Monolithic integration of electro-absorption modulators and photodetectors on III-V CMOS photonics platform by quantum well intermixing

Sekine, N.; Sumita, Kei; Toprasertpong, Kasidit; Takagi, Shinichi; Takenaka, Mitsuru

doi:10.1364/oe.462626

Cited by 5 publications

(3 citation statements)

References 43 publications

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“…By replacing the cladding with a low-index dielectric, it is possible to confine light within a nanophotonic membrane with a remarkably slim thickness of only hundreds of nanometers. [111][112][113][114][115][116][117] This approach was pioneered by several groups worldwide in the late 2000s. [118][119][120] Figure 4(a) shows the waveguide cross sections for both a substrate-based InP technology and the membrane InP technology developed at TU Eindhoven.…”

Section: Component Miniaturization With Inp Technology a A Membrane-b...mentioning

confidence: 99%

Scaling photonic integrated circuits with InP technology: A perspective

Wang,

Jiao,

Williams

2024

APL Photonics

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The number of photonic components integrated into the same circuit is approaching one million, but so far, this has been without the large-scale integration of active components: lasers, amplifiers, and high-speed modulators. Emerging applications in communication, sensing, and computing sectors will benefit from the functionality gained with high-density active–passive integration. Indium phosphide offers the richest possible combinations of active components, but in the past decade, their pace of integration scaling has not kept up with passive components realized in silicon. In this work, we offer a perspective for functional scaling of photonic integrated circuits with actives and passives on InP platforms, in the axes of component miniaturization, areal optimization, and wafer size scaling.

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Section: Component Miniaturization With Inp Technology a A Membrane-b...mentioning

confidence: 99%

Scaling photonic integrated circuits with InP technology: A perspective

Wang,

Jiao,

Williams

2024

APL Photonics

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“…Like a Si rib waveguide, an InGaAsP rib waveguide can be fabricated on a III-V on insulator (III-V-OI) wafer manufacturable from the wafer bonding of a III-V bulk wafer and a thermally oxidized Si wafer. 29) When a positive gate voltage is applied, electrons accumulated at the InGaAsP/SiO 2 interface. Electron accumulation in InGaAsP induces the refractive index change, resulting in optical phase modulation.…”

Section: Device Concept and Structurementioning

confidence: 99%

Efficient optical phase modulator based on an III–V metal-oxide-semiconductor structure with a doped graphene transparent electrode

Piyapatarakul

Tang

Toprasertpong

et al. 2022

Jpn. J. Appl. Phys.

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We propose a III–V metal-oxide-semiconductor (MOS) optical modulator with graphene gate electrode along with the analysis of the modulation properties.　With p-type doped graphene used as a transparent gate electrode, we can fully utilize the electron-induced refractive index change in an n-type InGaAsP waveguide with the reduction of the hole-induced optical absorption observed in a III–V/Si hybrid MOS optical modulator. Numerical analysis displays that up to the phase modulation efficiency of 0.82 V·cm and 0.22 dB optical loss for π phase shift can be achieved when the gate oxide thickness is 100 nm. With the elimination of the unnecessary parasitic capacitance found in the overlapping of graphene on the slab part of the waveguide, in conjunction with the high electron mobility in InGaAsP, the device also enables a modulation bandwidth of greater than 200 GHz.

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“…[20][21][22] However, recent advancements in the wafer bonding process have allowed us to achieve void-free III-V-OI wafers even after a high-temperature process, enabling ex situ doping processes like ion implantation on a III-V-OI wafer. 23) Therefore, optimizing the doping profile for the IOH modulator holds great significance. The accurate evaluation of the modulation bandwidth is also important.…”

Section: Introductionmentioning

confidence: 99%

Numerical evaluation of bandwidth and optical loss in InP-organic hybrid optical modulator with doping optimization

Sakumoto,

Nakayama,

Miyatake

et al. 2024

Jpn. J. Appl. Phys.

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We examine the influence of doping profile optimization on the trade-off relationship between modulation bandwidth and optical loss in an InP-organic hybrid (IOH) optical modulator, comparing it with a Si-organic hybrid (SOH) optical modulator. By incorporating the RF transmission line model, which enables a more precise modulation bandwidth analysis than the RC constant model, we demonstrate that the IOH modulator can achieve a modulation bandwidth of over 500 GHz with a 2 dB loss, capitalizing on the higher electron mobility of InP. In contrast, the SOH modulator cannot attain a 200 GHz modulation bandwidth with acceptable optical loss. Furthermore, we explore the potential for further enhancing the modulation bandwidth of the IOH modulator by shortening its length, making the IOH modulator a promising candidate for future ultra-high-speed optical modulation.

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Monolithic integration of electro-absorption modulators and photodetectors on III-V CMOS photonics platform by quantum well intermixing

Cited by 5 publications

References 43 publications

Scaling photonic integrated circuits with InP technology: A perspective

Scaling photonic integrated circuits with InP technology: A perspective

Efficient optical phase modulator based on an III–V metal-oxide-semiconductor structure with a doped graphene transparent electrode

Numerical evaluation of bandwidth and optical loss in InP-organic hybrid optical modulator with doping optimization

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