Germanium MOS transistors on sapphire and alumina platforms

Baine, Paul; Gamble, Harold; Armstrong, B.M.; Mitchell, S.J.N.; McNeill, David; Rainey, Paul; Low, Yee; Low, Y.W.; Tantraviwat, Doldet

doi:10.1109/soi.2009.5318767

Cited by 3 publications

(4 citation statements)

References 3 publications

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“…Note the carriertype change from n to p-this is consistent with the depletion mode action observed in p-MOS transistors. 11 Hydrogen in germanium is known to cause activation of otherwise inactive impurities. 20 For example, H-C and H-Si complexes are known to behave as shallow acceptors, and this is the most likely explanation for what is observed in Fig.…”

Section: Resultsmentioning

confidence: 99%

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Micro-Raman and Spreading Resistance Analysis on Beveled Implanted Germanium for Layer Transfer Applications

Rainey

Wasyluk

Perova

et al. 2011

Electrochem. Solid-State Lett.

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Section: Resultsmentioning

confidence: 99%

“…11 The possibility that the reduced performance of the devices on smart-cut substrates was related to implantation damage was the main motivation for this work. In recent years, several studies on electrically active defects related to hydrogen implantation in germanium have been performed using deep level transient spectroscopy ͑DLTS͒.…”

mentioning

confidence: 99%

Micro-Raman and Spreading Resistance Analysis on Beveled Implanted Germanium for Layer Transfer Applications

Rainey

Wasyluk

Perova

et al. 2011

Electrochem. Solid-State Lett.

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“…with p-i-n junction where the intrinsic region is 10 μm. According to Baine et al, [31] and Low et al, [32] a dose of 5 x10 15 cm -2 of boron (p-type dopant) implanted into bulk Ge at energy of 30 keV is enough to form a selective p-region with good performance. Dehlinger et al, [33] stated that a dose of 10 15 cm 2 of n-type dopant implanted to wafer could give diode characteristic.…”

Section: Photodiode Design and Simulationmentioning

confidence: 99%

Development of photodiode via the rapid melt growth (RMG) materials for energy conversion device

Zainal

Mitchell

McNeill

et al. 2020

IJEECS

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Germanium (Ge) photodiodes were fabricated with the new RMG crucible materials that were established in this study. Results show that Ge large square patterns with size of 208 µm x 208 µm were unable to be achieved if ion implantation process was used in formation of photodiode. Delamination can be observed on all test samples during polycrystalline silicon (poly-Si) deposition at 620 oC. This result was in contrast to a previous intrinsic Ge test structure, where good formation of squares with size similar to that 208 µm x 208 µm had been successfully attained even with high annealing temperature above 938 oC. This indicates that doping through ion implantation has affected Ge film and caused delamination even at low temperature. However, good formations of Ge stripes were attained along with the ion implantation process in fabricating the photodiode. Results show that the sheet resistance of Ge stripe has significantly decreased compared to previous Ge resistors. The better resistance is due to the thicker (500 nm) Ge layer. In the case of Ge stripes with a p-i-n junction, only small fraction of test samples have shown a diode characteristic but with high leakage current. Results of I-V measurement show that a large fraction of test samples produced resistor characteristics. The high leakage current is believed due to the fact that the Ge films formed at this stage were polycrystalline in structure. Thus the grain size of Ge stripe has affected the performance. Slight changes on the I-V characteristic of single Ge can be observed when samples were tested under illumination. Therefore, it has potential to be used for future development of energy conversion device.

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“…Germanium, in particular, has been attracting a lot of research interest as a new channel material due to its higher intrinsic carrier mobilities as compared to Si. Ge devices with different gate dielectrics have been demonstrated showing promising results (1)(2)(3)(4). Furthermore, to minimize leakage current, germanium MOSFETs are best fabricated using thin GeOI (germanium on insulator) architecture, illustrated in Figure 1.…”

Section: Introductionmentioning

confidence: 99%

Electrical Characterization of ALD Al₂O₃ and HfO₂ Films on Germanium

Tantraviwat¹,

Low²,

Baine³

et al. 2010

ECS Trans.

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Al2O3 and HfO2 films were deposited on germanium substrates by atomic layer deposition (ALD) and analyzed by MOS capacitor electrical characterization. In-situ plasma nitridation performed prior to ALD was found to improve the stability of the interface. For Al2O3/GeON/Ge capacitors, a 450°C anneal in nitrogen ambient reduced hysteresis and oxide fixed charge to 90 mV and 1012 cm-2 respectively, with low leakage current density. On the contrary, degradation was observed for un-nitrided Al2O3/Ge capacitors after 300 and 400°C post-metal anneals. HfO2/GeON/Ge capacitors benefitted from a 400°C densification anneal but exhibited degradation after post-metal anneals at temperatures greater than 300°C. This degradation is attributed to the influence of Al electrodes on the HfO2 gate stack. HfO2 is considered to be a suitable material for the gate stack and Al2O3 for the buried dielectric in a GeOI structure.

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Germanium MOS transistors on sapphire and alumina platforms

Cited by 3 publications

References 3 publications

Micro-Raman and Spreading Resistance Analysis on Beveled Implanted Germanium for Layer Transfer Applications

Micro-Raman and Spreading Resistance Analysis on Beveled Implanted Germanium for Layer Transfer Applications

Development of photodiode via the rapid melt growth (RMG) materials for energy conversion device

Electrical Characterization of ALD Al₂O₃ and HfO₂ Films on Germanium

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Germanium MOS transistors on sapphire and alumina platforms

Cited by 3 publications

References 3 publications

Micro-Raman and Spreading Resistance Analysis on Beveled Implanted Germanium for Layer Transfer Applications

Micro-Raman and Spreading Resistance Analysis on Beveled Implanted Germanium for Layer Transfer Applications

Development of photodiode via the rapid melt growth (RMG) materials for energy conversion device

Electrical Characterization of ALD Al2O3 and HfO2 Films on Germanium

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Electrical Characterization of ALD Al₂O₃ and HfO₂ Films on Germanium