Generation of RF plasma assisted high power pulsed sputtering glow discharge without using a magnetic field

Yukimura, Ken; Ehiasarian, Arutiun P.

doi:10.1016/j.nimb.2009.01.110

Cited by 24 publications

(16 citation statements)

References 5 publications

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“…By substituting ( + + + ) with n e in equation ( 6) and inserting in equation ( 5) it can be concluded that ∝ 2 (8). Following from equations ( 4) and ( 8) for metal neutrals we can conclude that ~ ( ) 2 (9). From this follows that for Ni neutrals in a logarithmic scale the slope ß is twice as steep as for Ar neutrals: log( 0 )~2 log (10).…”

Section: Modelling Of the Excitation Propertiesmentioning

confidence: 81%

“…Inductively Coupled Impulse Sputtering (ICIS) is a new development which aims to solve the previously mentioned issues by eliminating the need for a magnetron. ICIS is based on an experimental development by Yukimura and Ehiasarian [9], which utilises high pulsed RF-power in the coil and high pulsed DC voltage on the target to generate dense plasma and attract argon ions (Ar 1+ ) to initiate sputtering. In previous work the RF -plasma assisted high power pulsed glow discharge was adapted to work inside a deposition system and uses a 13.56 MHz RF-power supply to create the basis for a practical application of ICIS technology [10].…”

Section: Introductionmentioning

confidence: 99%

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Nickel coatings by Inductively Coupled Impulse Sputtering (ICIS)

Loch

Gonzalvo

Ehiasarian

2015

Surface and Coatings Technology

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Section: Modelling Of the Excitation Propertiesmentioning

confidence: 81%

Section: Introductionmentioning

confidence: 99%

Nickel coatings by Inductively Coupled Impulse Sputtering (ICIS)

Loch

Gonzalvo

Ehiasarian

2015

Surface and Coatings Technology

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“…By substituting ( + + + ) with n e in equation (6) and inserting in equation (5) it can be concluded that ∝ 2 (8). Following from equations (4) and (8) for metal neutrals we can conclude that ~ ( ) 2 (9). From this follows that for Ni neutrals in a logarithmic scale the slope ß is twice as steep as for Ar neutrals: log( 0 )~2 log (10).…”

Section: Modelling Of the Excitation Propertiesmentioning

confidence: 83%

Nickel Coatings by Inductively Coupled Impulse Sputtering (ICIS)

Loch¹,

Ehiasarian²

2014

Annual Technical Conference Proceedings

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Inductively Coupled Impulse Sputtering (ICIS) removes the need for a magnetron, while delivering equal or higher ion-to-neutral ratios compared to other ionised PVD technologies such as High Power Impulse Magnetron Sputtering (HIPIMS). This is especially advantageous for the sputtering of magnetic materials, as these would shunt the magnetic field of the magnetron, thus reducing the efficiency of the sputtering and ionisation process. ICIS produces highly ionised metal-dominated plasma inside a high power pulsed RF-coil with a magnet free high voltage pulsed DC powered cathode. ICIS operation with magnetic target materials has not been attempted so far. The paper aims to clarify the effects of power and pressure on the chemistry of the deposition flux and is the first investigation of the microstructure of ICIS deposited coatings. Modelling based on the intensity of the optical emission spectra (OES) is conducted for the first time on the excited species of Ni and Ar in relation to the applied RF-power. Sputtered species show a linear intensity increase for increasing peak RF-power and constant process gas pressure. The influence of increasing process gas pressure on the ionisation was studied at a constant peak RFpower for pressures. For pressures below 8 Pa the intensity rises, but then remains constant for pressures up to 26 Pa. The microstructure of Ni coatings shows columnar dendritic or globular growth depending on the ionisation degree. In relation to the film thickness on the top of the substrate, the bottom coverage of unbiased vias with an aspect ratio of 4:1 was 15% and for lower aspect ratios of 1.5:1 was 47.5%. The current work has shown that the concept of combining a pulsed RF driven coil with a magnet-free pulsed DC powered cathode works well for the sputtering of magnetic material in a stable plasma.

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“…A new ICP system using burst waves has been developed [ 11 , 12 , 13 , 14 , 15 , 16 , 17 ]. In this system, the frequency is set to 100–200 kHz, which is not necessary for the impedance matching circuit required in conventional ICP systems, and the resonance between the ICP inductance and the parallel capacitance produces high-density plasma of the order of 10 19 m −3 [ 12 , 13 , 14 , 15 , 16 , 17 ]. Therefore, this ICP system has the advantage of a simple equipment configuration.…”

Section: Introductionmentioning

confidence: 99%

Silicon Wafer Etching Rate Characteristics with Burst Width Using 150 kHz Band High-Power Burst Inductively Coupled Plasma

et al. 2021

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The high-speed etching of a silicon wafer was experimentally investigated, focusing on the duty factor of 150 kHz band high-power burst inductively coupled plasma. The pulse burst width was varied in the range of 400–1000 µs and the repetition rate was set to 10 Hz. A mixture of argon (Ar) and carbon tetrafluoride (CF4) gas was used as the etching gas and injected into the vacuum chamber. The impedance was changed with time, and the coil voltage and current were changed to follow it. During the discharge, about 3 kW of power was applied. The electron temperature and plasma density were measured by the double probe method. The plasma density in the etching region was 1018–1019 m−3. The target current increased with t burst width. The etching rate of Ar discharge at burst width of 1000 µs was 0.005 µm/min. Adding CF4 into Ar, the etching rate became 0.05 µm/min, which was about 10 times higher. The etching rate increased with burst width.

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Generation of RF plasma assisted high power pulsed sputtering glow discharge without using a magnetic field

Cited by 24 publications

References 5 publications

Nickel coatings by Inductively Coupled Impulse Sputtering (ICIS)

Nickel coatings by Inductively Coupled Impulse Sputtering (ICIS)

Nickel Coatings by Inductively Coupled Impulse Sputtering (ICIS)

Silicon Wafer Etching Rate Characteristics with Burst Width Using 150 kHz Band High-Power Burst Inductively Coupled Plasma

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