Generation of picosecond blue light pulse by frequency doubling of gain-switched GaAlAs laser diode having saturable absorber

Ohya, Jun; Tohmon, G.; Yamamoto, Kazuhisa; Taniuchi, T.; Kume, M.

doi:10.1109/3.83415

Cited by 11 publications

(4 citation statements)

References 26 publications

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“…Including a saturable absorber in the laser cavity can increase pulse power. For example, Ohya et al achieved a peak power of 1.2 W with 29 ps gain-switched pulses [108].…”

Section: Experimental Results: Pulse Width Peak Power Timing Jittermentioning

confidence: 99%

Fast phenomena in semiconductor lasers

2000

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Although diode lasers are almost ideal sources for ultrahigh-speed data communication systems, system performance remains critically dependent on the quality of the optical pulses that they generate. Uniquely among lasers, the output power can be modulated directly by modulating the diode current. However, this leads to relaxation oscillations and a roll-off at high frequencies that is superimposed on the frequency response of the drive circuit. This is limited by parasitics and maximum modulation frequencies range from 1 to 70 GHz, depending on the type of laser and its packaging. The higher values are obtained with short cavity lengths and tight optical confinement, the highest frequencies being achieved in vertical-cavity devices. Modulation bandwidth is usually limited by circuit parasitics, device heating and the maximum power-handling capability of the laser facets.The generation of picosecond and femtosecond pulses demands special techniques and three-gain switching, Q-switching and mode locking-are discussed in detail, with their relative advantages and disadvantages compared. Very short pulses inherently contain a significant spread of wavelengths and their generation requires the optical gain in the laser medium to extend across that wavelength range. While diode lasers satisfy this criterion better than many other types, the effect of gain non-linearities and carrier-transport effects prevent the Fourier-transform limit from being achieved in practice. As a result, external pulse-compression techniques, which exploit the detailed temporal and spectral properties of the laser pulses, such as frequency chirping, self-phase modulation and group velocity dispersion, are becoming more important, and diode lasers are increasingly challenged as primary sources by compact, efficient, diode-pumped solid-state lasers.The paper summarizes the levels of maximum pulse power and minimum duration that have been achieved using the various techniques.

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“…Including a saturable absorber in the laser cavity can increase pulse power. For example, Ohya et al achieved a peak power of 1.2 W with 29 ps gain-switched pulses [108].…”

Section: Experimental Results: Pulse Width Peak Power Timing Jittermentioning

confidence: 99%

Fast phenomena in semiconductor lasers

2000

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“…The diode is operated at room temperature and exhibits uncomplicated pumping requirements, namely nanosecond-range current pulses. 11 10 One likely additional reason for the good pulse quality observed in the present work is the following.…”

Section: Discussionmentioning

confidence: 84%

Single-heterostructure laser diode producing a <inline-formula><math display="inline" overflow="scroll"><mrow><mn mathvariant="bold">6</mn><mrow><mtext> </mtext><mtext> </mtext><mi mathvariant="normal">W</mi></mrow><mo>/</mo><mn mathvariant="bold">40</mn><mtext> </mtext><mtext> </mtext><mi>ps</mi></mrow></math></inline-formula> optical pulse from a <

et al. 2012

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A compact, low-cost semiconductor laser diode producing 40 ps full width at half maximum (FWHM) singlespike lasing pulses with 6 Watts peak power from a 20 μm stripe width is realized in the form of a simple singleheterostructure, grown by metal-organic chemical vapor deposition. The structure possesses a linearly graded doping profile extending from the p þ and n þ sides towards the p-n junction. This laser diode is operated under room temperature conditions and applies pumping current pulses (roughly 10 to 20 A∕2 to 3 ns FWHM) achievable with a commercially available silicon avalanche transistor as an electrical switch. © 2012 Society of Photo-Optical Instrumentation Engineers (SPIE).

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“…There have been previous reports [11][12][13][14] of combining gain-switching and passive Q-switching in high-power lasers, in which the introduction of a saturable absorber allowed the picosecond pulse energy to be substantially increased compared to purely gain-switched operation. Both bulk and quantum well active layer lasers can be used in principle.…”

Section: Introductionmentioning

confidence: 99%

Laser diode structures with a saturable absorber for high-energy picosecond optical pulse generation by combined gain-and Q-switching

Ryvkin

Avrutin

Kostamovaara

et al. 2017

Semicond. Sci. Technol.

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The performance of gain-switched Fabry-Perot asymmetric-waveguide semiconductor lasers with a large equivalent spot size and an intracavity saturable absorber was investigated experimentally and theoretically. The laser with a short (~ 20 m) absorber emitted highenergy afterpulse-free optical pulses in a broad range of injection current pulse amplitudes; optical pulses with a peak power of about 35 W and a duration of about 80 ps at half maximum were achieved with a current pulse with an amplitude of just 8 A and a duration of 1.5 ns. Good quality pulsations were observed in a broad range of elevated temperatures. The introduction of a substantially longer absorber section lead to strong spectral broadening of the output without a significant improvement to pulse energy and peak power. Introduction: Picosecond-range (~100 ps) high energy optical pulse generation with semiconductor lasers has attracted significant attention recently, with a view for obtaining compact optical sources for applications such as high-precision laser radars (the most immediate intended application in our studies) three-dimensional (3-D) time imaging, spectroscopy and lifetime studies. Pulses of such duration, or shorter, have been reported by a large number of authors since the early days of laser diode technology (see e.g. [1,2] for an overview). The main techniques used are gain switching (pumping the laser with a current pulse of a nanosecond duration or somewhat shorter, but still significantly longer than the desired optical pulse), active or passive Q-switching (using a laser incorporating an active voltage-controlled modulator or a saturable absorber respectively), or a combination of these techniques. The general principles of all these regimes have been relatively well understood

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Generation of picosecond blue light pulse by frequency doubling of gain-switched GaAlAs laser diode having saturable absorber

Cited by 11 publications

References 26 publications

Fast phenomena in semiconductor lasers

Fast phenomena in semiconductor lasers

Laser diode structures with a saturable absorber for high-energy picosecond optical pulse generation by combined gain-and Q-switching

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