Geometry-Aware Single-Event Enabled Compact Models for Sub-50 nm Partially Depleted Silicon-on-Insulator Technologies

Kauppila, J. S.; Massengill, L.W.; Ball, D. R.; Alles, Michael L.; Schrimpf, Ronald D.; Loveless, T. D.; Maharrey, J. A.; Quinn, R. C.; Rowe, J. D.

doi:10.1109/tns.2015.2443116

Cited by 21 publications

(6 citation statements)

References 18 publications

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“…As shown by TCAD simulations, when the distance between the track and the drain is within a shorter range, the transient current is governed by both diffusion phenomenon and circuit response, characterized by a burst-plateau-type waveform. Kauppila et al have published a bias-dependent single-event modeling method to capture the circuit response and reproduce the plateau effect by a compact device model [7,8,22]. The model adopts the double exponential current source to generate the current induced by ion incident on the drain without circuit response; then models the influences of the circuit response by components implemented in compact device model.…”

Section: Modeling Methods For Both Current Typesmentioning

confidence: 99%

Simulation study and HSPICE modeling of single-event transients induced by secondary ions not incident to the drain in nanoscale CMOS technology

Jin

et al. 2023

Preprint

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Terrestrial single-event transients (SETs) are mainly induced by secondary ions of neutron-induced nuclear reactions, which do not cross the sensitive drain in most cases. Technology computer-aided design (TCAD) simulations show that in those cases, both diffusion-collection current and burst-plateau-type current waveform could occur in nanoscale complementary metal-oxide-semiconductor (CMOS) technology. The necessity of including recombination effect in diffusion-collection model is identified, and an equivalent circuit model (ECM) is established to describe SETs induced by secondary ions with short distance to the drain. Both models are verified by TCAD simulations.

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Section: Modeling Methods For Both Current Typesmentioning

confidence: 99%

Simulation study and HSPICE modeling of single-event transients induced by secondary ions not incident to the drain in nanoscale CMOS technology

Jin

et al. 2023

Preprint

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“…V(P, N) is the bias voltage from P to N. The Fermi model in Equation ( 16) will suppress the node current glitch by G RAD during the reverse biased PN junction glitch. The Fermi energy function, whose expression is shown in Equation (17), where the parameter F determines the slope and range of the current drop, the value of which can be obtained by TCAD simulation [22].…”

Section: Bias-based Set Modelmentioning

confidence: 99%

“…F determines the slope and range of the current drop, the value of which can be obtained by TCAD simulation [22].…”

Section: Incident Angle Dependence Investigationmentioning

confidence: 99%

Investigation of Incident Angle Dependence of Single Event Transient Model in MOSFET

et al. 2023

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As the manufacturing process level of semiconductor devices continues to improve, the device size gradually decreases, and the devices are affected by the single event effect more and more severely. In this paper, the physical process of single particle incident N-channel Metal-Oxide-Semiconductor Field-Effect Transistor (NMOSFET) is simulated. By changing the particle incidence position, incidence angle, LET value, and temperature, the transient current variation with time is obtained, and the susceptibility of the device to single event effect under the action of four factors is analyzed, which provides the basis for the next research of the device against single event effect and ideas for the radiation hardening of semiconductor devices. In addition, in these experiments, there were bimodal-shaped current pulses that were different from single peak transient current pulses. Therefore, a new model describing the bimodal single event transient (SET) current waveform was proposed, which can be used as a current source model in circuit simulation and help to predict the ability of the circuit to resist the single event effect.

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“…В процессе моделирования переходных процессов в КМОП-микросхемах необходимо учитывать одиночные радиационные эффекты (ОРЭ). На качественном уровне большинство физических механизмов, лежащих в основе ОРЭ и определяющих чувст-вительность к ним КМОП-микросхем, изучено достаточно хорошо [7][8][9][10][11][12][13][14][15][16][17][18][19]. Однако из-за вероятностного характера ОРЭ результаты качественного анализа не удается привычным образом конвертировать в стандартные программы электрического моделирования микросхем на элементном уровне, что особенно важно при моделировании аналоговых блоков КМОП-микросхем.…”

Section: Vs Kononov 1 Naunclassified

An Increase of Efficiency in Modeling Transient Processes in CMOS-Microchips Consider-ing Single Radiation Effects

Кононов¹,

Shelepin²

2017

PofUE

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Geometry-Aware Single-Event Enabled Compact Models for Sub-50 nm Partially Depleted Silicon-on-Insulator Technologies

Cited by 21 publications

References 18 publications

Simulation study and HSPICE modeling of single-event transients induced by secondary ions not incident to the drain in nanoscale CMOS technology

Simulation study and HSPICE modeling of single-event transients induced by secondary ions not incident to the drain in nanoscale CMOS technology

Investigation of Incident Angle Dependence of Single Event Transient Model in MOSFET

An Increase of Efficiency in Modeling Transient Processes in CMOS-Microchips Consider-ing Single Radiation Effects

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