2019 IEEE 16th International Conference on Group IV Photonics (GFP) 2019
DOI: 10.1109/group4.2019.8853918
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Geiger Mode Ge-on-Si Single-Photon Avalanche Diode Detectors

Abstract: Ge-on-Si single-photon avalanche diode (SPAD) detectors have demonstrated a high single-photon detection efficiency of 38% at a wavelength of 1310 nm when operated at a temperature of 125 K. These devices exhibit reduced afterpulsing compared to InGaAs/InP SPADs under nominally identical operating conditions.

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“…The great advantage of SPADs is that their detectors do not need to a trans-conductance amplifier. This intrinsically leads to the fact that optical communications implemented with this kind of diodes can provide high detection, high accuracy and low noise measurements [119][120][121][122][123][124][125][126][127][128][129][130][131][132]. RX sensors based on SPADs still require further in-depth studies.…”
Section: The Receiver (Rx)mentioning
confidence: 99%
“…The great advantage of SPADs is that their detectors do not need to a trans-conductance amplifier. This intrinsically leads to the fact that optical communications implemented with this kind of diodes can provide high detection, high accuracy and low noise measurements [119][120][121][122][123][124][125][126][127][128][129][130][131][132]. RX sensors based on SPADs still require further in-depth studies.…”
Section: The Receiver (Rx)mentioning
confidence: 99%