Gedanken experiment on point defects in unidirectional solidified single crystalline silicon with no dislocations

Chen, X. J.; Nakano, Satoshi; Liu, L. J.; Kakimoto, Koichi

doi:10.1016/j.jcrysgro.2009.10.035

Journal of Crystal Growth

2010

DOI: 10.1016/j.jcrysgro.2009.10.035

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Gedanken experiment on point defects in unidirectional solidified single crystalline silicon with no dislocations

X. J. Chen

Satoshi Nakano

L. J. Liu

et al.

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2011

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“…In order to numerically study the thermal stress in an ingot, we need to get the thermal field in the entire furnace. Kakimoto, et al [9][10][11] developed a 2D transient global model to analyze the temperature and impurity distributions in a casting process. However, when square-shaped crucibles are used, the thermal field in the furnace and the thermal stress in the ingot become 3D.…”

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Numerical simulation of thermal stress distribution in a solidified silicon ingot for solar cells

Sun

Liu

et al. 2011

2011 International Conference on Materials for Renewable Energy &Amp; Environment

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A three-dimensional (3D) thermo-elastic stress model based on the displacement method was developed to study the thermal stress distribution in the solidified silicon ingot in a directional solidification process. The temperature field was obtained from a 3D global simulation of heat transfer in the furnace. A new coupled model was developed to account for the interaction between the silicon ingot and the quartz crucible. The thermal stresses and deformations of the ingot and the crucible were solved simultaneously in a strictly coupled way. The thermal stresses in the square-shaped ingot and crucible were analyzed. The influence of the thermal expansion coefficient of crucible on the thermal stresses in the ingot and crucible was also investigated. The numerical results show that the crucible has important impact on the thermal stress in the silicon ingot. It is necessary to account for the deformation of crucible in the computation model of thermal stress in the silicon ingot. The material property of a crucible also has important effect on the thermal stress in the ingot. A crucible with large thermal expansion coefficient is beneficial to reduce the thermal stress in the silicon ingot.

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mentioning

confidence: 99%

Numerical simulation of thermal stress distribution in a solidified silicon ingot for solar cells

Sun

Liu

et al. 2011

2011 International Conference on Materials for Renewable Energy &Amp; Environment

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Gedanken experiment on point defects in unidirectional solidified single crystalline silicon with no dislocations

Cited by 1 publication

References 15 publications

Numerical simulation of thermal stress distribution in a solidified silicon ingot for solar cells

Numerical simulation of thermal stress distribution in a solidified silicon ingot for solar cells

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