Germanium-Doped Gallium Arsenide

Rosztoczy, F.E.; Ermanis, F.; Hayashi, I.; Schwartz, B.

doi:10.1063/1.1658332

Cited by 107 publications

(21 citation statements)

References 18 publications

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“…[57] [131] [429] Large electric fields can also lead to impact ionization of shallow impurities at low temperatures, masking carrier freeze-out [116][2a7][458] [517] and resulting in erroneously shallow activation energies. [57] [131] [429] Large electric fields can also lead to impact ionization of shallow impurities at low temperatures, masking carrier freeze-out [116][2a7][458] [517] and resulting in erroneously shallow activation energies.…”

Section: Hall Effectmentioning

confidence: 99%

Molecular Beam Epitaxy of High-Quality GaAs and AlGaAs

Larkins¹,

Harris²

1995

Molecular Beam Epitaxy

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Section: Hall Effectmentioning

confidence: 99%

Molecular Beam Epitaxy of High-Quality GaAs and AlGaAs

Larkins¹,

Harris²

1995

Molecular Beam Epitaxy

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“…Therefore, at higher temperatures, the scattering of holes will be mainly via LO phonon in the GaAs layers where the mobility is rapidly reduced to a very low value, H ϳ 198 cm −2 / V s at room temperature ͑RT͒, which is close to the reported value of the hole mobility in p-type GaAs epilayer with similar hole concentration. 34,35 In order to show the different temperature regions, we used Matthiessen's rule to obtain the optical phonon scattering limited mobility LO ,…”

Section: Methodsmentioning

confidence: 99%

Energy and momentum relaxation dynamics of hot holes in modulation doped GaInNAs/GaAs quantum wells

Sun

Balkan

2009

Journal of Applied Physics

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We present the studies of energy and momentum relaxation dynamics of nonequilibrium holes in GaxIn1−xNyAs1−y/GaAs quantum well modulation doped with Be. Experimental results show that the real-space transfer (RST) of hot holes occurs via thermionic emission from the high-mobility GaInNAs quantum wells into the low-mobility GaAs barriers at a threshold electric field of F∼6 kV/cm at T=13 K. At this field the hole drift velocity saturates at vd∼1×107 cm/s. A slight increase in the field above the threshold leads to the impact ionization of acceptors in the barriers by the nonequilibrium holes. We observe and model theoretically a negative differential mobility effect induced by RST that occurs at an electric field of F∼7 kV/cm. The observed current surge at electric fields above 7 kV/cm is attributed to the hole multiplication induced by shallow impurity breakdown in the GaAs barrier and impact ionization in the high-field domain regime associated with the packet of RST of holes in the well.

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“…In [62][63][64][65] or Ge, Sn on the anion site, 66,67 those with cation dopants in this case show higher mobilities. Even though GaAs is generally considered a covalent compound, its valence band has more contribution 68 from As states, this aligns again with Ioffe's picture illustrated in Fig.…”

mentioning

confidence: 99%

Higher mobility in bulk semiconductors by separating the dopants from the charge-conducting band – a case study of thermoelectric PbSe

et al. 2015

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In the rigid band approximation dopants in semiconductors only change the Fermi level and carrier concentration such that different dopants are thought equivalent when fully ionized. In this work we examine the small but significant difference in mobility due to the type of dopant in heavily doped PbSe by studying n-type samples doped with Br, In and Bi. We propose that cation and anion dopants lead to a difference in mobility at high concentrations. This can be understood considering the predominance of cation states to the conduction band and anion states to the valence band. For higher mobility and better performance for most applications of heavily doped semiconductors, dopants should be on the site that is of less influence on the chargeconducting band. This concept can be viewed as an analog of modulation doping on the atomic level. Its physical origin is the random potential due to disorder that perturbs carriers, which is also the origin of Anderson localization at low temperature, a well-studied topic in theoretical physics. In thermoelectric PbSe, the selection of dopant can lead to 10% difference in mobility and in zT.

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Germanium-Doped Gallium Arsenide

Cited by 107 publications

References 18 publications

Molecular Beam Epitaxy of High-Quality GaAs and AlGaAs

Molecular Beam Epitaxy of High-Quality GaAs and AlGaAs

Energy and momentum relaxation dynamics of hot holes in modulation doped GaInNAs/GaAs quantum wells

Higher mobility in bulk semiconductors by separating the dopants from the charge-conducting band – a case study of thermoelectric PbSe

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