Generation-recombination noise in Cd0.21Hg0.79Te

Andrukhiv, M. G.; Ivanov-Omskiĭ, V. I.; Ogorodnikov, V. K.

doi:10.1016/0020-0891(80)90054-8

Cited by 10 publications

(8 citation statements)

References 7 publications

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“…For MCT sensitive layers the typical noises are: Jonson-Nyquist noise, generation-recombination (G-R) noise, and photon shot noise (field of view FOV = 180 0 ) accounting of which is important at low temperatures for photoconductors. As a rule, when MCT photoconducting detectors are biased the G-R noise prevails over all other noises [9]. Johnson-Nyquist noise is sufficiently smaller in dependence of sample resistance and bias applied.…”

Section: Experimenal Results and Discussionmentioning

confidence: 99%

MCT as sub-terahertz and infrared detector

Sizov

Zabudsky

Dvoretsky

et al. 2015

Terahertz Physics, Devices, and Systems IX: Advanced Applications in Industry and Defense

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Development of infrared and sub-terahertz radiation detectors at the same sensitive elements on the base of mercurycadmium-telluride (MCT) is reported. Two-color un-cooled and cooled to 78 K narrow-gap MCT semiconductor thin layers, grown by liquid phase epitaxy or molecular beam epitaxy method on high resistivity CdZnTe or GaAs substrates, with bow-type antennas were considered both as sub-terahertz direct detection bolometers and 3 to 10 μm infrared photoconductors. Their room temperature noise equivalent power (NEP) at frequency ~ 140 GHz and signal-to-noise ratio (S/N) in the spectral sensitivity maximum under the monochromatic (spectral resolution of ~0.1 μm) globar illumination were reached NEP ~4.5*10 -10 W/Hz 1/2 and S/N~50, respectively.

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Section: Experimenal Results and Discussionmentioning

confidence: 99%

MCT as sub-terahertz and infrared detector

Sizov

Zabudsky

Dvoretsky

et al. 2015

Terahertz Physics, Devices, and Systems IX: Advanced Applications in Industry and Defense

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“…[2][3][4] Therefore, investigations are focused mainly on the determination of noise sources and other contributions to the whole noise of the final devices, such as long-wavelength infrared detectors. [2][3][4] Therefore, investigations are focused mainly on the determination of noise sources and other contributions to the whole noise of the final devices, such as long-wavelength infrared detectors.…”

Section: Introductionmentioning

confidence: 99%

“…These experimental data were discussed in light of three theoretical models of 1/f noise: McWhorter, 12 Hooge, 13 and Handel. 3,4 In addition, the noise consists of a series of nonregular pulses, so-called explosive noise, which may be imposed on the low-frequency noise spectrum. The different dark currents, as well as the states at interface Hg 1Ϫx Cd x Te/passivation layer contribute seriously to the noise.…”

Section: Introductionmentioning

confidence: 99%

Noise properties of linear defects in Hg1−xCdxTe

Virt¹,

Obermayr

Bilyk³

et al. 2002

Journal of Elec Materi

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“…As a rule, when MCT photoconducting detectors are biased, the G-R noise prevails over all other noises. 17 Johnson-Nyquist noise is sufficiently lower in the dependence on the sample resistance and bias applied.…”

mentioning

confidence: 97%