An InGaAs-based Fin-EHBTFET with a heterogate and barrier layer for high performance
Hu Liu,
Peifeng Li,
Xiaoyu Zhou
et al.
Abstract:This paper proposes a fin electron-hole bilayer tunneling field-effect transistor with a heterogate and an InAlAs barrier layer (HBF-EHBTFET). The heterogate can suppress off-state leakage caused by point tunneling, while the InAlAs barrier layer prevents source-drain direct tunneling, significantly reducing off-state current (Ioff). P-type Gaussian doping can not only solve the problem of inability to generate a hole layer during device fabrication, but also reduce the turn-on voltage of line-tunneling, ultim… Show more
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