Generation of vacancy-type point defects in single collision cascades during swift-ion bombardment of silicon

Annealing kinetics of vacancy-related defects in low-dose MeV self-ion-implantedn-type silicon

“…This interpretation is qualitatively supported by computer simulations of the defect reaction kinetics assuming a model where the interaction between single-collision cascades, in the dilute limit, is primarily due to fast-diffusing silicon selfinterstitials ͑I͒. 11,13,15,16 A subject closely related to the generation of defects is their evolution during post-irradiation annealing. A rather complex scenario then appears, in which the defects can dissociate, migrate to annihilation sinks, interact with each other or with impurities, etc.…”

“…, the generation of V 2 centers per ion-induced vacancy in the damage peak region is identical, within Ϯ10%, for different kinds of ions ranging from 11 B to 120 Sn ͑this may hold for an even wider range of ions but to the best of our knowledge no such data exist in the literature͒. In contrast, the VO center shows a decrease in the generation rate per ion-induced vacancy with increasing ion mass, consistent with the picture from molecular-dynamics simulations suggesting that light ions are more effective than heavy ions in generating point defects.…”

“…However, for ion implantation only a few quantitative studies of the point-defect generation exist, [9][10][11][12][13] and the defects primarily investigated are the divacancy (V 2 ) and vacancy-oxygen ͑VO͒ centers. V 2 and VO are the most prominent vacancy-related defects in silicon after low-dose ion bombardment at room temperature ͑RT͒ and their formation has been studied as a function of ion mass, dose, dose rate, sample depth, and implantation temperature.…”

Visualization of MeV ion impacts in Si using scanning capacitance microscopy

“…a surface). In fact, only a few percentage of the generated vacancies and interstitials escape mutual recombination [8]. From the surviving V and I, a complex hierarchy of competing reaction involving both interstitials and vacancies will evolve, resulting in secondary defects.…”

Deep electronic states in ion-implanted Si

“…{311 defects} and end-ofrange dislocation loops, are believed to be the reason for TED in silicon, as B is an interstitial-assisted diffuser. Modelling of the formation of {311} defects shows preferential cluster sizes during the ripening of these extended defects [1], and it has been possible to identify these precursor clusters experimentally by electrical characterisation [2][3][4][5]. The problem of TED is now receding as the fabrication process either employs very low energies to form the critical areas, which produce very few extra interstitials, or introduces very rapid anneal schedules.…”