Germanium Telluride Absorber Layer, A proposal for Low Illumination Photovoltaic Application Using AMPS 1D

Noman, Muhammad; Abden, M.J.; Islam, Mohammad Aminul

doi:10.1109/ic4me2.2018.8465494

Cited by 10 publications

(6 citation statements)

References 17 publications

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“…With the lower absorber thickness, the overall electric field strength increases and the carrier transports through drift rather than drive, which leads to fastening the mobility, hence increasing the device FF. [73] Also, a less thick absorber in PSCs increases the perovskite crystallinity and fewer defects can assist in raising the FF, which is consistent with previous work. [75] The impact of thickness on current density versus voltage curve is depicted in Figure 8a,f with the highlighted area between the range of 0.8-1.2 V for comparison purposes.…”

Section: Thickness Optimization Of Perovskitesupporting

confidence: 89%

“…The enhancement of V oc from 1.54 to 1.58 V for a 400 nm thick absorber is observed due to the reduction in dark saturation current J 0 and rate of carrier recombination at less thickness as V oc is a function of J 0 and J sc (Equation ( 14)). [72] Similar trends in V oc were reported by Noman et al [73] supported by a significant decrease in reverse saturated current density. However, the absorber layer's thickness fluctuation, as illustrated in Figure 8c, did not demonstrate any discernible difference.…”

Section: Thickness Optimization Of Perovskitesupporting

confidence: 82%

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First‐Principle Density Functional Theory‐Derived Nonleaded KSn_1−xGe_xI₃‐Based Perovskite Solar Cells: A Theoretical Study

Chauhan,

Oudhia

2023

Energy Tech

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The lead toxicity and instability of conventional all‐inorganic lead halide perovskites hinder the production of efficient and stable nontoxic perovskite solar cells (PSCs), which prompts the search for viable nonleaded substitutes for photovoltaic (PV) applications. The present study investigates the optoelectronic characteristics of proposed lead‐free orthorhombic perovskites KSn1−xGexI3 (x = 0, 0.5, 1) via first‐principle density functional theory (DFT), to get an insight into their PV applicability. DFT computation with generalized gradient approximation of Perdew–Burke–Ernzerhof exchange–correlation is performed to extract the parameters such as bandgap, mobility, dielectric constant, conduction band minima and valence band maxima of KSnI3, KSn0.5Ge0.5I3, and KGeI3 to demonstrate their capability as a functional layer in PSCs. These characteristics have been utilized to simulate PSCs. The simulated devices FTO/SnO2/KSnI3/Spiro‐OMeTAD/Au, FTO/SnO2/KSn0.5Ge0.5I3/Spiro‐OMeTAD/Au, and FTO/SnO2/KGeI3/Spiro‐OMeTAD/Au exhibit the efficiency of 8.23%, 8.89%, and 4.12%, respectively. Thereafter, the most effective KSn0.5Ge0.5I3‐cell with an efficiency of 8.89% is selected for additional optimization of thickness, defect density, and doping concentration to achieve maximum efficiency. The distinctive green proposes KSn0.5Ge0.5I3‐PSC, with an optimized efficiency of 20.29% stands out among the top PSC technologies. Future research on this subject will focus on synthesizing the proposed novel KSn0.5Ge0.5I3‐PSC and evaluating the performance of the KGeI3‐PSC.

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Section: Thickness Optimization Of Perovskitesupporting

confidence: 89%

Section: Thickness Optimization Of Perovskitesupporting

confidence: 82%

First‐Principle Density Functional Theory‐Derived Nonleaded KSn_1−xGe_xI₃‐Based Perovskite Solar Cells: A Theoretical Study

Chauhan,

Oudhia

2023

Energy Tech

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“…The following supporting information can be downloaded at: https:// www.mdpi.com/article/10.3390/cryst12070878/s1, Figure S1 S1: Physical parameters of the incident, transmitted spectrum definitions, and their units; Table S2: Materials parameters of the top sub-cell used in SCAPS-1D simulator; Table S3: Materials parameters of the top bottom-cell used in SCAPS-1D simulator. References [3,25,30,31,45,46,[57][58][59][60][61][62] are cited in the Supplementary Materials.…”

