Generalized dielectric function and the plasmon-phonon coupling in GaAs and CdTe

Perkowitz, Sidney; Thorland, R. H.

doi:10.1016/0038-1098(75)90012-5

Cited by 25 publications

(6 citation statements)

References 6 publications

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“…͑4͒ when ⌫ L ϭ⌫ T . A different form of dielectric function obtained by extending the generalized LST relation to systems containing plasmons [29][30][31][32] …”

Section: A Dielectric Functionsmentioning

confidence: 99%

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Spectroscopic analysis of electrical properties in polar semiconductors with over-damped plasmons

Nakashima

Harima

2004

Journal of Applied Physics

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Raman spectroscopic study of the electrical properties of 6H-SiC crystals grown by hydrogen-assisted physical vapor transport method Raman characterization of local electrical properties and growth process in modulation-doped 6H-SiC crystals J. Appl. Phys. 95, 3547 (2004); 10.1063/1.1655682Raman scattering from LO phonon-plasmon coupled modes and Hall-effect in n-type silicon carbide 4H-SiC Raman and infrared reflection spectroscopies provide us information on electronic properties in polar semiconductors. In the present work, we have employed a dielectric function including the LO phonon damping in addition to the TO phonon damping and free carrier damping, and analyzed observed spectra of n-type 4H-SiC crystals. The carrier density and mobility obtained from the line shape analysis as the best fit parameters are compared with those obtained using the conventional classical dielectric function. It is recognized that the LO phonon damping has a significant effect on the determination of the carrier mobility and density.

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“…͑4͒ when ⌫ L ϭ⌫ T . A different form of dielectric function obtained by extending the generalized LST relation to systems containing plasmons [29][30][31][32] …”

Section: A Dielectric Functionsmentioning

confidence: 99%

“…͑6͒. 31 From the fitting the parameters 1 , 2 , ␥ 1 , ␥ 2 , ␥ p , and ␥ t were determined. However, since there is no theoretical treatment connecting the damping constants ␥ 1 and ␥ 2 to measurable physical quantities, Eq.…”

Section: A Dielectric Functionsmentioning

confidence: 99%

Spectroscopic analysis of electrical properties in polar semiconductors with over-damped plasmons

Nakashima

Harima

2004

Journal of Applied Physics

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“…Method of obtaining carrier concentration and mobility from IR reflectance spectroscopy [11,12] The values of dielectric constants of semiconductors in IR spectral region can be calculated as a function of wavelength or frequency using the dispersion equation. For the analysis of IR reflectance spectra, a number of dielectric function models have been proposed [16][17][18][19][20]. The classical dielectric function (CDF) model [16], which assumes the damping constant of the LO phonon is the same as that of the TO phonon, has been widely used.…”

Section: Characterization Methods Of the Electrical Properties In Sic mentioning

confidence: 99%

“…In the case of heavily doped SiC crystals, the plasma frequency is closed to the phonon frequency and the LO phonon and plasmon are strongly coupled. Therefore, though the MDF mode can approximately estimate the electrical properties of heavily doped SiC wafer, it is necessary to use another dielectric function mode that takes into account the effect of LO phonon-plasmon coupled modes [19,20] to obtain more accurate values.…”

Section: Measurements Of Ir Reflectance Spectra Of Sic Wafers and Estmentioning

confidence: 99%

Nondestructive and Contactless Characterization Method for Spatial Mapping of the Thickness and Electrical Properties in Homo-Epitaxially Grown SiC Epilayers Using Infrared Reflectance Spectroscopy

Yoshida¹,

Hijikata²,

Yaguchi³

2012

Physics and Technology of Silicon Carbide Devices

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“…(25) show, together with equations (18) and (20), that there is a limit in the accuracy with which we can approximate the first and second derivatives. G,(mh) and G,(mh) are proportional to m2, whereas 6,(m7~) and 6,(mh) are proportional to llm and l/rn2, respectively, so we have two contradictory demands in minimizing the errors in the derivatives.…”

Section: Numerical Proceduresmentioning

confidence: 96%

A New Method to Determine the Coupled Mode Parameters of a Plasmon‐Multiphonon System

Gelten

Bosch

1981

Physica Status Solidi (b)

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A new (numerical) method is described to determine all coupled mode parameters of a complex plasmon-phonon system in a semiconductor. First a general theoretical description is given of the complex dielectric function describing such a system. Some practically important relations are deduced. Starting from an experimentally determined reflectivity spectrum, the dielectric function is determined at a number of discrete frequencies by means of Kramers-Kronig analysis. A complete background is given for a numerical method to determine all relevant mode parameters, especially the coordinates of poles and zeros in the complex frequency plane, from this spectrum. Finally the new method is applied to a test spectrum. The results are discussed and compared with those of other methods.

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Generalized dielectric function and the plasmon-phonon coupling in GaAs and CdTe

Cited by 25 publications

References 6 publications

Spectroscopic analysis of electrical properties in polar semiconductors with over-damped plasmons

Spectroscopic analysis of electrical properties in polar semiconductors with over-damped plasmons

Nondestructive and Contactless Characterization Method for Spatial Mapping of the Thickness and Electrical Properties in Homo-Epitaxially Grown SiC Epilayers Using Infrared Reflectance Spectroscopy

A New Method to Determine the Coupled Mode Parameters of a Plasmon‐Multiphonon System

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