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Electronic detection of cross-tie/Bloch line pairs is essential for the use of these pairs as data bits in a serial access memory. The physical size of the cross-ties and Bloch lines is small and their associated magnetic flux is weak. Results obtained to date indicate that the detection of cross-tie/Bloch line pairs based on magnetoresistive principles is the most feasible and practical for memory array applications. Three detector designs, fabrication techniques and experimental results are presented. The detectors consist of two gold electrodes 1500 A thick, separated by a small gap. Under the detector is an isotropic or anisotropic NiFe film serration 350 A thick. The gap in the detector is placed on a cross-tie or Bloch line position and is shaped so as to maximize the resistance change in the magnetoresistive film for a "zero" and "one" state. The relationships between sensing current and magnetization distributions are described with the aid of Lorentz electron micrographs. Normal signal levels for the most promising design are in the range of 15-20 /lV/rnA. Sensing currents of 5-6 rnA are used which produce safe current densities, thus typically yielding 100 /l V signals.
Electronic detection of cross-tie/Bloch line pairs is essential for the use of these pairs as data bits in a serial access memory. The physical size of the cross-ties and Bloch lines is small and their associated magnetic flux is weak. Results obtained to date indicate that the detection of cross-tie/Bloch line pairs based on magnetoresistive principles is the most feasible and practical for memory array applications. Three detector designs, fabrication techniques and experimental results are presented. The detectors consist of two gold electrodes 1500 A thick, separated by a small gap. Under the detector is an isotropic or anisotropic NiFe film serration 350 A thick. The gap in the detector is placed on a cross-tie or Bloch line position and is shaped so as to maximize the resistance change in the magnetoresistive film for a "zero" and "one" state. The relationships between sensing current and magnetization distributions are described with the aid of Lorentz electron micrographs. Normal signal levels for the most promising design are in the range of 15-20 /lV/rnA. Sensing currents of 5-6 rnA are used which produce safe current densities, thus typically yielding 100 /l V signals.
The principle, design, fabrication and operating conditions of a shift register memory device using cross-tie wall structure in polycrystalline magnetic films will be described. This device is nonvolatile, silicon compatible and can be fabricated in a three mask level process. Each data track of this device consists of a stripline conductor, a 25 μm wide magnetic film data strip and single level data generator/propagator/detector circuitry. This is the first such device to incorporate a functioning generator, propagate circuit, and detector on a single level, thus greatly simplifying fabrication and increasing reliability and yield. A spatially varying magnetic field produced by the periodic wide/narrow propagate bias stripline is used in conjunction with the magnetic field produced by a uniform stripline to achieve propagation. Propagation is accomplished by generating cross-tie/Bloch line pairs and subsequently annihilating trailing pairs. Cross-tie shift registers have been fabricated on both glass and silicon substrates and have been tested.
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