GHz on-silicon-wafer probing calibration methods

Fraser, Arthur; Gleason, Reed; Strid, E.W.

doi:10.1109/bipol.1988.51067

Cited by 33 publications

(12 citation statements)

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“…3. They are built on the same concept as in [9]. As the topologies of the base-emitter and collector-emitter networks are identical, only the former is shown.…”

Section: Extraction Of Parasitic Elementsmentioning

confidence: 99%

Extraction of small-signal equivalent circuit model parameters for Si/SiGe HBT using S-parameters measurements and one geometrical information

Taher

Schreurs

Nauwelaers

2006

AEU - International Journal of Electronics and Communications

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“…3. They are built on the same concept as in [9]. As the topologies of the base-emitter and collector-emitter networks are identical, only the former is shown.…”

Section: Extraction Of Parasitic Elementsmentioning

confidence: 99%

Extraction of small-signal equivalent circuit model parameters for Si/SiGe HBT using S-parameters measurements and one geometrical information

Taher

Schreurs

Nauwelaers

2006

AEU - International Journal of Electronics and Communications

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“…There are several ways to cancel out the effect of test pattern parasitics from raw measurements of the DUT, whose degree of accuracy is strictly related to the device size, frequency range and test pattern layout. In the past years, thanks to the relatively large size of the devices, removing the shunt parasitics of the pads using the open de-embedding method [31,32] was adequate to achieve a reasonable accuracy up to medium frequencies. At higher frequencies, the effect of series parasitics due to the metal interconnects could not be neglected any more thus a three-step de-embedding method using on-wafer open, short and thru standards was proposed [33].…”

Section: Five-step De-embedding Techniquementioning

confidence: 99%

Characterization and modeling of silicon integrated spiral inductors for high-frequency applications

Biondi

Scuderi

Ragonese

et al. 2007

Analog Integr Circ Sig Process

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This paper presents the characterization and modeling of 0.3-to 0.8-nH radial patterned ground shield circular inductors fabricated in a silicon bipolar technology for RF applications. An extensive validation of measurement accuracy is first addressed taking into account both calibration and de-embedding issues. A novel five-step de-embedding technique is also proposed to improve the accuracy of small inductor measurements. The accuracy of de-embedded experimental data in the range 0.3-0.8 nH is demonstrated by comparing the measured low-frequency inductance with electromagnetic simulations of a large set of inductors. Based on both electromagnetic simulations and experimental measurements, the well-known current sheet expression for circular spirals is revised and modified to improve its accuracy at lower inductance values. The proposed expression is also extended to inductors with polygonal geometries showing significant improvements with respect to the state-of-the-art. Finally, the original and modified expressions are employed in a lumped scalable model for silicon spiral inductors. Comparisons with measured data revealed that the modified expression allows error reductions as large as 20% with respect to the original one, on both inductance and quality factor simulations.

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“…2), we adopted the same concept as in [8]. The element values of these parasitic networks, as well as the element values of the intrinsic device (see section II.B.…”

Section: A Pad and Access Transmission-line Parasiticsmentioning

confidence: 99%

Detecting variations of small-signal equivalent-circuit model parameters in the Si/SiGe HBT process with ANN

Taher

Schreurs

Gillon

et al. 2004

Int J RF and Microwave Comp Aid Eng

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GHz on-silicon-wafer probing calibration methods

Cited by 33 publications

References 0 publications

Extraction of small-signal equivalent circuit model parameters for Si/SiGe HBT using S-parameters measurements and one geometrical information

Extraction of small-signal equivalent circuit model parameters for Si/SiGe HBT using S-parameters measurements and one geometrical information

Characterization and modeling of silicon integrated spiral inductors for high-frequency applications

Detecting variations of small-signal equivalent-circuit model parameters in the Si/SiGe HBT process with ANN

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