Giant dielectric constant dominated by Maxwell–Wagner relaxation in Al2O3/TiO2 nanolaminates synthesized by atomic layer deposition

Li, Wei; Auciello, Orlando; Premnath, Ramesh Nath; Kabius, B.

doi:10.1063/1.3413961

Cited by 82 publications

(68 citation statements)

References 23 publications

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“…The Maxwell-Wagner polarization was widely adopted to explain the high dielectric constant (several hundreds or thousands) observed in the organic or inorganic materials. [41][42][43] The large dielectric constant resulted from Maxwell-Wagner relaxation occurring at two dielectric media or the interfaces of grains and grain boundaries. In organic charge transfer crystals, dielectric constant is very 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 6 small with frequency range from 100 Hz to 100M Hz, as shown in Fig.…”

Section: Resultsmentioning

confidence: 99%

Room Temperature Multiferroicity of Charge Transfer Crystals

Qin

Chen

et al. 2015

ACS Nano

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Room temperature multiferroics has been a frontier research field by manipulating spin-driven ferroelectricity or charge-order-driven magnetism. Charge-transfer crystals based on electron donor and acceptor assembly, exhibiting simultaneous spin ordering, are drawing significant interests for the development of all-organic magnetoelectric multiferroics. Here, we report that a remarkable anisotropic magnetization and room temperature multiferroicity can be achieved through assembly of thiophene donor and fullerene acceptor. The crystal motif directs the dimensional and compositional control of charge-transfer networks that could switch magnetization under external stimuli, thereby opening up an attractive class of all-organic nanoferronics.

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Section: Resultsmentioning

confidence: 99%

Room Temperature Multiferroicity of Charge Transfer Crystals

Qin

Chen

et al. 2015

ACS Nano

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“…20 In mixed oxides 21 (Al2O3 and TiO2) and Al2O3 / TiO2 nanolaminates, 22 tailored optical properties varying from Al2O3 to TiO2 with gradual composition change have been demonstrated. Electrical properties 23,24 can be tuned by adjusting either the TiO2 fraction 25,26 or the bilayer thickness 27,28,29,30 or with an interfacial layers. 31 The effect of alloying elements on controlling the grain size is well known in bulk materials.…”

Section: Fig 1 (Color Online)mentioning

confidence: 99%

Aluminum oxide/titanium dioxide nanolaminates grown by atomic layer deposition: Growth and mechanical properties

Ylivaara¹,

Kilpi²,

Liu

et al. 2016

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Atomic layer deposition (ALD) is based on self-limiting surface reactions. This and cyclic process enable the growth of conformal thin films with precise thickness control and sharp interfaces. A multilayered thin film, which is nanolaminate, can be grown using ALD with tuneable electrical and optical properties to be exploited, for example, in the microelectromechanical systems. In this work, the tunability of the residual stress, adhesion, and mechanical properties of the ALD nanolaminates composed of aluminum oxide (Al2O3) and titanium dioxide (TiO2) films on silicon were explored as a function of growth temperature (110–300 °C), film thickness (20–300 nm), bilayer thickness (0.1–100 nm), and TiO2 content (0%–100%). Al2O3 was grown from Me3Al and H2O, and TiO2 from TiCl4 and H2O. According to wafer curvature measurements, Al2O3/TiO2 nanolaminates were under tensile stress; bilayer thickness and growth temperature were the major parameters affecting the stress; the residual stress decreased with increasing bilayer thickness and ALD temperature. Hardness increased with increasing ALD temperature and decreased with increasing TiO2 fraction. Contact modulus remained approximately stable. The adhesion of the nanolaminate film was good on silicon.

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“…It looks like the peak1 corresponds to BST layer with high dielectric loss peak and hence with low band gap energy whereas the peak2 corresponds to the ZrO 2 layer with low dielectric loss peak and hence with high band gap energy. Two different peaks are also reported in the literature for other multilayered systems [18].…”

Section: Resultsmentioning

confidence: 62%

Relaxor Behavior in Ba_0.8Sr_0.2TiO₃/ZrO₂ Heterostructured Thin Films

Sahoo

Bakhru²,

Kumar

et al. 2012

MRS Proc.

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Ba 0.8 Sr 0.2 TiO 3 (BST) thin films and Ba 0.8 Sr 0.2 TiO 3 /ZrO 2 heterostructured thin films have been successfully fabricated on Pt/Ti/SiO 2 /Si substrates by a sol-gel process. The dielectric properties of these films were measured as a function of temperature in the frequency range of 1 kHz to 1 MHz. It is clearly observed that the dielectric peaks exist and shift to high temperature with the increase of frequency indicating the presence of relaxor-type behavior in the films. Also it is seen that one dielectric peak is observed in single layer BST thin films whereas two dielectric peaks are observed in BST/ZrO 2 heterostructured thin films due to the presence of two dielectric layers having different band gap energies. The variation of peak temperature T m , corresponding to dielectric loss maximum, with frequency and fitting to Arrhenius law gives activation energy of 1.24 eV which is very close to the activation energy of oxygen vacancies in BaTiO 3 . Hence, oxygen vacancies are the active defects which are contributing to the relaxation process in these films.

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Giant dielectric constant dominated by Maxwell–Wagner relaxation in Al2O3/TiO2 nanolaminates synthesized by atomic layer deposition

Cited by 82 publications

References 23 publications

Room Temperature Multiferroicity of Charge Transfer Crystals

Room Temperature Multiferroicity of Charge Transfer Crystals

Aluminum oxide/titanium dioxide nanolaminates grown by atomic layer deposition: Growth and mechanical properties

Relaxor Behavior in Ba_0.8Sr_0.2TiO₃/ZrO₂ Heterostructured Thin Films

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Giant dielectric constant dominated by Maxwell–Wagner relaxation in Al2O3/TiO2 nanolaminates synthesized by atomic layer deposition

Cited by 82 publications

References 23 publications

Room Temperature Multiferroicity of Charge Transfer Crystals

Room Temperature Multiferroicity of Charge Transfer Crystals

Aluminum oxide/titanium dioxide nanolaminates grown by atomic layer deposition: Growth and mechanical properties

Relaxor Behavior in Ba0.8Sr0.2TiO3/ZrO2 Heterostructured Thin Films

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Relaxor Behavior in Ba_0.8Sr_0.2TiO₃/ZrO₂ Heterostructured Thin Films