2017
DOI: 10.1088/1612-202x/aa9318
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Generation of isolated attosecond pulses by polarization gating of high-order harmonic emission from $\boldsymbol {\rm H_2^+}$ in intense ultrashort laser fields

Abstract: Quantum-mechanical investigation is presented to study single attosecond pulse generation by gating high-order harmonic emission from H + 2 molecule in intense laser pulses with time-dependent ellipticity. The high-order harmonic generation from H + 2 molecule in superposition of a left and a right-hand circularly polarized Gaussian pulse is studied and the effect of time duration and carrierenvelope phase of laser field on single attosecond pulse generation is investigated. Using laser field formed by combina… Show more

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Cited by 6 publications
(13 citation statements)
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“…Having computed x‐ or y‐component of dipole acceleration a x ( y ) via Equation (), the profile of the attosecond pulse for each direction is obtainable superposing different harmonics orders 62 Ixyt=axyqeitaliciqωt2 where axyq=ax()y()teitaliciqwtnormaldt. The time‐frequency profiles of the high harmonics w ( ω , t ) are also obtained via a Morlet wavelet transform of the time‐dependent dipole acceleration w(),ωt=ωπ12σa()teitaliciω()tteω2tt22σ2dt where we set the Gaussian width σ = 2 π in this work.…”
Section: Resultsmentioning
confidence: 99%
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“…Having computed x‐ or y‐component of dipole acceleration a x ( y ) via Equation (), the profile of the attosecond pulse for each direction is obtainable superposing different harmonics orders 62 Ixyt=axyqeitaliciqωt2 where axyq=ax()y()teitaliciqwtnormaldt. The time‐frequency profiles of the high harmonics w ( ω , t ) are also obtained via a Morlet wavelet transform of the time‐dependent dipole acceleration w(),ωt=ωπ12σa()teitaliciω()tteω2tt22σ2dt where we set the Gaussian width σ = 2 π in this work.…”
Section: Resultsmentioning
confidence: 99%
“…and the intensity of I = 3 Â 10 14 W/cm 2 for ϕ = 0 and ϕ = π/2 similar to. 62 In Figure 6, we have illustrated the SAP achieved from SCS approach using polarization gating technique for carrier envelope phase ϕ = 0 (left panel) and ϕ = π/2 (right panel). The simulation results in Figure 6 obtained by averaging the expectation value of the acceleration of the single electron along x and y directions over 40 different random simulations (each contains a total number of 12,000 CSs = 3000 internal CSs + 9000 external CSs).…”
Section: Sap Generationmentioning
confidence: 99%
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“…This approach is implementable for simulating systems with a limited number of particles in a limited region of momentum or coordinate space. There are different TDSE approaches for simulating the electron dynamics in an atomic or molecular laser-induced system in one, two, or three (full) coordinate (or momentum) dimensions [8][9][10][11][12][13][14][15][16][17][18][19][20][21][22]. Some of the TDSE approaches treat the nuclei in the laser-induced system dynamically using classical or quantum mechanics.…”
Section: Introductionmentioning
confidence: 99%