Section: Supplementary Materialsmentioning

confidence: 99%

High-Efficiency Electron Transport Layer-Free Perovskite/GeTe Tandem Solar Cell: Numerical Simulation

et al. 2022

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The primary purpose of recent research has been to achieve a higher power conversion efficiency (PCE) with stable characteristics, either through experimental studies or through modeling and simulation. In this study, a theoretical analysis of an efficient perovskite solar cell (PSC) with cuprous oxide (Cu2O) as the hole transport material (HTM) and zinc oxysulfide (ZnOS) as the electron transport material (ETM) was proposed to replace the traditional HTMs or ETMs. In addition, the impact of doping the perovskite layer was investigated. The results show that the heterostructure of n-p PSC without an electron transport layer (ETL) could replace the traditional n-i-p structure with better performance metrics and more stability due to reducing the number of layers and interfaces. The impact of HTM doping and thickness was investigated. In addition, the influence of the energy gap of the absorber layer was studied. Furthermore, the proposed PSC without ETL was used as a top sub-cell with germanium-telluride (GeTe) as a bottom sub-cell to produce an efficient tandem cell and boost the PCE. An ETL-free PSC/GeTe tandem cell is proposed for the first time to provide an efficient and stable tandem solar cell with a PCE of 45.99%. Finally, a comparison between the performance metrics of the proposed tandem solar cell and those of other recent studies is provided. All the simulations performed in this study are accomplished by using SCAPS-1D.

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“…We note that the distribution of excited electrons is rather important because GeTe is generally unintentionally p-doped (~10 21 cm −3 [35]), and the number of excited holes is much smaller than that of the intrinsic holes. Because the electron affinity of GeTe is 4.8 eV [36] and the work function of polycrystalline Ag is 4.26 eV [37], Fermi level aligning at equilibrium makes a downward band bending toward the Ag-GeTe interface. Therefore, negative charges are expected to move to the nearest electrode and positive charges are expected to move in the opposite direction.…”

Section: Mechanism Of Slow Reversible Resistance Variationmentioning

confidence: 99%

Reversible and irreversible resistance changes for gamma-ray irradiation in silver-diffused germanium telluride

et al. 2020

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We report on the irreversible and reversible resistance changes for γ-ray irradiation in amorphous GeTe thin films with Ag electrodes. The γ-ray irradiation at a dose of 1 kGy irreversibly decreased the DC resistance by two orders of magnitude. The irreversible resistance change was caused by the formation of a conductive region that consisted of Ag-Te compounds. In-situ real-time DC resistance and AC impedance measurements revealed reversible variations in several electrode structures with DC resistances ranging widely from about 10 kΩ to about 5 MΩ. The DC resistance decreased by 2-5% with a time constant of about 3-7 min following the γ-ray irradiation with a dose rate of 0.5-2 kGy/h, and recovered on interruption. The AC impedance measurement was analyzed with a simple equivalent circuit consisting of a parallel RC circuit of the Ag-diffused GeTe matrix, connected serially to the interface resistance. The interface resistance and the capacitance of the matrix exhibited a fast reversible variation, which is explained by trapping and detrapping of carriers in the charged defects formed by the Ag re-diffusion. The resistance of the matrix showed a slow reversible variation with a time constant of 7 min, similar to the DC resistance. The slow reversible variation is attributed to the growth and dissolution of the conductive region caused by the Ag re-diffusion.

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Germanium Telluride Absorber Layer, A proposal for Low Illumination Photovoltaic Application Using AMPS 1D

Cited by 10 publications

References 17 publications

First‐Principle Density Functional Theory‐Derived Nonleaded KSn_1−xGe_xI₃‐Based Perovskite Solar Cells: A Theoretical Study

First‐Principle Density Functional Theory‐Derived Nonleaded KSn_1−xGe_xI₃‐Based Perovskite Solar Cells: A Theoretical Study

High-Efficiency Electron Transport Layer-Free Perovskite/GeTe Tandem Solar Cell: Numerical Simulation

Reversible and irreversible resistance changes for gamma-ray irradiation in silver-diffused germanium telluride

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Germanium Telluride Absorber Layer, A proposal for Low Illumination Photovoltaic Application Using AMPS 1D

Cited by 10 publications

References 17 publications

First‐Principle Density Functional Theory‐Derived Nonleaded KSn1−xGexI3‐Based Perovskite Solar Cells: A Theoretical Study

First‐Principle Density Functional Theory‐Derived Nonleaded KSn1−xGexI3‐Based Perovskite Solar Cells: A Theoretical Study

High-Efficiency Electron Transport Layer-Free Perovskite/GeTe Tandem Solar Cell: Numerical Simulation

Reversible and irreversible resistance changes for gamma-ray irradiation in silver-diffused germanium telluride

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First‐Principle Density Functional Theory‐Derived Nonleaded KSn_1−xGe_xI₃‐Based Perovskite Solar Cells: A Theoretical Study

First‐Principle Density Functional Theory‐Derived Nonleaded KSn_1−xGe_xI₃‐Based Perovskite Solar Cells: A Theoretical Study