GEWE-RC MOSFET: A solution to CMOS technology for RFIC design based on the concept of intercept point

Chaujar, Rishu; Kaur, Ravneet; Saxena, Manoj; Gupta, Mridula; Gupta, R. S.

doi:10.1109/amta.2008.4762978

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Analyzing Gewe-rc Mosfet1

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“…Thus, the average electric field in the channel is enhanced, improving the electron velocity near the source and, hence, the carrier transport efficiency. Some past works on this device such as RF analysis [5] and linearity analysis [6] have been done before and they suggest the feasibility [7] of this model. The work has been complied in Chaujar et al The GEWE-RC MOSFET [8] (Fig.…”

Section: Analyzing Gewe-rc Mosfetmentioning

confidence: 99%