General orientational characteristics of heteroepitaxial layers of AIIBVI semiconductors on sapphire and semiconductor substrates with diamond and sphalerite structures (AIIIBV)

Kuznetsov, G. F.; Aitkhozhin, S. A.

doi:10.1134/1.1481944

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“…For such combinations the epitaxial relationship, i.e. the alignment of the crystallographic directions of both materials, which can have different space groups, has to be considered [378]. Some examples are given in Table 11.1.…”

Section: Heterosubstratesmentioning

confidence: 99%

The Physics of Semiconductors

Grundmann¹

2006

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Section: Heterosubstratesmentioning

confidence: 99%

The Physics of Semiconductors

Grundmann¹

2006

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Occurrence of Rotation Domains in Heteroepitaxy

2010

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Heteroepitaxy can involve materials with a misfit of crystal structure. Rotation domains in the epilayer are a fundamental consequence. We derive a general expression for their (minimum) number which is determined by the mismatch of the rotational symmetries of the substrate and epilayer. In the case of a mismatch of rotational symmetry, the number of rotation domains of material A on material B is different from that of B on A. A larger number of rotation domains can occur due to domain structure or nearly fulfilled additional symmetries of the substrate surface.

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General orientational characteristics of heteroepitaxial layers of AIIBVI semiconductors on sapphire and semiconductor substrates with diamond and sphalerite structures (AIIIBV)

Cited by 2 publications

References 2 publications

The Physics of Semiconductors

The Physics of Semiconductors

Occurrence of Rotation Domains in Heteroepitaxy

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