GeSe Thin-Film Solar Cells Fabricated by Self-Regulated Rapid Thermal Sublimation

Xue, Desheng; Liu, Shunchang; Dai, Chen‐Min; Chen, Shiyou; He, Chao; Zhao, Lu; Hu, Jin‐Song

doi:10.1021/jacs.6b11705

Cited by 245 publications

(223 citation statements)

References 44 publications

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“…Our DFT calculations indicate that SnSe have an indirect bandgap both for bulk and its 2D counterparts. The bandgap increases from 1.12 eV for the bulk to 1.43 eV for SnSe monolayer (Table S1, Supporting Information), in agreement with recent reports (Table S2, Supporting Information) . From the band structure and projected density of states (PDOS) (Figure c), it can be seen that the conduction band (CB) minimum and the top valence band (VB) maximum are both dominated by the Sn 4p and Se 4p orbitals for bulk and SnSe monolayer (Figure S6 and Table S3, Supporting Information).…”

Section: Resultssupporting

confidence: 88%

“…Similar to many transition metal dichalcogenides, they have been predicted to show indirect to direct bandgap crossover at the monolayer limit, which however still await experimental confirmation. On the other hand, their bulk counterparts have been known for unconventional superconductivity, ultrahigh thermoelectric figure of merit, and photovoltaic properties, to name a few. The interplay between structural two‐dimensionality and these features deserves a thorough examination, which is hampered by the limited access of high quality samples.…”

Section: Introductionmentioning

confidence: 99%

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Linear and Nonlinear Optical Properties of Few‐Layer Exfoliated SnSe Nanosheets

Xian

Cai

et al. 2019

Advanced Optical Materials

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multinary [11,12] chalcogenides of transition metals as well as P-block elements (e.g., groups 13-15). [13][14][15][16][17][18][19][20][21] These chalcogenides form the basis for the explosion of experimental and theoretical research in the recent decade into the layer-number dependent optical, electrical properties, and potential applications of these 2D materials. [22][23][24][25] While a 2D structure for P-block elements besides graphite carbon is uncommon, black phosphorous (BP) has been an outstanding example, which adopts a GeS-type structure. [16][17][18][19][20][21] The connection between BP and the monochalcogenide GeS is quite obvious: they are isoelectronic with ten valence electrons per pair of atoms. [26][27][28][29] The monochalcogenide of group IV elements (i.e., Ge, Sn) has also been known as four-six-enes. [30] The most important difference from phosphorene is that they do not possess inversion symmetry for monolayer (or stacks with odd layer numbers), thus making them important candidates for exploiting piezo/ferro-electronic response as well as valleypolarized optical properties. [29,[31][32][33][34] Recently, their strong relevance with phosphorene and the chalcogenide 2D materials has stimulated growing interest in exploration of the potential properties from valleytronics to optical nonlinearity. [28,[35][36][37][38] Similar to many transition metal dichalcogenides, they have been predicted to show indirect to direct bandgap crossover at the monolayer limit, [28,[39][40][41] which however still await experimental confirmation. On the other hand, their bulk counterparts have been known for unconventional superconductivity, [42] ultrahigh thermoelectric figure of merit, [43][44][45] and photovoltaic properties, [41,[46][47][48] to name a few. The interplay between structural two-dimensionality and these features deserves a thorough examination, which is hampered by the limited access of high quality samples. Up to present, sheets of GeSe (or SnSe) with thickness of around 100 nm as well as Ge(Sn)Se nanowires and nanoplates have been reported by vapor transport process and liquid phase growth, [49][50][51][52][53][54][55][56][57][58][59] while access to few-layer and monolayer samples with high crystallinity by a top-down approach remain quite limited.In the present work, SnSe nanosheets were synthesized by sonication assisted exfoliation in different organic solvents. High quality FL SnSe nanosheets and clear layer number dependent optical bandgap is found, which is corroborated by our density functional theory (DFT) calculations. In addition, we also characterized the nonlinear optical absorption of FL SnSe Monochalcogenides of group IV elements have been considered as phosphorene analogs due to their similar crystal and electronic structure. Here, few-layer SnSe nanosheets are synthesized by a sonication-assisted liquid phase exfoliation process and their linear and nonlinear optical properties are examined. The as-exfoliated few-layer (FL) SnSe demonstrates layer thickness from 2 to 10 nm a...

