Germanium electron–hole bilayer tunnel field-effect transistors with a symmetrically arranged double gate

Jeong, Woo Jin; Kim, Tae Kyun; Moon, Jung Min; Park, Min-Gyu; Yoon, Young Gwang; Hwang, Byeong Woon; Choi, Woo Young; Shin, Mincheol; Lee, Seok-Hee

doi:10.1088/0268-1242/30/3/035021

Cited by 11 publications

(8 citation statements)

References 17 publications

(19 reference statements)

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“…[21,24] Recently, ideas of using transverse field to modulate bandgap and then controlling current in electronic devices have been applied successfully. [24,25] It is thus in the push for practical applications, it is desirable to have the ability to modulate the graphene structures functionalities by an external stimulus. In this communication, we propose a generic approach by using electric gates to control of the intriguing properties in zigzag bilayer graphene nanoribbons.…”

Section: Introductionmentioning

confidence: 99%

Electric gating induced bandgaps and enhanced Seebeck effect in zigzag bilayer graphene ribbons

Tran

2016

Semicond. Sci. Technol.

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We theoretically investigate effect of a transverse electric field generated by side gates and a vertical electric field generated by top/back gates on energy bands and transport properties of zigzag bilayer graphene ribbons (Bernal stacking). Using atomistic Tight Binding calculations and Green's function formalism we demonstrate that bandgap is opened when either field is applied and even enlarged under simultaneous influence of the two fields. Interestingly, although vertical electric fields are widely used to control bandgap in bilayer graphene, here we show that transverse fields exhibit more positive effect in terms of modulating a larger range of bandgap and retaining good electrical conductance. Seebeck effect is also demonstrated to be enhanced strongly about 13 times for a zigzag bilayer graphene ribbons with 16 chain lines. These results may motivate new designs of devices made of bilayer graphene ribbons using electric gates.

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Section: Introductionmentioning

confidence: 99%

Electric gating induced bandgaps and enhanced Seebeck effect in zigzag bilayer graphene ribbons

Tran

2016

Semicond. Sci. Technol.

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“…Further, the switching performance parameters are compared between the proposed FBHD-EHBTFET and the conventional doped EHBTFETs, which are listed in table 2. For Si-and Ge-based EHBTFETs [19,24,[43][44][45][46], FBHD-EHBTFET offers excellent performance in all indicators, especially compared to the I on and I on /I off of Si-EHBTFETs as well as the I off and I on /I off of Ge-EHBTFETs. Similarly, FBHD-EHBTFET exhibits superior performance compared with doped InGaAs-based EHBTFET [47].…”

Section: Performance Comparison Of Four Ehbtfetsmentioning

confidence: 99%

A symmetric heterogate dopingless electron-hole bilayer TFET with ferroelectric and barrier layers

Liu,

Zhou,

et al. 2024

Phys. Scr.

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In this paper, a symmetric heterogate dopingless electron–hole bilayer tunnel field-effect transistor with a ferroelectric layer and a dielectric barrier layer (FBHD-EHBTFET) is proposed. FBHD-EHBTFET can not only avoid random doping fluctuation and high thermal budget caused by doping, but also solve the issue that conventional EHBTFETs are unable to use the self-alignment process during device manufacturing. The simultaneous introduction of the symmetric heterogate and dielectric barrier layer can significantly suppress off-state current (I off). Ferroelectric material embedded in the gate dielectric layer can enhance electron tunneling, contributing to improving on-state current (I on) and steepening average subthreshold swing (SS avg). By optimizing various parameters related to the gate, ferroelectric layer, and dielectric barrier layer, FBHD-EHBTFET can obtain the I off of 1.11 × 10–18 A μm−1, SS avg of 12.5 mV/dec, and I on of 2.59 × 10–5 A μm−1. Compared with other symmetric dopingless EHBTFETs, FBHD-EHBTFET can maintain high I on while reducing its I off by up to thirteen orders of magnitude and SS avg by at least 51.2%. Moreover, investigation demonstrates that both interface fixed charge and interface trap can increase I off, degrading the off-state performance of device. The study on FBHD-EHBTFET-based dynamic random access memory shows that it has the high read-to-current ratio of 1.1 × 106, high sense margin of 0.42 μA μm−1, and long retention time greater than 100 ms, demonstrating that it has great potential in low-power applications.

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“…[3][4][5] Researchers have proposed several methods to improve the I on of TFET, such as using low bandgaps and high electron mobility materials in the source region, 6) introducing an N-type heavily doped thin layer at the interface between the source region and the channel, 7) and designing line tunneling (LT) TFET. [8][9][10][11] Among these methods, the electron-hole bilayer tunneling FET (EHBTFET) [12][13][14][15][16][17][18][19][20][21][22][23] has gained development in recent years due to its unique tunneling mechanism, that is, achieving LT based on the electron-hole bilayer induced in the channel. Currently, studies of traditional EHBTFETs mainly focus on lateral EHBTFETs.…”

Section: Introductionmentioning

confidence: 99%

An InGaAs-based Fin-EHBTFET with a heterogate and barrier layer for high performance

Liu,

Li,

Zhou

et al. 2024

Jpn. J. Appl. Phys.

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This paper proposes a fin electron-hole bilayer tunneling field-effect transistor with a heterogate and an InAlAs barrier layer (HBF-EHBTFET). The heterogate can suppress off-state leakage caused by point tunneling, while the InAlAs barrier layer prevents source-drain direct tunneling, significantly reducing off-state current (Ioff). P-type Gaussian doping can not only solve the problem of inability to generate a hole layer during device fabrication, but also reduce the turn-on voltage of line-tunneling, ultimately increasing on-state current and reducing average subthreshold swing (SSavg). By optimizing parameters of the heterogate and InAlAs barrier layer, HBF-EHBTFET can obtain Ioff of 2.37×10-16 A/μm, SSavg of 17.97 mV/dec, cutoff frequency (fT) of 13.2 GHz, and gain bandwidth product (GBW) of 1.58 GHz. Compared with traditional EHBTFET, HBF-EHBTFET exhibits a reduction in Ioff by four orders of magnitude, a decrease in SSavg by 65.27%, and an increase in fT and GBW by 78.59 % and 93.62 %, respectively.

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Germanium electron–hole bilayer tunnel field-effect transistors with a symmetrically arranged double gate

Cited by 11 publications

References 17 publications

Electric gating induced bandgaps and enhanced Seebeck effect in zigzag bilayer graphene ribbons

Electric gating induced bandgaps and enhanced Seebeck effect in zigzag bilayer graphene ribbons

A symmetric heterogate dopingless electron-hole bilayer TFET with ferroelectric and barrier layers

An InGaAs-based Fin-EHBTFET with a heterogate and barrier layer for high performance

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