Nickel coatings by Inductively Coupled Impulse Sputtering (ICIS)

Loch, Daniel A.L.; Gonzalvo, Yolanda Aranda; Ehiasarian, Arutiun P.

doi:10.1016/j.surfcoat.2014.11.029

Cited by 7 publications

(3 citation statements)

References 19 publications

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“…The comparison of Ti and Ni OES results with the model shows that these materials adhere very well to the expected result. As has been discussed in more detail in Loch et al [22], in a log-log graph, the slope for metal neutrals is twice as steep as the gas slope and for metal ions it is three times as steep.…”

Section: Discussionmentioning

confidence: 83%

Plasma analysis of inductively coupled impulse sputtering of Cu, Ti and Ni

Loch

Gonzalvo

Ehiasarian

2017

Plasma Sources Sci. Technol.

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Inductively coupled impulse sputtering (ICIS) is a new development in the field of highly ionised pulsed PVD processes. For ICIS the plasma is generated by an internal inductive coil, replacing the need for a magnetron. To understand the plasma properties, measurements of the current and voltage waveforms at the cathode were conducted. The ion energy distribution functions (IEDFs) were measured by energy resolved MS and plasma chemistry was analysed by OES and then compared to a model. The target was operated in pulsed DC mode and the coil was energised by pulsed RF power, with a duty cycle of 7.5%. At a constant pressure (14 Pa) the set peak RF power was varied from 1000-4000 W. The DC voltage to the target was kept constant at 1900 V. OES measurements have shown a monotonic increase in intensity with increasing power. Excitation and ionisation processes were single step for ICIS of Ti and Ni and multi-step for Cu. The latter exhibited an unexpectedly steep rise in ionisation efficiency with power. The IEDFs measured by MS show the material-and time-dependant plasma potential in the range of 10-30 eV, ideal for increased surface mobility without inducing lattice defects. A lower intensity peak, of high energetic ions, is visible at 170 eV during the pulse.

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Section: Discussionmentioning

confidence: 83%

Plasma analysis of inductively coupled impulse sputtering of Cu, Ti and Ni

Loch

Gonzalvo

Ehiasarian

2017

Plasma Sources Sci. Technol.

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“…The magnetic field strength above the surface of the target is attenuated, resulting in difficulty initiating and sustaining a glow discharge [10]. Magnetron sputtering technology employs various approaches to overcome these obstacles, such as using additional sources of plasma excitation [11][12][13], thin targets [14], and particular magnetic field configuration [15,16]. Although the mentioned methods have undoubted advantages, they are not ideal, and new solutions are still being sought.…”

Section: Introductionmentioning

confidence: 99%

On the Control of Hot Nickel Target Magnetron Sputtering by Distribution of Power Pulses

et al. 2022

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This paper presents the experimental results of high-temperature sputtering of nickel targets by the Gas Injection Magnetron Sputtering (GIMS) technique. The GIMS technique is a pulsed magnetron sputtering technique that involves the generation of plasma pulses by injecting small doses of gas into the zone of the magnetron target surface. Using a target with a dedicated construction to limit heat dissipation and the proper use of injection parameters and electrical power density, the temperature of the target during sputtering can be precisely controlled. This feature of the GIMS technique was used in an experiment with sputtering nickel targets of varying thicknesses and temperatures. Plasma emission spectra and current-voltage waveforms were studied to characterize the plasma process. The thickness, structure, phase composition, and crystallite size of the nickel layers produced on silicon substrates were investigated. Our experiment showed that although the most significant increase in growth kinetics was observed for high temperatures, the low sputtering temperature range may be the most interesting from a practical perspective. The excited plasma has the highest energy in the sputtering temperature range, just above the Curie temperature.

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“…Since ferromagnetic thin films are widely used in industrial applications [2,3], a number of magnetron configurations have been proposed that deposit at an acceptable deposition rate [4][5][6][7]. However, the planar Penning trapping configuration [8] is of particular interest here.…”

Section: Introductionmentioning

confidence: 99%

An Inverted Magnetron Operating in HiPIMS Mode

Poolcharuansin

Chingsungnoen

Pasaja

et al. 2018

Plasma

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An ionized physical vapor deposition technique for thin ferromagnetic films is proposed. The technique is based on high power impulse magnetron sputtering (HiPIMS) with positive discharge polarity. A gapped-target was employed as the cathode of the magnetron. By applying positive HiPIMS pulses to the anode, sputtered particles inside the magnetron source were ionized and extracted through the gap. Using a discharge current with a peak of about 13 A, an ion flux in the order of 1021 m−2s−1 was obtained at a distance of 45 mm from the magnetron. In addition, deposition rates of up to 1.1 Å/s for nickel films were achieved using a 30 Hz repetition rate and 300 µs pulse width.

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Nickel coatings by Inductively Coupled Impulse Sputtering (ICIS)

Cited by 7 publications

References 19 publications

Plasma analysis of inductively coupled impulse sputtering of Cu, Ti and Ni

Plasma analysis of inductively coupled impulse sputtering of Cu, Ti and Ni

On the Control of Hot Nickel Target Magnetron Sputtering by Distribution of Power Pulses

An Inverted Magnetron Operating in HiPIMS Mode

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