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Section: Resultssupporting

confidence: 88%

Section: Introductionmentioning

confidence: 99%

Linear and Nonlinear Optical Properties of Few‐Layer Exfoliated SnSe Nanosheets

Xian

Cai

et al. 2019

Advanced Optical Materials

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“…4(a)and (b). The binding energies of Ge 3d and Se 3d in our measurements were in good agreement with those of GeSe compounds in literatures,19,29 as shown inFig. 4(c) and (d), indicating that the most probable valence states of Ge and Se were +2 and -2 in the TNAs, and Se 0 , Ge 0 and Ge 4+ were not detected within the limitation of XPS resolution.…”

supporting

confidence: 91%

Synthesis and photoluminescence of high density GeSe triangular nanoplate arrays on Si substrates

Li¹,

Zhang²,

Lv³

et al. 2020

Nanotechnology

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We have grown germanium selenide (GeSe) triangular nanoplate arrays (TNAs) with a high density (3.82 × 10 6 / mm 2 ) on the Si (111) substrate using a simple thermal evaporation method. The thickness and trilateral lengths of a single triangular nanoplate were statistically estimated by atomic force microscopy (AFM) as 44 nm, 365 nm, 458 nm and 605 nm, respectively. Transmission electron microscopy (TEM) images and Xray diffraction (XRD) patterns show that the TNAs were composed of single crystalline GeSe phase. The Se-related defects in the lattice were also revealed by TEM images and Raman vibration modes. Unlike previously reported GeSe compounds, the GeSe TNAs exhibited temperature-dependent photoluminescence (PL). In addition, not previously reported PL peak (1.25 eV) of the 44 nm thick TNAs at 5 K was in the gaps between those of GeSe monolayers (1.5 nm) and thin films (400 nm), revealing a close relationship between the PL peak and the thickness of GeSe. The high-density structure and temperature-dependent PL of the TNAs on the Si substrate may be useful for temperature controllable semiconductor nanodevices.

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“…The combinatorial approach emphasized here should be applicable to Sb 2 Se 3 photovoltaics with different buffer layer and different device configuration, and also be extendable to other emerging thin film solar cells such as SnS, [10] GeSe, [11] Sb 2 S 3 , [5a] and CuSbSe 2 . Finally, the damp-heat and light soaking stability of our TiO 2 /Sb 2 Se 3 was also evaluated.…”

mentioning

confidence: 99%

Accelerated Optimization of TiO₂/Sb₂Se₃ Thin Film Solar Cells by High‐Throughput Combinatorial Approach

Chen

Zhao

et al. 2017

Advanced Energy Materials

130

100

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The binary semiconductor of antimony selenide (Sb 2 Se 3 ) has received wide attention as potential solar cell absorber material recently due to its attractive optoelectronic properties such as proper bandgap (1.17 eV direct and 1.03 eV indirect), large absorption coefficient (>10 5 cm −1 ), decent carrier mobility (≈10 cm 2 V −1 s −1 ), and long carrier lifetime (≈60 ns) as well as its low toxicity, low cost, and earth-abundant constituents. [1] Based on the rapid thermal evaporation (RTE) deposition technology, power conversion efficiencies (PCE) were achieved in superstrate CdS-based Sb 2 Se 3 and Sb 2 (S x ,Se 1−x ) 3 thin film solar cells as 5.6% and 5.79%, [2] respectively. Simultaneously, the substrate Sb 2 Se 3 solar cells with CdS buffer layer were also rapidly developed with PCE over 4% reported by several groups. [3] The traditional CdS buffer layer is toxic to human and environment, and the device reveals low

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GeSe Thin-Film Solar Cells Fabricated by Self-Regulated Rapid Thermal Sublimation

Cited by 245 publications

References 44 publications

Linear and Nonlinear Optical Properties of Few‐Layer Exfoliated SnSe Nanosheets

Linear and Nonlinear Optical Properties of Few‐Layer Exfoliated SnSe Nanosheets

Synthesis and photoluminescence of high density GeSe triangular nanoplate arrays on Si substrates

Accelerated Optimization of TiO₂/Sb₂Se₃ Thin Film Solar Cells by High‐Throughput Combinatorial Approach

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GeSe Thin-Film Solar Cells Fabricated by Self-Regulated Rapid Thermal Sublimation

Cited by 245 publications

References 44 publications

Linear and Nonlinear Optical Properties of Few‐Layer Exfoliated SnSe Nanosheets

Linear and Nonlinear Optical Properties of Few‐Layer Exfoliated SnSe Nanosheets

Synthesis and photoluminescence of high density GeSe triangular nanoplate arrays on Si substrates

Accelerated Optimization of TiO2/Sb2Se3 Thin Film Solar Cells by High‐Throughput Combinatorial Approach

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Product

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Accelerated Optimization of TiO₂/Sb₂Se₃ Thin Film Solar Cells by High‐Throughput Combinatorial Approach