Germanium-on-Silicon Mid-Infrared Arrayed Waveguide Grating Multiplexers

Malik, Aditya; Muneeb, Muhammad; Pathak, Shibnath; Shimura, Yosuke; Campenhout, Joris Van; Loo, Roger; Roelkens, Günther

doi:10.1109/lpt.2013.2276479

Cited by 135 publications

(78 citation statements)

References 12 publications

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“…One strategy involves replacing the lossy silicon oxide cladding with other materials exemplified by silicon-on-nitride ( Figure 3A-B) [10] and germanium-on-nitride [17] or with air cladding in pedestal [11,18,19] or suspended silicon structures [12][13][14][20][21][22][23] (Figure 3C-H). Another option is Ge-on-Si (or SiGeon-Si), which claims the advantage of compatibility with Si CMOS processing, as high-quality Ge can be epitaxially grown on Si ( Figure 3I-J) [15,17,[24][25][26][27][28]. Furthermore, the high index of Ge means that the Si substrate can function as the bottom cladding.…”

Section: Waveguides and Passive Devicesmentioning

confidence: 99%

Mid-infrared integrated photonics on silicon: a perspective

et al. 2017

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Abstract:The emergence of silicon photonics over the past two decades has established silicon as a preferred substrate platform for photonic integration. While most silicon-based photonic components have so far been realized in the near-infrared (near-IR) telecommunication bands, the mid-infrared (mid-IR, 2-20-μm wavelength) band presents a significant growth opportunity for integrated photonics. In this review, we offer our perspective on the burgeoning field of mid-IR integrated photonics on silicon. A comprehensive survey on the state-of-the-art of key photonic devices such as waveguides, light sources, modulators, and detectors is presented. Furthermore, on-chip spectroscopic chemical sensing is quantitatively analyzed as an example of mid-IR photonic system integration based on these basic building blocks, and the constituent component choices are discussed and contrasted in the context of system performance and integration technologies.

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Section: Waveguides and Passive Devicesmentioning

confidence: 99%

Mid-infrared integrated photonics on silicon: a perspective

et al. 2017

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“…Mis en forme : Indice µm while using a fully monolithic and robust approach [9][10][11]. Furthermore, the implementation of Ge-based optical systems provides good prospects to develop nonlinear mid-IR optical devices, owing to its larger nonlinear refractive index than Si and the suppression of two-photon absorption in Ge for λ > 3.17 µm [12].…”

Section: Mis En Forme : Indicementioning

confidence: 99%

Ge-rich graded-index Si_1-xGex waveguides with broadband tight mode confinement and flat anomalous dispersion for nonlinear mid-infrared photonics

Ramírez¹,

Vakarin²,

Frigerio³

et al. 2017

Opt. Express

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To cite this version:J-M Ramirez, V Vakarin, J Frigerio, P Chaisakul, D Chrastina, et al.. Ge-rich graded-index Si 1-x Ge x waveguides with broadband tight mode confinement and flat anomalous dispersion for nonlinear mid-infrared photonics. Optics Express, Optical Society of America, 2017, 25 (6) Abstract:This work explores the use of Ge-rich graded-index Si 1-x Ge x rib waveguides as building blocks to develop integrated nonlinear optical devices for broadband operation in the mid-IR. The vertical Ge gradient concentration in the waveguide core renders unique properties to the guided optical mode, providing tight mode confinement over a broadband mid-IR wavelength range from λ = 3 µm to 8 µm. Additionally, the gradual vertical confinement pulls the optical mode upwards in the waveguide core, overlapping with the Ge-rich area where the nonlinear refractive index is larger. Moreover, the Ge-rich graded-index Si 1-x Ge x waveguides allow efficient tailoring of the chromatic dispersion curves, achieving flat anomalous dispersion for the quasi-TM optical mode with D ≤ 14 ps/nm/km over a ~ 1.4 octave span while retaining an optimum third-order nonlinear parameter, γ eff . These results confirm the potential of Ge-rich graded-index Si 1-x Ge x waveguides as an attractive platform to develop mid-IR nonlinear approaches requiring broadband dispersion engineering.

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“…AWGs were also designed in Si 3 N 4 [41] for very near-IR (900 nm) and in Ge-on-Si [42] for mid-IR (5 μm) wavelengths. Both of them showed performance that was comparable to the more mature SOI AWGs, with a CT of 20 dB and insertion loss <2.5 dB.…”

Section: On-chip Spectrometersmentioning

confidence: 99%

Silicon and silicon nitride photonic circuits for spectroscopic sensing on-a-chip [Invited]

et al. 2015

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There is a rapidly growing demand to use silicon and silicon nitride (Si 3 N 4 ) integrated photonics for sensing applications, ranging from refractive index to spectroscopic sensing. By making use of advanced CMOS technology, complex miniaturized circuits can be easily realized on a large scale and at a low cost covering visible to mid-IR wavelengths. In this paper we present our recent work on the development of silicon and Si 3 N 4 -based photonic integrated circuits for various spectroscopic sensing applications. We report our findings on waveguide-based absorption, and Raman and surface enhanced Raman spectroscopy. Finally we report on-chip spectrometers and on-chip broadband light sources covering very near-IR to mid-IR wavelengths to realize fully integrated spectroscopic systems on a chip.

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Germanium-on-Silicon Mid-Infrared Arrayed Waveguide Grating Multiplexers

Cited by 135 publications

References 12 publications

Mid-infrared integrated photonics on silicon: a perspective

Mid-infrared integrated photonics on silicon: a perspective

Ge-rich graded-index Si_1-xGex waveguides with broadband tight mode confinement and flat anomalous dispersion for nonlinear mid-infrared photonics

Silicon and silicon nitride photonic circuits for spectroscopic sensing on-a-chip [Invited]

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