Geometry dependence on inverse spin Hall effect induced by spin pumping in Ni81Fe19/Pt films

Spin-Hall magnetoresistance in platinum on yttrium iron garnet: Dependence on platinum thickness and in-plane/out-of-plane magnetization

“…11,12 A change in resistance due to SMR can be explained by a combination of the SHE and the ISHE, acting simultaneously. When a charge current J e is sent through a Pt strip, a transverse spin current J s is generated by the SHE following J e ∝ σ × J s , [13][14][15][16] where σ is the polarization direction of the spin current. Part of this created spin current is directed towards the YIG/Pt interface.…”

Systematic variation of spin-orbit coupling withd-orbital filling: Large inverse spin Hall effect in3dtransition metals

“…The ISHE-induced charge current I c = V ISHE /R is proportional to the spin current pumped into Cr [7,15]. Figure 2(i) plots the t Cr dependence of V ISHE /Rw, from which we obtain SD = 13.3 ± 2.1 nm by fitting to ISHE SD tanh C SD [25]. can be obtained from the spin-pumping enhancement of damping [9][10][11][12],…”

Spin Torque Study of the Spin Hall Conductivity and Spin Diffusion Length in Platinum Thin Films with Varying Resistivity

“…Mechanisms which might give rise to the SHE [14,15] include the intrinsic SHE [1,16], side-jump scattering [17] and skew scattering [18]. Two common methods to quantify the strength of the SHE are to employ ferromagnet/normal metal (FM/NM) bilayers and either (1) detect the spin transfer torque that the SHE-induced spin current from the NM layer exerts on the magnetization of the adjacent FM layer [19,20], or (2) use spin pumping to inject a spin current from the FM to the NM and detect the electric current in the NM layer that is induced by the inverse SHE (ISHE) [21][22][23]. In the former case due to spin backflow (SBF) at the FM/NM interface [24,25] and/or enhanced spin scattering at the interface (spin memory loss or SML) [26], only a portion NM|FM [19,[27][28][29][30][31], beta-Ta [19] and beta-W [4].…”