“…In general, the spin resistance of FM is defined as 2 /[ S (1 − )] [ 30 , 32 ], where S is the effective cross-sectional area, is the spin polarization, and and are the spin diffusion length and resistivity, respectively. Owing to the unique values of , , and in FM, reducing the size of S enables the increase in the spin resistance of FM, resulting in the suppression of the back flows of spins from NM towards FM [ 32 , 33 , 34 ]. Yang et al demonstrated the generation of a giant pure spin current, leading to the magnetization switching of the nanomagnet by reducing the FM/NM junction size [ 33 ].…”