным слоем (монослой) и спиновом вентиле MgO/CoFeB/Ta/CoFeB/MgO/Ta, состоящем из двух ферромагнитных слоев CoFeB с монокристаллической структурой, разделенных немагнитным слоем Ta (бислой), исследованы ориентационные зависимости ферромагнитного резонанса. Анализ ориентационных зависимостей структур с перпендикулярной магнитной анизотропией позволил извлечь константы магнитной анизотропии, а также коэффициенты демпфирования. Обсуждаются физические причины различий этих параметров в однослойных и двухслойных структурах.Работа поддержана Министерством образования и науки РФ (грант № 3.1992.2017/ПЧ в рамках конкурса научных проектов, выполняемых научными коллективами исследовательских центров и (или) научных лабораторий образовательных организаций высшего образования), а также грантом № 14.W03.31.0001.

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Section: Introductionunclassified

Ферромагнитный резонанс в монокристаллических спиновых вентилях CoFeB/Ta/CoFeB и пленках CoFeB c перпендикулярной магнитной анизотропией

Таланцев¹,

L’vova²,

Коплак³

et al. 2017

Физика Твердого Тела

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“…2(a) shows superparamagnetic behaviour, similar to observations in CoFeB thin films below the thickness threshold for PMA. 18 A large, hysteretic AHE only becomes apparent at low temperature, as shown in Fig. 2(f).…”

mentioning

confidence: 95%

Perpendicular magnetic anisotropy in Co2Fe0.4Mn0.6Si

Ludbrook

Ruck

Granville

2016

Journal of Applied Physics

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We report perpendicular magnetic anisotropy (PMA) in the half-metallic ferromagnetic Heusler alloy Co 2 Fe 0.4 Mn 0.6 Si (CFMS) in a MgO/CFMS/Pd trilayer stack. PMA is found for CFMS thicknesses between 1 and 2 nm, with a magnetic anisotropy energy density of K U = 1.5 × 10 6 erg/cm 3 for t CFMS = 1.5 nm. Both the MgO and Pd layer are necessary to induce the PMA. We measure a tunable anomalous Hall effect, where its sign and magnitude vary with both the CFMS and Pd thickness.A magnetic thin film will generally prefer to have its magnetic moment lying in the plane of the sample owing to the large demagnetizing field. New magnetic devices have made it desirable to fabricate thin magnetic layers which instead have an easy axis of magnetization directed perpendicular to the film plane, a condition known as perpendicular magnetic anisotropy (PMA). 1 In particular, spin-transfer-torque (STT) based devices require that a magnetic free layer can be easily flipped by a spin-polarized current while maintaining a high stability against thermal fluctuations. 2 Magnetic layers with PMA are well suited to optimize this trade-off for device applications.In order to realize a high efficiency STT device, a high degree of spin-polarization in the magnetic layers is also desirable. CoFeB, with approximately 65% spin polarization, has been the most widely studied material so far, because it can be grown with PMA and incorporated into device structures with very large tunneling magnetoresistance (TMR). 3 There is a strong motivation to incorporate a half-metallic ferromagnet (HMFM) with higher spin polarization in these devices, and Heusler alloys are promising in this regard. 4 In particular, Co 2 FeSi and Co 2 MnSi both have 100% spin polarization 5-7 and high Curie temperatures (c. 1000 • C). Recent studies have shown the intermediary compound Co 2 Fe x Mn (1−x) Si with x≈0.4 to be eminently promising for device applications with a low Gilbert damping parameter 8 and record 75% room temperature GMR ratio. 9 Efforts to induce PMA in the Heuslers have focused on compounds containing Fe on MgO (eg. Co 2 FeAl 10,11 ). This was guided by earlier studies of CoFeB/MgO where the PMA is thought to have its origin in the Fe-O hybridization. 3 PMA has recently been reported in Co 2 MnSi in CMS/Pd multilayer stacks on MgO, 12 and for Pd buffered Co 2 Fe x Mn 1−x Si on MgO, 13 but the details of the PMA and the contribution of the various interfaces remains unclear. Here, we demonstrate PMA in MgO/CFMS/Pd stacks, and show that both interfaces are important for this effect.Samples were grown by DC magnetron sputtering in a Kurt J Lesker CMS-18 UHV system with a base pressure of 2 × 10 −8 Torr. Multilayer stacks consisting of MgO(2)/CFMS(t CFMS )/Pd(2.5), where the number in parentheses is the nominal layer thickness in nm, were grown on 10 × 10mm Si/SiO 2 substrates at room temperature and post-growth annealed in-situ for 1 hour at 300 • C with an in-plane magnetic field of 170 Oe. MgO was RF sputtered with 100 W power in 3 mTorr Ar, giving a ...

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“…5a). 37,38 The sheet resistivity and the anomalous Hall resistance were 803 Ω and 20.9 Ω, respectively. The magnetic film had square magnetic hysteresis loop and coercivity measured by anomalous Hall effect was 0.6 mT.…”

Section: Pma-based Magnetic Logicmentioning

confidence: 99%

Magnetic logic based on diode-assisted magnetoresistance

Luo

Zhang

2017

AIP Advances

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Conventional computer suffers from the von Neumann performance bottleneck due to its hardware architecture that non-volatile memory and logic are separated. The new emerging magnetic logic coupling the extra dimension of spin, shows the potential to overcome this performance bottleneck. Here, we propose a novel category of magnetic logic based on diode-assisted magnetoresistance. By coupling Hall effect and nonlinear transport property in silicon, all four basic Boolean logic operations including AND, NAND, OR and NOR, can be programmed at room temperature with high output ratio in one silicon-based device. Further introducing anomalous Hall effect of magnetic material into magnetic logic, we achieve perpendicular magnetic anisotropy-based magnetic logic which combines the advantages of both high output ratio (>103 %) and low work magnetic field (∼1 mT). Integrated with non-volatile magnetic memory, our logic device with unique magnetoelectric properties has the advantages of current-controlled reconfiguration, zero refresh consumption, instant-on performance and would bridge the processor-memory gap. Our findings would pave the way in magnetic logic and offer a feasible platform to build a new kind of magnetic microprocessor with potential of high performance.

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Giant linear anomalous Hall effect in the perpendicular CoFeB thin films

Cited by 67 publications

References 30 publications

Ферромагнитный резонанс в монокристаллических спиновых вентилях CoFeB/Ta/CoFeB и пленках CoFeB c перпендикулярной магнитной анизотропией

Ферромагнитный резонанс в монокристаллических спиновых вентилях CoFeB/Ta/CoFeB и пленках CoFeB c перпендикулярной магнитной анизотропией

Perpendicular magnetic anisotropy in Co2Fe0.4Mn0.6Si

Magnetic logic based on diode-assisted magnetoresistance

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