Nondestructive and Contactless Characterization Method for Spatial Mapping of the Thickness and Electrical Properties in Homo-Epitaxially Grown SiC Epilayers Using Infrared Reflectance Spectroscopy

Yoshida, Sadafumi; Hijikata, Yasuto; Yaguchi, Hiroyuki

doi:10.5772/50749

Cited by 7 publications

(7 citation statements)

References 36 publications

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“…2). Spectra obtained by Yoshida et al [19] yielded a plasma minimum at concentrations down to $10 15 cm À3 , but these values are not close to the theoretically predicated values of x p .…”

Section: Resultsmentioning

confidence: 72%

“…The plasma resonance frequency is obtained from infrared reflectance spectroscopy, and the procedure is very simple and non-destructive, enabling crystal growers a quick method of obtaining an indication of the level of doping they are achieving. The method has also been applied in the case of bulk and epilayers of SiC [10][11][12][13][14][15][16][17][18][19], as well as irradiated samples [20], with varying degrees of success.…”

Section: Introductionmentioning

confidence: 98%

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Notes on the plasma resonance peak employed to determine doping in SiC

Engelbrecht

Rooyen

Henry

et al. 2015

Infrared Physics & Technology

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h i g h l i g h t sThe article provides a review of past research and information about the plasma resonance in silicon carbide. Attention was given to all parameters involved for the three most common polytypes of SiC. The second plasma resonance was investigated. An explanation for not observing the 2nd plasma minimum in 3C-SiC is provided. a b s t r a c tThe doping level of a semiconductor material can be determined using the plasma resonance frequency to obtain the carrier concentration associated with doping. This paper provides an overview of the procedure for the three most common polytypes of SiC. Results for 3C-SiC are presented and discussed. In phosphorus doped samples analysed, it is submitted that the 2nd plasma resonance cannot be detected due to high values of the free carrier damping constant c.

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Section: Resultsmentioning

confidence: 72%

Section: Introductionmentioning

confidence: 98%

Notes on the plasma resonance peak employed to determine doping in SiC

Engelbrecht

Rooyen

Henry

et al. 2015

Infrared Physics & Technology

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show abstract

“…For this reason, it would be beneficial to follow up this investigation by adapting the approach outlined here to these two other techniques. Further investigation could also go to adapting this method to other semiconductor materials, such as Ge, GaN, GaAs and SiC [15][16][17], which compliment Si in the semiconductor industry.…”

Section: Resultsmentioning

confidence: 99%

A fast approach to measuring the thickness uniformity of a homoepilayer grown on to any type of silicon wafer

Myronov

Colston

Davies

et al. 2022

Semicond. Sci. Technol.

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Optical reflection spectroscopy techniques offer a non-destructive and fast method of measuring the thickness of silicon (Si) epilayers, enabling very fast thickness uniformity mapping across the full surface of epiwafers up to 450 mm in diameter. However, their use for undoped or low doped epilayers has traditionally been constrained by a dependence on high levels of substitutional doping in the Si wafer, at values of approximately 5 × 1019 cm−3. Whilst the high dopant concentration of this wafer creates the necessary reflectance boundary for optical reflection, their commercial availability is mainly limited to the (001) surface orientation only. Optical reflectance techniques are therefore also limited in use to this orientation. In this article, an approach to measure the thickness of a Si epilayer on any Si wafer, independent of its crystallographic orientation, doping type and value, using Fourier transform infrared reflection spectroscopy is proposed and demonstrated. Because the use of non-destructive optical reflection spectroscopy is already common and well-understood within both industry and academia, this technique could easily be implemented within existing industrial and research fabrication facilities. Furthermore, this approach could be adapted, with further work, to suit other semiconductor materials and other optical reflection techniques.

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“…where N is the concentration of free charge carriers with effective mass m * , e is the elementary charge, ε 0 is the vacuum permittivity, c the speed of light in vacuum, n 0 the refractive index of the undoped host material and λ 0 the vacuum wavelength for which we evaluate the refractive index. Increasing the free-carrier concentration N will thus decrease the refractive index for 4H-SiC 24,25 . This should allow for total internal reflection at shallow reflection angles.…”

Section: Tuning the Refractive Index Via Carrier-concentrationmentioning

confidence: 99%

Broadband single-mode planar waveguides in monolithic 4H-SiC

Bosma,

Hendriks,

Ghezellou

et al. 2022

Preprint

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Color-center defects in silicon carbide promise opto-electronic quantum applications in several fields, such as computing, sensing and communication. In order to scale down and combine these functionalities with the existing silicon device platforms, it is crucial to consider SiC integrated optics. In recent years many examples of SiC photonic platforms have been shown, like photonic crystal cavities, film-on-insulator waveguides and micro-ring resonators. However, all these examples rely on separating thin films of SiC from substrate wafers. This introduces significant surface roughness, strain and defects in the material, which greatly affects the homogeneity of the optical properties of color centers. Here we present and test a method for fabricating monolithic single-crystal integrated-photonic devices in SiC: tuning optical properties via charge carrier concentration. We fabricated monolithic SiC n-i-n and p-i-n junctions where the intrinsic layer acts as waveguide core, and demonstrate the waveguide functionality for these samples. The propagation losses are below 14 dB/cm. These waveguide types allow for addressing color-centers over a broad wavelength range with low strain-induced inhomogeneity of the optical-transition frequencies. Furthermore, we expect that our findings open the road to fabricating waveguides and devices based on p-i-n junctions, which will allow for integrated electrostatic and radio frequency (RF) control together with high-intensity optical control of defects in silicon carbide.

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Nondestructive and Contactless Characterization Method for Spatial Mapping of the Thickness and Electrical Properties in Homo-Epitaxially Grown SiC Epilayers Using Infrared Reflectance Spectroscopy

Cited by 7 publications

References 36 publications

Notes on the plasma resonance peak employed to determine doping in SiC

Notes on the plasma resonance peak employed to determine doping in SiC

A fast approach to measuring the thickness uniformity of a homoepilayer grown on to any type of silicon wafer

Broadband single-mode planar waveguides in monolithic 4H-SiC

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