In this work, we investigate thermoelectric properties of junctions consisting of two partially overlapped graphene sheets coupled to each other in the cross-plane direction. It is shown that because of the weak van-der Waals interactions between graphene layers, the phonon conductance in these junctions is strongly reduced, compared to that of single graphene layer structures, while their electrical performance is weakly affected. By exploiting this effect, we demonstrate that the thermoelectric figure of merit can reach values higher than 1 at room temperature in junctions made of gapped graphene materials, for instance, graphene nanoribbons and graphene nanomeshes. The dependence of thermoelectric properties on the junction length is also discussed. This theoretical study hence suggests an efficient way to enhance thermoelectric efficiency of graphene devices.PACS numbers: xx.xx.xx, yy.yy.yy, zz.zz.zzThe thermoelectric effect enables direct conversion of a temperature difference into an electric voltage and vice versa, and provides a viable route for electrical power generation from waste heat. The efficiency of thermoelectric conversion is determined by the dimensionless figure of merit, ZT , which is given bywhere G e is the electrical conductance, S is the Seebeck coefficient, and κ e,p is the thermal conductance contributed by charged carriers and lattice vibrations (phonons), respectively. For conventional materials, these transport coefficients are not independent and it is usually difficult to greatly improve their thermoelectric performance. In principle, to achieve a high ZT , it is simultaneously needed to suppress thermal conductance while keeping G e and S less affected. Some efficient approaches [1,2] have been suggested to guide thermoelectrics studies. They are mainly based on the use of low dimensional materials and/or nanostructuring as, for instance, thin films [3], quantum dot supperlattices [4], and silicon nanowires [5,6]. Graphene, a 2D mono-layer material, is expected to become one of the next generation electronic materials because of its outstanding properties such as high electron mobility [7] and high thermal conductivity [8,9]. Interestingly, the two above-mentioned approaches can be naturally combined in graphene nanostructures for better thermoelectric applications. For achieving large ZT in graphene systems, two important disadvantages have to be overcome: (i) S is too small due to the gapless character of graphene and (ii) κ p is too high. Many studies to improve thermoelectric properties of graphene with different strategies of * E-mail: hung@iop.vast.ac.vn nanostructuring have been suggested. In particular, it has been shown that the Seebeck effect can be significantly enhanced in graphene nanostructures having finite energy gaps such as graphene armchair nanoribbons (GNRs) [10], graphene nano-hole (nanomesh, i.e. GNM) lattices [11], hybrid graphene/boron nitride structures [12], graphene nanoribbons with a nanopore array [13], graphene nanoribbons consisting of alternate zig...