Gettering of gold in silicon: A tool for understanding the properties of silicon interstitials

Bronner, G.; Plummer, J.D.

doi:10.1063/1.338264

Cited by 172 publications

(38 citation statements)

References 23 publications

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“…Bronner and Plummer (1985) showed that layers damaged by high-dose argon implantation inject point defects for long periods of time. Later experiments by Bronner and Plummer (1987) confirmed that interstitial injection was the dominant process when they observed no antimony enhancement, which would occur during vacancy injection. Both of these surface treatments are also efFective gettering techniques.…”

Section: Determining the Point-defect Parametersmentioning

confidence: 53%

“…Based on the above similarities and the observation that direct metal diffusion to an infinite sink could not account for the time dependence of gettering profiles, Bronner and Plummer (1987) proposed a causal link between interstitial injection and gold gettering. Under equilibrium conditions, the fraction of gold on substitutional sites is much greater than that on interstitial sites.…”

Section: Determining the Point-defect Parametersmentioning

confidence: 95%

“…A model that accounts for bulk effects on the interstitial diffusivity and reconciles the different measurements of dI in the literature has been proposed . It assumes that interstitials recombine with bulk traps via the reaction qp -11 The enhancement in P diffusivity from gettering (Bronner and Plummer, 1987) and from oxidation [extrapolated from Taniguchi et al (1980)] is taken as a measure of the interstitial excess.…”

Section: Stripe Nidthmentioning

confidence: 99%

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Point defects and dopant diffusion in silicon

1989

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Diffusion in silicon of elements from columns III and V of the Periodic Table is reviewed in theory and experiment. The emphasis is on the interactions of these substitutional dopants with point defects {vacancies and interstitials) as part of their diffusion mechanisms. The goal of this paper is to unify available experimental observations within the framework of a set of physical models that can be utilized in computer simulations to predict diffusion processes in silicon. The authors assess the present state of experimental data for basic parameters such as point-defect diffusivities and equilibrium concentrations and address a number of questions regarding the mechanisms of dopant diffusion. They offer illustrative examples of ways that diffusion may be modeled in one and two dimensions by solving continuity equations for point defects and dopants. Outstanding questions and inadequacies in existing formulations are identified by comparing computer simulations with experimental results. A summary of the progress made in this field in recent years and of directions future research may take is presented.

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Section: Determining the Point-defect Parametersmentioning

confidence: 53%

Section: Determining the Point-defect Parametersmentioning

confidence: 95%

Section: Stripe Nidthmentioning

confidence: 99%

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Point defects and dopant diffusion in silicon

1989

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“…Measurements of the diffusion rate of defects in silicon have been reported in experiments. [8][9][10][11][12][13][14] Current experimental techniques cannot cleanly resolve the diffusion rates of more complex defect species, and due to the atomicscale size of point defects, defect diffusion pathways cannot be resolved at all. 15 Thus, numerical simulations provide a unique way to study the technologically important dynamics of point defects in silicon.…”

mentioning

confidence: 99%

Fast diffusion mechanism of silicon tri-interstitial defects

Barr

Hazzard

et al. 2005

Phys. Rev. B

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Molecular dynamics combined with the nudged elastic band method reveals the microscopic self-diffusion process of compact silicon tri-interstitials. Tight-binding molecular dynamics paired with ab initio density functional calculations speed the identification of diffusion mechanisms. The diffusion pathway can be visualized as a five defect-atom object both translating and rotating in a screwlike motion along ͗111͘ directions. The density functional theory yields a diffusion constant of 4 ϫ 10 −5 exp͑−0.49 eV/ k B T͒ cm 2 / s. The low diffusion barrier of the compact tri-interstitial may be important in the growth of ion-implantation-induced extended interstitial defects.

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“…is the effective diffusivity of Sh. Considering the value given by G. B. Bronner [8] for DIet! at 750°C, [Aus] should be equal to 1.3x1012 cm-3.…”

Section: Contamination Of the Wafersmentioning

confidence: 99%

Metal impurities in multicrystalline silicon solar cells: Comparison between fast and slow diffusers

Dubois

Martinuzzi²

2008

2008 33rd IEEE Photovolatic Specialists Conference

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We compare the influence of fast-diffusing and slow diffusing metal-impurities on the performances of boron doped p-type multicrystalline silicon (mc-Si) solar cells. Solar cells were made from iron (Fe) (fast diffuser), and gold (Au) (slow diffuser), intentionally contaminated wafers. Performances of these cells were compared with those of uncontaminated cells. Fe appears to be rather well tolerated in mc-Si when the latter is used to make solar cells. This is mainly due to the efficacy of the gettering effect developed by the phosphorus diffusion and of the hydrogenation effect which follows the deposition of the antireflection coating. Gettering and hydrogen passivation work complementary in this kind of material. Via Au contamination, we showed the danger of a slow diffuser when a high density of extended defects is present, because there is a marked generation of recombination centres by means of the impurity-defect interaction. In this case gettering effects were limited and despite the efficacy of the hydrogenation effects, the cell performances were strongly affected. We propose solutions for reducing the effect of slow-diffusing metal impurities on the performances of mc-Si solar cells.

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Gettering of gold in silicon: A tool for understanding the properties of silicon interstitials

Cited by 172 publications

References 23 publications

Point defects and dopant diffusion in silicon

Point defects and dopant diffusion in silicon

Fast diffusion mechanism of silicon tri-interstitial defects

Metal impurities in multicrystalline silicon solar cells: Comparison between fast and slow diffusers

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