Germanium MOS capacitors incorporating ultrathin high-/spl kappa/ gate dielectric

Chui, Chi On; Ramanathan, Shriram; Triplett, B. B.; McIntyre, Paul C.; Saraswat, Krishna C.

doi:10.1109/led.2002.801319

Cited by 336 publications

(70 citation statements)

References 15 publications

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“…Some other results in the recent works are also shown for comparison. 4,[28][29][30] The HfO 2 /Y-GeO 2 /Ge stacks achieve one of the thinnest EOT with promising interface properties and acceptable leakage current.…”

Section: Demonstration Of Bulk Electrical Properties and Eot Scalabilitymentioning

confidence: 99%

Structural and thermodynamic consideration of metal oxide doped GeO2 for gate stack formation on germanium

Lee

Zhang

et al. 2014

Journal of Applied Physics

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A systematic investigation was carried out on the material and electrical properties of metal oxide doped germanium dioxide (M-GeO2) on Ge. We propose two criteria on the selection of desirable M-GeO2 for gate stack formation on Ge. First, metal oxides with larger cation radii show stronger ability in modifying GeO2 network, benefiting the thermal stability and water resistance in M-GeO2/Ge stacks. Second, metal oxides with a positive Gibbs free energy for germanidation are required for good interface properties of M-GeO2/Ge stacks in terms of preventing the Ge-M metallic bond formation. Aggressive equivalent oxide thickness scaling to 0.5 nm is also demonstrated based on these understandings.

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Section: Demonstration Of Bulk Electrical Properties and Eot Scalabilitymentioning

confidence: 99%

Structural and thermodynamic consideration of metal oxide doped GeO2 for gate stack formation on germanium

Lee

Zhang

et al. 2014

Journal of Applied Physics

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“…16,22 Compared to the gate stacks without surface passivation, reduction in J G was observed, which is likely attributed to suppressed surface states assisted tunneling. 31 With EOT of 2.3 nm, the InGaAs MOS capacitor demonstrates a low J G of 1.54 ϫ 10 −5 A / cm 2 at V G = V FB −1 V.…”

Section: Resultsmentioning

confidence: 97%

Study of surface passivation of strained indium gallium arsenide by vacuum annealing and silane treatment

Chin

Wang

Lim

et al. 2008

Journal of Applied Physics

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A study of the surface passivation of strained InGaAs using vacuum annealing and silane (SiH4) passivation was reported for the first time. X-ray photoelectron spectroscopy reveals the elimination of As–O bond after vacuum annealing and SiH4 surface passivation. Vacuum annealing eliminated poor quality native oxide on InGaAs surface, while a thin silicon interfacial layer was formed by SiH4 treatment, therefore effectively preventing the InGaAs surface from exposure to an oxidizing ambient during high-k dielectric deposition. Transmission electron micrograph confirmed the existence of a thin oxidized silicon layer between high-k dielectric and InGaAs. By incorporating this surface technology during gate stack formation, TaN/HfAlO/InGaAs metal-oxide-semiconductor capacitors demonstrate superior C-V characteristics with negligible frequency dispersion, small hysteresis, and interface state density as low as (3.5×1011)–(5.0×1011) cm−2 eV−1.

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“…4͒ or a highdielectric crystal, such as ZrO 2 , can be used in the device. 5 These techniques allow for the development of Si/Ge heterostructure devices such as metal-oxide-semiconductor field effect transistors, MOSFETs. The heterostructure MOSFET is primarily Si so existing fabrication technology can be used, but Ge is included as a buried channel between the source and drain to allow for high-speed conductivity.…”

Section: Introductionmentioning

confidence: 99%

Structure, energy, and electronic states of vacancies in Ge nanocrystals

2010

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The atomic structure, energy of formation, and electronic states of vacancies in H-passivated Ge nanocrystals are studied by density-functional theory methods. The competition between quantum self-purification and the free surface relaxations is investigated. The free surfaces of crystals smaller than 2 nm distort the Jahn-Teller relaxation and enhance the reconstruction bonds. This increases the energy splitting of the quantum states and reduces the energy of formation to as low as 1 eV per defect in the smallest nanocrystals. In crystals larger than 2 nm the observed symmetry of the Jahn-Teller distortion matches the symmetry expected for bulk Ge crystals. Near the nanocrystal's surface the vacancy is found to have an energy of formation no larger than 0.5-1.4 eV per defect, but a vacancy more than 0.7 nm inside the surface has an energy of formation that is the same as in bulk Ge. No evidence of the self-purification effect is observed; the dominant effect is the free surface relaxations, which allow for the enhanced reconstruction. From the evidence in this paper, it is predicted that for moderate sized Ge nanocrystals a vacancy inside the crystal will behave bulklike and not interact strongly with the surface, except when it is within 0.7 nm of the surface.

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Germanium MOS capacitors incorporating ultrathin high-/spl kappa/ gate dielectric

Cited by 336 publications

References 15 publications

Structural and thermodynamic consideration of metal oxide doped GeO2 for gate stack formation on germanium

Structural and thermodynamic consideration of metal oxide doped GeO2 for gate stack formation on germanium

Study of surface passivation of strained indium gallium arsenide by vacuum annealing and silane treatment

Structure, energy, and electronic states of vacancies in Ge nanocrystals

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