Gate voltage-dependent Aharanov–Bohm experiment in the presence of Rashba spin–orbit interaction

Nitta, Junsaku; Meijer, F. E.; Narita, Yukihito; Takayanagi, Hideaki

doi:10.1016/s1386-9477(99)00161-7

Cited by 13 publications

(6 citation statements)

References 13 publications

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“…Spintronics, which is the use of electron or hole spin as a new degree of freedom in semiconductor devices, provide new functionality and performance. [1][2][3][4][5] Although many researchers have tried to achieve passive elements such as Datta-Das field effect transistor (FET) for new generation, by the lack of efficiency to electrically inject spin polarized carriers into semiconductor device heterostructures become a one of the obstacles. [6][7][8] We study Datta-Das spin-FET based on InAs-based high electron mobility transistor (HEMT) with ferromagnetic source/drain contact, having large spin orbit interaction.…”

Section: Introductionmentioning

confidence: 99%

Thermal Stability of Pd Gate in Pseudomorphic InGaAs Heterostructures

Ishikura

Cui

Matsuda

et al. 2011

Jpn. J. Appl. Phys.

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The characterization of InAs is known to have high spin–orbit interaction as well as high electron velocity, high sheet carrier density. In order to realize Datta–Das type spin field effect transistor (FET), it becomes crucial to develop thermally stable Schottky gate metal process for achieving a non-alloyed ohmic contact with ferromagnetic electrode after gate formation process. We have investigated Pd-gate deposited on In0.81Ga0.19As-based pseudomorphic heterostructures structure in order to check Pd as a good candidate for thermally stable Schottky gate by verifying good Schottky characteristics while maintaining good transport properties during heat treatment. Characteristics of Pd gate on InAlAs barrier layer was found to have Schottky barrier height of around 0.68 and less than 1.10 of ideality factor. Moreover Pd gate was found to endure higher heat treatment than Ti/Pt/Au gate or Ti/Au gate.

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Section: Introductionmentioning

confidence: 99%

Thermal Stability of Pd Gate in Pseudomorphic InGaAs Heterostructures

Ishikura

Cui

Matsuda

et al. 2011

Jpn. J. Appl. Phys.

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“…Because the BSCs originate from the points of threefold degeneracy in closed ring with account of the Zeeman term we also considered the variation of the geometric phase encir cling the BSC point in the parametric space of flux γ and RSOI strength β. Following [14] we introduce the winding angle α γ γ α β β α = + = + r r cos , sin BSC BSC (25) with the other parameters = k k BSC and ν = 0.2 tuned to the BSC point. Let us take BSC 1 in accordance to table 1.…”

Section: The Effect Of the Zeeman Termmentioning

confidence: 99%

“…Since the strength of the RSOI can be tuned with external gate voltages [24], quantum rings or systems of them have possible spintronic applications. Aharonov-Bohm oscillations in the presence of SOI were observed in [25,26] and systematic analysis of the conductance and polarization of transport electrons through the twodimensional rings with the RSOI was presented by Nowak et al [27]. The electron transfer through quantum rings involves both the spin precession due to the RSOI and the quantum interference effects related to Aharonov-Bohm and Aharonov-Casher (AC) effects [28,29].…”

Section: Introductionmentioning

confidence: 99%

Spin polarized bound states in the continuum in open Aharonov–Bohm rings with the Rashba spin–orbit interaction

Bulgakov

Sadreev

2016

J. Phys.: Condens. Matter

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We consider the trapping of electrons with a definite spin polarization by bound states in the continuum (BSC) in the open Aharonov-Bohm rings in the presence of the Rashba spin-orbit interaction (RSOI). Neglecting the Zeeman term we show the existence of BSCs in the one-dimensional ring when the eigenstates of the closed ring are doubly degenerate. With account of the Zeeman term BSCs occur only at the points of threefold degeneracy. The BSCs are found in the parametric space of flux and RSOI strength in close pairs with opposite spin polarization. Thereby the spin polarization of electrons transmitted through the ring can be altered by minor variation of magnetic or electric field at the vicinity of these pairs. Numerical simulations of the two-dimensional open ring show similar results for the BSCs. Encircling the BSC points in the parametric space of the flux and the RSOI constant gives rise to a geometric phase.

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“…If the magnetization of the source and drain are independently controlled using techniques developed for magnetic memory, such a device offers nonvolatile and reprogrammable operation with spin or magnetization as a virtual fourth terminal. This and other device concepts, including spin-dependent resonant tunnelling diodes (spin-RTDs) [8][9][10][11][12][13][14][15][16][17], gated spin coherent devices [18,19], spin polarized light emitting diodes (spin-LEDs) [20] and tunnel magnetoresistive devices [21][22][23] have stimulated tremendous interest in this rapidly growing field.…”

Section: Introductionmentioning

confidence: 99%

100% spin accumulation in non-half-metallic ferromagnet–semiconductor junctions

Petukhov¹,

Niggemann²,

Smelyanskiy³

et al. 2007

J. Phys.: Condens. Matter

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We show that the spin polarization of electron density in non-magnetic degenerate semiconductors can achieve 100%. The effect of 100% spin accumulation does not require a half-metallic ferromagnetic contact and can be realized in ferromagnet-semiconductor FM-n(+)-n junctions even at moderate spin selectivity of the FM-n(+) contact when the electrons with spin 'up' are extracted from n semiconductor through the heavily doped n(+) layer into the ferromagnet and the electrons with spin 'down' are accumulated near the n(+)-n interface. We derived a general equation relating spin polarization of the current to that of the electron density in non-magnetic semiconductors. We found that the effect of complete spin polarization is achieved near the n(+)-n interface when the concentration of the spin 'up' electrons tends to zero in this region while the diffusion current of these electrons remains finite.

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Gate voltage-dependent Aharanov–Bohm experiment in the presence of Rashba spin–orbit interaction

Cited by 13 publications

References 13 publications

Thermal Stability of Pd Gate in Pseudomorphic InGaAs Heterostructures

Thermal Stability of Pd Gate in Pseudomorphic InGaAs Heterostructures

Spin polarized bound states in the continuum in open Aharonov–Bohm rings with the Rashba spin–orbit interaction

100% spin accumulation in non-half-metallic ferromagnet–semiconductor junctions

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