GCPW GaAs Broadside Couplers at H-Band and Application to Balanced Power Amplifiers

Amado-Rey, Ana Belen; Campos-Roca, Y.; Friesicke, Christian; Wagner, Stefan; Ambacher, O.

doi:10.1109/tmtt.2018.2873335

Cited by 7 publications

(11 citation statements)

References 10 publications

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“…The gate lengths vary from 150 nm for K-bands applications, to 100 nm to cover applications up to 100 GHz for pHEMTs, while mHEMT-based PAs with the same gate length are found up to 160 GHz [35]. mHEMTs with gate length of 35 nm allow PA design up to 300 GHz [36].…”

Section: A Iii-v Technologiesmentioning

confidence: 99%

“…There is a technology challenge, however; wafers for mm-wave applications above Ka-band are usually thinned to 50 µm, meaning that width and spacing of Lange fingers must be brought down to a challenging 4 µm to achieve the right ratio between odd-and even-mode impedance in broadband design. Alternatives exist, and broadside coupling can be adopted instead of edge coupling to obtain 3 dB couplers; in III-V technology this might require to use soft dielectric layers to build the spacer between the coupled lines [36]. Normally, a combination between even mode combining and balanced structures is adopted, as depicted in Fig.…”

Section: L1 L2 L3mentioning

confidence: 99%

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A Review of Technologies and Design Techniques of Millimeter-Wave Power Amplifiers

Camarchia

Quaglia

Piacibello

et al. 2020

IEEE Trans. Microwave Theory Techn.

126

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This paper reviews the state-of-the-art of millimeterwave power amplifiers, focussing on broadband design techniques. An overview of the main solid-state technologies is provided, including Si, GaAs, GaN and other III-V materials, and both field-effect and bipolar transistors. The most popular broadband design techniques are introduced, before critically comparing through the most relevant design examples found in the scientific literature. Given the wide breadth of applications that are foreseen to exploit the millimeter-wave (mm-wave) spectrum, this contribution will represent a valuable guide for designers who need a single reference before adventuring in the challenging task of mm-wave power amplifier design. Index Terms-Broadband, millimeter wave, power amplifiers. I. INTRODUCTION T HE millimeter-wave (mm-wave) spectrum is attracting a great interest for applications such as 5G and future satellite communications that go well beyond the traditional niche of military and scientific use in terms of investments and potential revenues. The most attractive feature of mm-waves compared to the RF and microwave band is the huge spectrum availability that gives a great advantage in terms of capacity for telecommunication systems. Other advantages of mm-wave systems are the compact size of circuits, especially antennas, and the intrinsic easiness of frequency reuse thanks to the high free-space attenuations. There are also some advantages that are band-specific; for example, the very high attenuation in the 60 GHz band due to oxygen absorption that enables intrinsically secure communications. On the other hand, the very high frequency of operation poses significant challenges to system and circuit design. Similarly to what happens at lower frequency, one of the most critical circuit components is the power amplifier (PA). Its

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Section: A Iii-v Technologiesmentioning

confidence: 99%

Section: L1 L2 L3mentioning

confidence: 99%

A Review of Technologies and Design Techniques of Millimeter-Wave Power Amplifiers

Camarchia

Quaglia

Piacibello

et al. 2020

IEEE Trans. Microwave Theory Techn.

126

View full text Add to dashboard Cite

show abstract

“…The obtained experimental results are presented for comparison in Table 2 and were compared with similar designs published otherwise. As is seen, the three first directional couplers published in [10][11][12] featured a rather narrow frequency response in terms of power split, in the sense that the characteristics crossed each other in a single frequency point of intersection. Such a response featured large imbalance between the transmission and coupling characteristics.…”

Section: Discussionmentioning

confidence: 99%

“…Bandwidth RL (dB) Isolation (dB) Technology [10] narrow 14 20 GaAs [11] narrow -25 GaAs [12] narrow 27 27 CMOS [14] wide 16 30 GaInP/GaAs [15] wide 15 18 Si/GaAs [16] wide 15 12 GaAs This paper wide 24 20 GaAs Section III B This paper wide 20 28 GaAs Section III C This paper wide 20 25 GaAs Section IV Author Contributions: Conceptualization, S.G. and K.W. ; investigation, R.S.…”

Section: Referencementioning

confidence: 99%

“…Initially, such components were realized in a thick-film technology and interconnected with active devices placed on common supporting dielectric substrate [5]. Presently, it is a common practice to implement directional couplers in high frequency integrated circuits [6][7][8][9][10][11]. One frequently used solutions is to integrate branch-line directional couplers [1,7] and couplers designed with a quasi-lumped element approach due to simplicity of their design and physical realization [2][3][4]6,9,12,13].…”

Section: Introductionmentioning

confidence: 99%

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Realization of High-Performance Broadband Quadrature Directional Couplers in UMS PH25 Technology

2019

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The problem of the realization of broadband quadrature directional couplers in UMS (United Monolithic Semiconductors) PH25 is thoroughly investigated. The limitations of the selected technology are discussed with respect to directional couplers' design. It is shown that, in such technologies, two major problems have to be overcome to achieve the high-performance of the resulting integrated couplers, i.e., the realization of appropriate coupling together with appropriate characteristic impedances, and the equalization of inductive and capacitive coupling coefficients that are inherently different in inhomogeneous dielectric structures. Three different solutions that allow for achieving strong coupling in the selected UMS PH25 process were selected and experimentally investigated, showing the possibility of such circuits' realization. In each of the presented integrated couplers, capacitive compensation techniques were applied for coupling coefficients' equalization.

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A Tetra-Band Microstrip Branch-Line Coupler Using Equivalent Quarter-Wavelength Transmission Lines

Sun

Chen

Han

et al. 2020

2020 IEEE 2nd International Conference on Circuits and Systems (ICCS)

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GCPW GaAs Broadside Couplers at H-Band and Application to Balanced Power Amplifiers

Cited by 7 publications

References 10 publications

A Review of Technologies and Design Techniques of Millimeter-Wave Power Amplifiers

A Review of Technologies and Design Techniques of Millimeter-Wave Power Amplifiers

Realization of High-Performance Broadband Quadrature Directional Couplers in UMS PH25 Technology

A Tetra-Band Microstrip Branch-Line Coupler Using Equivalent Quarter-Wavelength Transmission Lines

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