Generation of Charged SiC Nanoparticles During HWCVD Process

Kim, Da-Seul; Kim, Du Yun; Kwon, Ji Hye; Kim, Kun-Su; Hwang, Nong‐Moon

doi:10.1007/s13391-020-00230-3

Cited by 11 publications

(6 citation statements)

References 29 publications

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“…In our previous study, the size of SiC nanoparticles increased with increasing process time [33]. When additional bias of −50 V was applied to the hot wires at a gas ratio of (SiH4 + CH4)/H2 of 0.01, the initial size of the nanoparticles was small enough to accommodate their structure to the structure of the substrates.…”

Section: Resultsmentioning

confidence: 85%

“…Considering all of the results in Figures 3-7, the size of the CNPs as well as the substrate temperature are important factors of the crystallinity of films. In our previous study, the size of SiC nanoparticles increased with increasing process time [33]. When additional bias of −50 V was applied to the hot wires at a gas ratio of (SiH 4 + CH 4 )/H 2 of 0.01, the initial size of the nanoparticles was small enough to accommodate their structure to the structure of the substrates.…”

Section: Resultsmentioning

confidence: 85%

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Effects of the Size of Charged Nanoparticles on the Crystallinity of SiC Films Prepared by Hot Wire Chemical Vapor Deposition

Kim

Kwon

et al. 2020

Coatings

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Non-classical crystallization suggests that crystals can grow with nanoparticles as a building block. In this case, the crystallization behavior depends on the size and charge of the nanoparticles. If charged nanoparticles (CNPs) are small enough, they become liquid-like and tend to undergo epitaxial recrystallization. Here, the size effect of SiC CNPs on film crystallinity was studied in the hot-wire chemical vapor deposition process. To do this, SiC nanoparticles were captured under different processing conditions—in this case, wire temperature, precursor concentration and the filament bias. Increasing the temperature of tungsten wires and decreasing the ratio of (SiH4 + CH4)/H2 reduced the size of the SiC nanoparticles. When the nanoparticles were small enough, an epitaxial SiC film approximately 100-nm-thick was grown, whereas larger nanoparticles produced polycrystalline SiC films. These results suggest that the size of the CNPs is an important process variable when growing films by means of non-classical crystallization.

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Section: Resultsmentioning

confidence: 85%

Section: Resultsmentioning

confidence: 85%

Effects of the Size of Charged Nanoparticles on the Crystallinity of SiC Films Prepared by Hot Wire Chemical Vapor Deposition

Kim

Kwon

et al. 2020

Coatings

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“…The oxidation could not be prevented in our system, which was attributed to the relatively poor vacuum. If the oxidation can be prevented using a high vacuum system, the poly or nanocrystalline films might have been synthesized, which was revealed in the two-step growth using the hot wire CVD process [21,27,28].…”

Section: Discussionmentioning

confidence: 99%

Two-Step Deposition of Silicon Oxide Films Using the Gas Phase Generation of Nanoparticles in the Chemical Vapor Deposition Process

et al. 2021

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Non-classical crystallization, in which charged nanoparticles (NPs) are the building blocks of film growth, has been extensively studied in chemical vapor deposition (CVD). Here, the deposition behavior of silicon oxide films by the two-step growth process, where NPs are generated in the gas phase at high temperature and deposited as films at low temperature, was studied in the CVD process. Although we supplied SiH4, H2, and N2, the deposited film turned out to be silicon oxide, which is attributed to relatively poor vacuum. Also, silicon oxide NPs were captured on transmission electron microscopy (TEM) carbon membranes of a copper grid for 10 s under various conditions. When the quartz tube with a conical nozzle was used, the size of nanoparticles increased drastically with increasing processing time (or delay time) and porous films with a rough surface were deposited. When the quartz tube without a nozzle was used, however, the size did not increase much with increasing processing time and dense films with a smooth surface were deposited. These results suggest that the size of nanoparticles is an important parameter for the deposition of dense films for two-step growth at low temperatures.

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“…Nonclassical crystallization has been studied extensively by numerous researchers in the field of crystal growth. ,,− Hwang et al − showed that most nanoparticle building blocks generated in the gas-phase synthesis of thin films and nanostructures through chemical vapor deposition (CVD) are electrically charged and that the charges played a critical role in nonclassical crystallization . To emphasize the role of charges in nonclassical crystallization, the authors named the underlying theory the “theory of charged nanoparticles” …”

Section: Introductionmentioning

confidence: 99%

Effects of Electrostatic Interaction on the Formation of a Particle Depletion Zone by Charged Nanoparticles during the Chemical Vapor Deposition of Si Processes

Byun

Yang

Park

et al. 2022

Crystal Growth & Design

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The electrostatic potential energy and surface charge density of charged nanoparticles (CNPs) were calculated via the finite element method (FEM). We combined the FEM results with kinetic Monte Carlo (kMC) simulations to study the dynamics of a nonclassical crystallization system comprising numerous small CNPs and a large CNP. Afterward, we investigated the evolution of a particle depletion zone around the large CNP during the lowtemperature chemical vapor deposition of Si. The FEM calculation results showed that small and large CNPs having like charges attracted each other when they were in close proximity, because opposite charges were induced on the surfaces of particles adjacent to each other. The kMC simulation results showed that this attraction resulted in a relatively small particle depletion zone around the large CNP. During the formation of the depletion zone, charges accumulated on the large CNP. The accumulated charge resulted in repulsion between the small and large CNPs and a gradual expansion of the particle depletion zone. Further analysis indicated that the imbalance between the numbers of positively and negatively charged CNPs influenced the structural evolution of the particle depletion zone.

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Generation of Charged SiC Nanoparticles During HWCVD Process

Cited by 11 publications

References 29 publications

Effects of the Size of Charged Nanoparticles on the Crystallinity of SiC Films Prepared by Hot Wire Chemical Vapor Deposition

Effects of the Size of Charged Nanoparticles on the Crystallinity of SiC Films Prepared by Hot Wire Chemical Vapor Deposition

Two-Step Deposition of Silicon Oxide Films Using the Gas Phase Generation of Nanoparticles in the Chemical Vapor Deposition Process

Effects of Electrostatic Interaction on the Formation of a Particle Depletion Zone by Charged Nanoparticles during the Chemical Vapor Deposition of Si Processes

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