Analysis of novel transparent gate recessed channel (TGRC) MOSFET for improved analog behaviour

Analog Performance Analysis of a Novel 5nm Stacked Oxide Top Bottom Gated Junctionless FinFET

“…0.00E+00 Figure 9 gives the transconductance (𝑔 𝑚 ) of the three device. The Innovative Stacked Oxide FinFET structure gives incremented values of 𝑔 𝑚 for similar input voltage when stacked against the other two devices [13]. In this way the proposed gadget has better qualities with reference to transconductance.…”

“…The upside of high TGF is in the activity of circuits working at low supply voltage. And so we have superior performance [13]. Figure 10 represents the variance in TGF as for changes in 𝑉 𝑔𝑠 for the three devices.…”

Numerical simulation and parametric assessment of GaN buffered trench gate MOSFET for low power applications

“…This can be reasoned as, due to high elemental mobility of the later, the electric field gets enhanced in the channel. As discussed above, the high‐K buffer is having a significant impact on the electric field but it is not so effective in case of electron velocity [21] and the curves of both CTG‐MOSFET and BTG‐MOSFET almost coincide in the first half of the curve though some minute improvement is noticed in the second half (as shown in Fig. 10 a ).…”

Effect of structured parameters on the hot-carrier immunity of transparent gate recessed channel (TGRC) MOSFET

“…When NJD reduces from 15 to 10 nm and from 10 to 5 nm, then electron temperature is reduced by 27.3 and 24.1 % respectively at the drain side due to the incorporation of ITO (Kumar et al 2015) as shown in Fig. 10.…”