Geometry and Thermal Stress Analysis of In-plane Outgassing Channels in Al<sub>2</sub>O<sub>3</sub>-Intermediated InP (Die)-to-Si (Wafer) Bonding

Lin, Yiding; Anantha, P Chandrakasan; Lee, Kwang Hong; Chua, Shen Lin; Shang, Lingru; Tan, Chuan Seng

doi:10.1149/2.0351602jss

Cited by 2 publications

(1 citation statement)

References 29 publications

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“…In previous demonstrations, the uniform doping concentration was employed due to limitations in the thermal budget during fabrication on a III-V-on-insulator (III-V-OI) wafer. [20][21][22] However, recent advancements in the wafer bonding process have allowed us to achieve void-free III-V-OI wafers even after a high-temperature process, enabling ex situ doping processes like ion implantation on a III-V-OI wafer. 23) Therefore, optimizing the doping profile for the IOH modulator holds great significance.…”

Section: Introductionmentioning

confidence: 99%

Numerical evaluation of bandwidth and optical loss in InP-organic hybrid optical modulator with doping optimization

Sakumoto,

Nakayama,

Miyatake

et al. 2024

Jpn. J. Appl. Phys.

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We examine the influence of doping profile optimization on the trade-off relationship between modulation bandwidth and optical loss in an InP-organic hybrid (IOH) optical modulator, comparing it with a Si-organic hybrid (SOH) optical modulator. By incorporating the RF transmission line model, which enables a more precise modulation bandwidth analysis than the RC constant model, we demonstrate that the IOH modulator can achieve a modulation bandwidth of over 500 GHz with a 2 dB loss, capitalizing on the higher electron mobility of InP. In contrast, the SOH modulator cannot attain a 200 GHz modulation bandwidth with acceptable optical loss. Furthermore, we explore the potential for further enhancing the modulation bandwidth of the IOH modulator by shortening its length, making the IOH modulator a promising candidate for future ultra-high-speed optical modulation.

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Section: Introductionmentioning

confidence: 99%

Numerical evaluation of bandwidth and optical loss in InP-organic hybrid optical modulator with doping optimization

Sakumoto,

Nakayama,

Miyatake

et al. 2024

Jpn. J. Appl. Phys.

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Monolithic integration of electro-absorption modulators and photodetectors on III-V CMOS photonics platform by quantum well intermixing

Sekine¹,

Sumita²,

Toprasertpong³

et al. 2022

Opt. Express

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Quantum well intermixing (QWI) on a III-V-on-insulator (III-V-OI) substrate is presented for active-passive integration. Shallow implantation at a high temperature, which is essential for QWI on a III-V-OI substrate, is accomplished by phosphorus molecule ion implantation. As a result, the bandgap wavelength of multi-quantum wells (MQWs) on a III-V-OI substrate is successfully tuned by approximately 80 nm, enabling the monolithic integration of electro-absorption modulators and waveguide photodetectors using a lateral p-i-n junction formed along the InP/MQW/InP rib waveguide. Owing to the III-V-OI structure and the rib waveguide structure, the parasitic capacitance per unit length can be reduced to 0.11 fF/µm, which is suitable for high-speed and low-power modulators and photodetectors. The presented QWI can extend the possibility of a III-V complementary metal-oxide-semiconductor (CMOS) photonics platform for large-scale photonic integrated circuits.

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Geometry and Thermal Stress Analysis of In-plane Outgassing Channels in Al₂O₃-Intermediated InP (Die)-to-Si (Wafer) Bonding

Abstract: Geometry and thermal stress analysis of in-plane outgassing channels in Al2O3-intermediated InP (die)-to-Si (wafer) bonding

Cited by 2 publications

References 29 publications

Numerical evaluation of bandwidth and optical loss in InP-organic hybrid optical modulator with doping optimization

Numerical evaluation of bandwidth and optical loss in InP-organic hybrid optical modulator with doping optimization

Monolithic integration of electro-absorption modulators and photodetectors on III-V CMOS photonics platform by quantum well intermixing

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Geometry and Thermal Stress Analysis of In-plane Outgassing Channels in Al2O3-Intermediated InP (Die)-to-Si (Wafer) Bonding

Abstract: Geometry and thermal stress analysis of in-plane outgassing channels in Al2O3-intermediated InP (die)-to-Si (wafer) bonding

Cited by 2 publications

References 29 publications

Numerical evaluation of bandwidth and optical loss in InP-organic hybrid optical modulator with doping optimization

Numerical evaluation of bandwidth and optical loss in InP-organic hybrid optical modulator with doping optimization

Monolithic integration of electro-absorption modulators and photodetectors on III-V CMOS photonics platform by quantum well intermixing

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Geometry and Thermal Stress Analysis of In-plane Outgassing Channels in Al₂O₃-Intermediated InP (Die)-to-Si (Wafer) Bonding