GeSn technology: Extending the Ge electronics roadmap

Gupta, Shanti S.; Chen, Robert; Magyari-Köpe, Blanka; Lin, Hai; Yang, Bin; Nainani, Aneesh; Nishi, Yoshio; Harris, James S.; Saraswat, Krishna C.

doi:10.1109/iedm.2011.6131568

Cited by 130 publications

(104 citation statements)

References 14 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…The operation of n-channel and p-channel Ge 1−x Sn x MOSFETs has been reported [145,146]. However, the performances are not as high as those expected from the Ge 1−x Sn x material properties [147,148].…”

Section: Electronic Device Applicationsmentioning

confidence: 99%

Growth and applications of GeSn-related group-IV semiconductor materials

Zaima

Nakatsuka

Asano

et al. 2016

2016 IEEE Photonics Society Summer Topical Meeting Series (SUM)

View full text Add to dashboard Cite

We review the technology of Ge 1−x Sn x -related group-IV semiconductor materials for developing Si-based nanoelectronics. Ge 1−x Sn x -related materials provide novel engineering of the crystal growth, strain structure, and energy band alignment for realising various applications not only in electronics, but also in optoelectronics. We introduce our recent achievements in the crystal growth of Ge 1−x Sn x -related material thin films and the studies of the electronic properties of thin films, metals/Ge 1−x Sn x , and insulators/Ge 1−x Sn x interfaces. We also review recent studies related to the crystal growth, energy band engineering, and device applications of Ge 1−x Sn x -related materials, as well as the reported performances of electronic devices using Ge 1−x Sn x related materials.

show abstract

Section: Electronic Device Applicationsmentioning

confidence: 99%

Growth and applications of GeSn-related group-IV semiconductor materials

Zaima

Nakatsuka

Asano

et al. 2016

2016 IEEE Photonics Society Summer Topical Meeting Series (SUM)

View full text Add to dashboard Cite

show abstract

“…With the ability of combining Ge with other elements such as Sn, in a controlled manner, the mobility can be further enhanced through the introduction of strain or band structure modification. [3][4][5] Second, it has theoretically been predicted and experimentally proven that above a critical Sn content Ge 1Àx Sn x is a direct bandgap semiconductor. The direct band structure of Ge 1Àx Sn x was predicted in the 1980s, 6,7 where x ¼ 0:26 was considered the lower limit for the indirect-direct transition.…”

Section: Introductionmentioning

confidence: 99%

Synthesis of Ge1−xSnx alloys by ion implantation and pulsed laser melting: Towards a group IV direct bandgap material

Tran

Pastor

Gandhi

et al. 2016

Journal of Applied Physics

View full text Add to dashboard Cite

The germanium-tin (Ge1−xSnx) material system is expected to be a direct bandgap group IV semiconductor at a Sn content of 6.5−11 at. %. Such Sn concentrations can be realized by non-equilibrium deposition techniques such as molecular beam epitaxy or chemical vapour deposition. In this report, the combination of ion implantation and pulsed laser melting is demonstrated to be an alternative promising method to produce a highly Sn concentrated alloy with a good crystal quality. The structural properties of the alloys such as soluble Sn concentration, strain distribution, and crystal quality have been characterized by Rutherford backscattering spectrometry, Raman spectroscopy, x ray diffraction, and transmission electron microscopy. It is shown that it is possible to produce a high quality alloy with up to 6.2 at. %Sn. The optical properties and electronic band structure have been studied by spectroscopic ellipsometry. The introduction of substitutional Sn into Ge is shown to either induce a splitting between light and heavy hole subbands or lower the conduction band at the Γ valley. Limitations and possible solutions to introducing higher Sn content into Ge that is sufficient for a direct bandgap transition are also discussed.

show abstract

“…6,7 Ge 1-x Sn x can be also used as a channel material and a stressor for Ge MOSFETs. 8,9 Moreover, it is also used for the optical devices because the band structure changes from indirect to direct as Sn concentration increased more than approximately 10 at.%. [10][11][12][13][14] We grew the Ge homoepitaxial films by metal-organic chemical vapor deposition (MOCVD) because MOCVD films can be grown at the low substrate temperature.…”

mentioning

confidence: 99%

Growth of Ge Homoepitaxial Films by Metal-Organic Chemical Vapor Deposition Using t-C₄H₉GeH₃

Suda

Kijima

Ishihara

et al. 2015

ECS J. Solid State Sci. Technol.

View full text Add to dashboard Cite

Ge homoepitaxial films are grown at low growth temperature of 320 • C by metal-organic chemical vapor deposition (MOCVD) using tertiarybutylgermane (t-C 4 H 9 GeH 3 ). We also performed ab initio calculations in order to reveal the chemical reaction for the epitaxial growth. As the result, it was revealed that the t-C 4 H 9 GeH 3 was most likely decomposed into germane (GeH 4 ) and isobutene [CH 2 =C(CH 3 ) 2 ] through the β-hydrogen elimination. We considered that this chemical nature allowed the growth temperature as low as that obtained by GeH 4 precursor with sufficiently suppressed C impurity incorporation.

show abstract

GeSn technology: Extending the Ge electronics roadmap

Abstract: Motivation Semiconducting GeSn alloy, because of tunable bandgap [1] and possibility of high electron and hole mobility [2] offers exciting avenues for bandgap and strain engineering in a silicon compatible technology [3] (Fig.

Cited by 130 publications

References 14 publications

Growth and applications of GeSn-related group-IV semiconductor materials

Growth and applications of GeSn-related group-IV semiconductor materials

Synthesis of Ge1−xSnx alloys by ion implantation and pulsed laser melting: Towards a group IV direct bandgap material

Growth of Ge Homoepitaxial Films by Metal-Organic Chemical Vapor Deposition Using t-C₄H₉GeH₃

Contact Info

Product

Resources

About

GeSn technology: Extending the Ge electronics roadmap

Abstract: Motivation Semiconducting GeSn alloy, because of tunable bandgap [1] and possibility of high electron and hole mobility [2] offers exciting avenues for bandgap and strain engineering in a silicon compatible technology [3] (Fig.

Cited by 130 publications

References 14 publications

Growth and applications of GeSn-related group-IV semiconductor materials

Growth and applications of GeSn-related group-IV semiconductor materials

Synthesis of Ge1−xSnx alloys by ion implantation and pulsed laser melting: Towards a group IV direct bandgap material

Growth of Ge Homoepitaxial Films by Metal-Organic Chemical Vapor Deposition Using t-C4H9GeH3

Contact Info

Product

Resources

About

Growth of Ge Homoepitaxial Films by Metal-Organic Chemical Vapor Deposition Using t-C₄H₉GeH₃