Single-heterostructure laser diode producing a <inline-formula><math display="inline" overflow="scroll"><mrow><mn mathvariant="bold">6</mn><mrow><mtext> </mtext><mtext> </mtext><mi mathvariant="normal">W</mi></mrow><mo>/</mo><mn mathvariant="bold">40</mn><mtext> </mtext><mtext> </mtext><mi>ps</mi></mrow></math></inline-formula> optical pulse from a <

Abstract

A compact, low-cost semiconductor laser diode producing 40 ps full width at half maximum (FWHM) singlespike lasing pulses with 6 Watts peak power from a 20 μm stripe width is realized in the form of a simple singleheterostructure, grown by metal-organic chemical vapor deposition. The structure possesses a linearly graded doping profile extending from the p þ and n þ sides towards the p-n junction. This laser diode is operated under room temperature conditions and applies pumping current pulses (roughly 10 to 20 A∕2 to 3 ns FWHM) achievable with a commercially available silicon avalanche transistor as an electrical switch. © 2012 Society of Photo-Optical Instrumentation Engineers (SPIE).