General approach for anisotropic magnetoresistance calculations used for revealing the role of cobalt nanowire’s geometrical details

Velo, Murilo Ferreira; Santos, Marcos V. Puydinger dos; Cecchi, Breno Malvezzi; Pirota, K. R.

doi:10.1016/j.jmmm.2021.167945

Cited by 2 publications

(2 citation statements)

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“…The mesh size of the 2D system was fixed at 4 × 4 nm 2 , which is lower than the exchange length of cobalt (∼5 nm). 44 The temperature was set as 300 K. The saturation magnetization and exchange stiffness constant A were chosen to be 8.70 × 10 5 A•m −1 and 1.66 × 10 −11 J•m −1 , respectively. The initial magnetization state was set to be a stripe domain structure.…”

Section: Methodsmentioning

confidence: 99%

“…A 2 × 2 μm 2 two-dimensional (2D) system of 12 repetitions of a trilayer stack consisting of Pt (3 nm), Co (1.7 nm), and Ta (2.3 nm) was used with applying the 2D periodic boundary conditions. The mesh size of the 2D system was fixed at 4 × 4 nm 2 , which is lower than the exchange length of cobalt (∼5 nm) . The temperature was set as 300 K. The saturation magnetization and exchange stiffness constant A were chosen to be 8.70 × 10 5 A·m –1 and 1.66 × 10 –11 J·m –1 , respectively.…”

Section: Methodsmentioning

confidence: 99%

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Local Manipulation of Skyrmion Nucleation in Microscale Areas of a Thin Film with Nitrogen-Ion Implantation

Zhao

Wang

et al. 2023

ACS Appl. Mater. Interfaces

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Precise manipulation of skyrmion nucleation in microscale or nanoscale areas of thin films is a critical issue in developing high-efficient skyrmionic memories and logic devices. Presently, the mainstream controlling strategies focus on the application of external stimuli to tailor the intrinsic attributes of charge, spin, and lattice. This work reports effective skyrmion manipulation by controllably modifying the lattice defect through ion implantation, which is potentially compatible with large-scale integrated circuit technology. By implanting an appropriate dose of nitrogen ions into a Pt/Co/Ta multilayer film, the defect density was effectively enhanced to induce an apparent modulation of magnetic anisotropy, consequently boosting the skyrmion nucleation. Furthermore, the local control of skyrmions in microscale areas of the macroscopic film was realized by combining the ion implantation with micromachining technology, demonstrating a potential application in both binary storage and multistate storage. These findings provide a new approach to advancing the functionalization and application of skyrmionic devices.

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Section: Methodsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%