Generation mechanism of dislocations during directional solidification of multicrystalline silicon using artificially designed seed

Takahashi, Isao; Usami, Noritaka; Kutsukake, Kentaro; Stokkan, Gaute; Morishita, Kohei; Nakajima, Kazuo

doi:10.1016/j.jcrysgro.2010.01.011

Cited by 95 publications

(48 citation statements)

References 26 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…[27][28][29][30] We observed the generation and propagation of small-angle grain boundaries related to light elemental impurities. Thus, we assume that there are several origins of the small-angle grain boundaries consisting of dislocations and that they are generated both during and after solidification.…”

Section: -2mentioning

confidence: 99%

Evaluation of defects generation in crystalline silicon ingot grown by cast technique with seed crystal for solar cells

Tachibana

Sameshima

Kojima

et al. 2012

Journal of Applied Physics

View full text Add to dashboard Cite

Although crystalline silicon is widely used as substrate material for solar cell, many defects occur during crystal growth. In this study, the generation of crystalline defects in silicon substrates was evaluated. The distributions of small-angle grain boundaries were observed in substrates sliced parallel to the growth direction. Many precipitates consisting of light elemental impurities and small-angle grain boundaries were confirmed to propagate. The precipitates mainly consisted of Si, C, and N atoms. The small-angle grain boundaries were distributed after the precipitation density increased. Then, precipitates appeared at the small-angle grain boundaries. We consider that the origin of the small-angle grain boundaries was lattice mismatch and/or strain caused by the high-density precipitation. V C 2012 American Institute of Physics. [http://dx

show abstract

Section: -2mentioning

confidence: 99%

Evaluation of defects generation in crystalline silicon ingot grown by cast technique with seed crystal for solar cells

Tachibana

Sameshima

Kojima

et al. 2012

Journal of Applied Physics

View full text Add to dashboard Cite

show abstract

“…Crystalline defects-such as grain boundaries [3] and dislocations [4][5][6][7][8][9][10][11][12][13][14][15][16][17][18][19]-impurities [20,21], and foreign inclusions [22][23][24] in mc-Si wafers degrade the PV performance of mc-Si solar cells. In order to enhance the PV performance of mc-Si solar cells, a lot of effort has been devoted to reducing the number of grain boundaries and the dislocation densities in mc-Si [7,25,26].…”

Section: Introductionmentioning

confidence: 99%

Study of Dislocations in the Minicrystallized Regions in Multicrystalline Silicon Grown by the Directional Solidification Method

et al. 2016

View full text Add to dashboard Cite

Directionally solidified multicrystalline silicon (mc-Si)-based solar cells have dominated the global photovoltaic market in recent years. The photovoltaic performance of mc-Si solar cells is strongly influenced by their crystalline defects. The occurrence of minicrystallization results in much smaller grain size and, therefore, a larger number of grain boundaries in mc-Si ingots. Dislocations in the minicrystallized regions have been rarely investigated in the literature. In this work, optical microscopy was used to investigate dislocations in the mincrystallized regions in mc-Si ingots grown by the directional solidification method. The distribution of dislocations was found to be highly inhomogeneous from one grain to another in the mincrystallized regions. High inhomogeneity of dislocation distribution was also observed in individual grains. Serious shunting behavior was observed in the mc-Si solar cells containing minicrystallized regions, which strongly deteriorates their photovoltaic properties. The shunting was found to be highly localized to the minicrystallized regions.

show abstract

“…Takahashi et al [14] studied the generation mechanism of dislocations at the junction of symmetrically and asymmetrically misoriented seeds. In both cases, a grain boundary was created at the junction and dislocations were generated.…”

Section: Introductionmentioning

confidence: 99%

Mono-like silicon ingots grown on low angle misoriented seeds: Defect characterization by synchrotron X-ray diffraction imaging

et al. 2015

View full text Add to dashboard Cite

Generation mechanism of dislocations during directional solidification of multicrystalline silicon using artificially designed seed

Cited by 95 publications

References 26 publications

Evaluation of defects generation in crystalline silicon ingot grown by cast technique with seed crystal for solar cells

Evaluation of defects generation in crystalline silicon ingot grown by cast technique with seed crystal for solar cells

Study of Dislocations in the Minicrystallized Regions in Multicrystalline Silicon Grown by the Directional Solidification Method

Mono-like silicon ingots grown on low angle misoriented seeds: Defect characterization by synchrotron X-ray diffraction imaging

Contact Info

Product

Resources

About