GeSn Heterojunction LEDs on Si Substrates

Oehme, Michael; Kostecki, Konrad; Arguirov, T.; Mußler, Gregor; Ye, Kaiheng; Gollhofer, Martin; Schmid, M.; Kaschel, Mathias; Körner, Roman; Kittler, M.; Buca, D.; Kasper, E.; Schulze, Jörg

doi:10.1109/lpt.2013.2291571

Cited by 81 publications

(50 citation statements)

References 22 publications

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“…A number of groups have utilized this approach to fabricate n-Ge/i-Ge 1-y Sn y /p-Ge heterostructure light emitting diodes (LEDs) in which the GeSn active layers are ensconced by p-and n-type Ge electrodes. 4,5,[22][23][24][25] A drawback of such designs, however, is the formation of two defected Ge 1-y Sn y /Ge interfaces that act as carrier recombination sites, adversely affecting the emission efficiency of the devices. Our previous work in this area was focused on the fabrication of enhanced performance LEDs by adopting improved n-Ge/i-Ge 1-y Sn y /p-Ge 1-z Sn z designs containing a single defected interface.…”

Section: Synthetic Approachmentioning

confidence: 99%

Direct gap Ge1-ySny alloys: Fabrication and design of mid-IR photodiodes

Senaratne

Wallace

Gallagher

et al. 2016

Journal of Applied Physics

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Chemical vapor deposition methods were developed, using stoichiometric reactions of specialty Ge3H8 and SnD4 hydrides, to fabricate Ge1-ySny photodiodes with very high Sn concentrations in the 12%–16% range. A unique aspect of this approach is the compatible reactivity of the compounds at ultra-low temperatures, allowing efficient control and systematic tuning of the alloy composition beyond the direct gap threshold. This crucial property allows the formation of thick supersaturated layers with device-quality material properties. Diodes with composition up to 14% Sn were initially produced on Ge-buffered Si(100) featuring previously optimized n-Ge/i-Ge1-ySny/p-Ge1-zSnz type structures with a single defected interface. The devices exhibited sizable electroluminescence and good rectifying behavior as evidenced by the low dark currents in the I-V measurements. The formation of working diodes with higher Sn content up to 16% Sn was implemented by using more advanced n-Ge1-xSnx/i-Ge1-ySny/p-Ge1-zSnz architectures incorporating Ge1-xSnx intermediate layers (x ∼ 12% Sn) that served to mitigate the lattice mismatch with the Ge platform. This yielded fully coherent diode interfaces devoid of strain relaxation defects. The electrical measurements in this case revealed a sharp increase in reverse-bias dark currents by almost two orders of magnitude, in spite of the comparable crystallinity of the active layers. This observation is attributed to the enhancement of band-to-band tunneling when all the diode layers consist of direct gap materials and thus has implications for the design of light emitting diodes and lasers operating at desirable mid-IR wavelengths. Possible ways to engineer these diode characteristics and improve carrier confinement involve the incorporation of new barrier materials, in particular, ternary Ge1-x-ySixSny alloys. The possibility of achieving type-I structures using binary and ternary alloy combinations is discussed in detail, taking into account the latest experimental and theoretical work on band offsets involving such materials.

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Section: Synthetic Approachmentioning

confidence: 99%

Direct gap Ge1-ySny alloys: Fabrication and design of mid-IR photodiodes

Senaratne

Wallace

Gallagher

et al. 2016

Journal of Applied Physics

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“…In these applications, the features of Ge 1−x Sn x are used for energy band engineering [162][163][164][165][166][167]. Energy band narrowing with Ge 1−x Sn x extends the available wavelength to a longer range compared with Ge photoelectronic devices.…”

Section: Optoelectronic Device Applicationsmentioning

confidence: 99%

Growth and applications of GeSn-related group-IV semiconductor materials

Zaima

Nakatsuka

Asano

et al. 2016

2016 IEEE Photonics Society Summer Topical Meeting Series (SUM)

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We review the technology of Ge 1−x Sn x -related group-IV semiconductor materials for developing Si-based nanoelectronics. Ge 1−x Sn x -related materials provide novel engineering of the crystal growth, strain structure, and energy band alignment for realising various applications not only in electronics, but also in optoelectronics. We introduce our recent achievements in the crystal growth of Ge 1−x Sn x -related material thin films and the studies of the electronic properties of thin films, metals/Ge 1−x Sn x , and insulators/Ge 1−x Sn x interfaces. We also review recent studies related to the crystal growth, energy band engineering, and device applications of Ge 1−x Sn x -related materials, as well as the reported performances of electronic devices using Ge 1−x Sn x related materials.

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“…[1][2][3][4][5][6][7][8][9] The successful demonstration of direct bandgap GeSn light emitting diodes (LEDs), and optically-pumped GeSn lasers, [10][11][12][13][14] indicates the great potential of GeSn for Si-based light sources. GeSn LEDs with double heterostructures (DHS) 11,[15][16][17][18][19][20][21][22] and quantum wells (QWs) [23][24][25][26][27][28][29][30][31] have been reported. It is generally acknowledged that the QW structures could be applied to the LEDs and lasers to improve their device performance.…”

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confidence: 99%

Direct bandgap type-I GeSn/GeSn quantum well on a GeSn- and Ge- buffered Si substrate

et al. 2018

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This paper reports the comprehensive characterization of a Ge0.92Sn0.08/Ge0.86Sn0.14/Ge0.92Sn0.08 single quantum well. By using a strain relaxed Ge0.92Sn0.08 buffer, the direct bandgap Ge0.86Sn0.14 QW was achieved, which is unattainable by using only a Ge buffer. Band structure calculations and optical transition analysis revealed that the quantum well features type-I band alignment. The photoluminescence spectra showed dramatically increased quantum well peak intensity at lower temperature, confirming that the Ge0.86Sn0.14 quantum well is a direct bandgap material.

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GeSn Heterojunction LEDs on Si Substrates

Cited by 81 publications

References 22 publications

Direct gap Ge1-ySny alloys: Fabrication and design of mid-IR photodiodes

Direct gap Ge1-ySny alloys: Fabrication and design of mid-IR photodiodes

Growth and applications of GeSn-related group-IV semiconductor materials

Direct bandgap type-I GeSn/GeSn quantum well on a GeSn- and Ge- buffered Si substrate

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